Prosecution Insights
Last updated: April 19, 2026
Application No. 18/471,933

IMAGE DISPLAY DEVICE AND METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE

Non-Final OA §102§103
Filed
Sep 21, 2023
Examiner
LIU, BENJAMIN T
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Nichia Corporation
OA Round
1 (Non-Final)
74%
Grant Probability
Favorable
1-2
OA Rounds
3y 1m
To Grant
87%
With Interview

Examiner Intelligence

Grants 74% — above average
74%
Career Allow Rate
511 granted / 687 resolved
+6.4% vs TC avg
Moderate +13% lift
Without
With
+12.6%
Interview Lift
resolved cases with interview
Typical timeline
3y 1m
Avg Prosecution
48 currently pending
Career history
735
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
56.9%
+16.9% vs TC avg
§102
32.8%
-7.2% vs TC avg
§112
9.2%
-30.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 687 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-5 and 9-12 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Hiraga et al. (WO 2019168187) (“Hiraga”). With regard to claim 1, figs. 27-31 of Hiraga discloses a method for manufacturing an image display device, the method comprising: forming, on a substrate 1006, a layer 1002 comprising a first part made of a single-crystal (“first buffer layer 1002 is a single crystal”, par [0032]) metal (“metal”, par [0033]); forming a semiconductor layer (1003a, 1003b, 1003c) on the first part 1007, the semiconductor layer (1003a, 1003b, 1003c) comprising a light-emitting layer 1003b; forming a light-emitting element (1003a, 1003b, 1003c) by patterning the semiconductor layer (1003a, 1003b, 1003c), the light-emitting element (1003a, 1003b, 1003c) comprising: a light-emitting surface (bottom of 1003a, fig. 28) on the first part 1003a, and an upper surface at a side (top of 1003c) opposite to the light-emitting surface (bottom 1003a); forming a first insulating film 1025 that covers the substrate 1006, the layer 1002 that comprises the first part 1002, and the light-emitting element (1003a, 1003b, 1003c); forming a circuit element (1020, 1022) on the first insulating film 1025; forming a light-shielding member 1004 between the circuit element (1020, 1022) and the light-emitting element (1003a, 1003b, 1003c); forming a second insulating film 1026 covering the first insulating film 1025 and the circuit element (1020, 1022); forming a first via (vertical portion of 1024 touching 1004) extending through the first 1025 and second insulating films 1026; forming a wiring layer (horizontal portion of 1024) on the second insulating film 1026; removing (“peeling the non-oriented substrate 1006”, par [0132]) the substrate 1006; and removing (“peeling”, par [0132]) at least a portion of the first part (“first buffer layer 1002”, par [0132]) on the light-emitting surface (bottom of 1003a), wherein: the first via 1024 is located between the wiring layer (horizontal portion of 1024) and the upper surface (top of 1003c) and electrically connecting 1024 the wiring layer (horizontal portion of 1024) and the upper surface (top of 1003c). With regard to claim 2, figs. 27-31 of Hiraga discloses that the forming of the layer 1002 including the first part 1002 includes: forming a metal layer 1002 on the substrate 1006; and forming the first part 1002 by performing annealing treatment (“annealing”, par [0119]) of the metal layer 1002, an outer perimeter of the light-emitting element (1003a, 1003b, 1003c) is located within an outer perimeter of the first part 1002 when viewed in plan. With regard to claim 3, figs. 27-31 of Hiraga discloses that the forming of the layer that includes the first part 1002 comprises, before the annealing treatment (“annealing”, par [0119]) of the metal layer 1002, patterning the metal layer 1002. With regard to claim 4, figs. 27-31 of Hiraga discloses that the forming of the light-shielding member 1004 comprises forming a light-shielding electrode 1004 on the upper surface (top of 1003c), and the first via (vertical portion of 1024 touching 1004) is electrically connected to the upper surface (top of 1003c) via the light-shielding electrode 1004. With regard to claim 5, figs. 27-31 of Hiraga discloses that the forming of the light-shielding member 1004 comprises forming a light-shielding layer 1004 on the first insulating film 1005 before the forming of the circuit element (1020, 1022). With regard to claim 9, figs. 27-31 of Hiraga discloses that the semiconductor layer 1003 comprises a gallium nitride (“GaN”, par [0134]) compound semiconductor. With regard to claim 10, figs. 27-31 of Hiraga discloses after the removing of the substrate (“peeling the non-oriented substrate 1006”, par [0132]), forming a wavelength conversion member 1008C on the light-emitting surface (bottom of 1003a). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim 6 is rejected under 35 U.S.C. 103 as being unpatentable over Hiraga et al. (WO 2019168187) (“Hiraga”) in view of Takeya et al. (US 2019/0229097) (“Takeya”). With regard to claim 6, Hiraga does not disclose forming a second via extending through the first and second insulating films, wherein: the light-emitting element comprises a first connection part located along the light-emitting surface, the second via is located between the wiring layer and the first connection part and electrically connects the wiring layer and the first connection part. However, fig. 2 of Takeya discloses forming a second via 170 extending through the first (bottom part of 163) and second insulating films (top part of 163), wherein: the light-emitting element (157, 155, 153) comprises a first connection part 159b located along the light-emitting surface 153, the second via 170 is located between the wiring layer 171d and the first connection part 159p and electrically connects the wiring layer 171d and the first connection part 159p. Therefore, it would have been obvious to one of ordinary skill in the art to form the LED of Hiraga with the first electrode as taught in Takeya in order to provide both electrical connections to the LED on one side of the LED. See par [0127]) of Takeya. Claim 7 is rejected under 35 U.S.C. 103 as being unpatentable over Hiraga et al. (WO 2019168187) (“Hiraga”) in view of Kong et al. (US 2021/0091279) (“Kong”). With regard to claim 7, Hiraga does not disclose after removing the at least a portion of the first part on the light-emitting surface, roughening the exposed light-emitting surface. However, fig. 19 of Kong discloses that after removing (“substrate 100 may be removed”, par [0174]) the at least a portion of the first part on the light-emitting surface, roughening 700 the exposed light-emitting surface. Therefore, it would have been obvious to one of ordinary skill in the art to form the back of the Led of Hiraga with the extraction pattern as taught in Kong in order to increase the emission efficiency of the light emitted from the light emitting device. See par [0179] of Kong. Allowable Subject Matter Claim 8 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BENJAMIN T LIU whose telephone number is (571)272-6009. The examiner can normally be reached Monday-Friday 11:00am-7:30pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J Green can be reached at 571 270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /BENJAMIN TZU-HUNG LIU/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Sep 21, 2023
Application Filed
Dec 26, 2025
Non-Final Rejection — §102, §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
74%
Grant Probability
87%
With Interview (+12.6%)
3y 1m
Median Time to Grant
Low
PTA Risk
Based on 687 resolved cases by this examiner. Grant probability derived from career allow rate.

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