Prosecution Insights
Last updated: April 19, 2026
Application No. 18/484,300

APPARATUSES INCLUDING CAPACITORS INCLUDING MULTIPLE DIELECTRIC MATERIALS

Final Rejection §103
Filed
Oct 10, 2023
Examiner
BEGUM, SULTANA
Art Unit
2824
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Lodestar Licensing Group LLC
OA Round
2 (Final)
93%
Grant Probability
Favorable
3-4
OA Rounds
1y 11m
To Grant
94%
With Interview

Examiner Intelligence

Grants 93% — above average
93%
Career Allow Rate
486 granted / 522 resolved
+25.1% vs TC avg
Minimal +0% lift
Without
With
+0.4%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 11m
Avg Prosecution
32 currently pending
Career history
554
Total Applications
across all art units

Statute-Specific Performance

§101
2.0%
-38.0% vs TC avg
§103
51.1%
+11.1% vs TC avg
§102
16.9%
-23.1% vs TC avg
§112
17.6%
-22.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 522 resolved cases

Office Action

§103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Status of claim(s) to be treated in this office action: a. Independent: 1 b. Pending: 1-7 Per MPEP 2111 and 2111.01, the claims are given their broadest reasonable interpretation and the words of the claims are given their plain meaning consistent with the specification without importing claim limitations from the specification. Election/Restrictions Previously withdrawn and currently amended claim set 8-20 are directed to an invention that is independent or distinct from the invention originally claimed for the following reasons: Independent claim 8 recites “lower surfaces of the conductive material of the gate structures directly abutting and physically contacting upper surfaces of the semiconductive material and the isolation structures”; and Independent claim 14 recites “semiconductive material of the gate structures directly vertically intervening between the conductive material and the dielectric material”. These two independent claims are distinct and require additional searches. Since applicant has received an action on the merits for the originally presented invention, this invention has been constructively elected by original presentation for prosecution on the merits. Accordingly, claims 8-20 withdrawn from consideration as being directed to a non-elected invention. See 37 CFR 1.142(b) and MPEP § 821.03. To preserve a right to petition, the reply to this action must distinctly and specifically point out supposed errors in the restriction requirement. Otherwise, the election shall be treated as a final election without traverse. Traversal must be timely. Failure to timely traverse the requirement will result in the loss of right to petition under 37 CFR 1.144. If claims are subsequently added, applicant must indicate which of the subsequently added claims are readable upon the elected invention. Should applicant traverse on the ground that the inventions are not patentably distinct, applicant should submit evidence or identify such evidence now of record showing the inventions to be obvious variants or clearly admit on the record that this is the case. In either instance, if the examiner finds one of the inventions unpatentable over the prior art, the evidence or admission may be used in a rejection under 35 U.S.C. 103 or pre-AIA 35 U.S.C. 103(a) of the other invention. Information Disclosure Statement The information disclosure statement (IDS) is submitted on 12/4/2025. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Terminal Disclaimer The terminal disclaimer filed on 12/30/2025 disclaiming the terminal portion of any patent granted on this application which would extend beyond the expiration date of U.S. Patent No. 11799038 has been reviewed and is accepted. The terminal disclaimer has been recorded. Allowable Subject Matter Claims 1-7 are allowed. Conclusion Applicant's submission of an information disclosure statement under 37 CFR 1.97(c) with the timing fee set forth in 37 CFR 1.17(p) on 12/4/2025 prompted the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 609.04(b). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. The prior art made of record and not relied upon is considered pertinent to applicant's disclosure: Kim (US 20130175590) --- IDS Regarding independent claim 1, Kim discloses an apparatus (Figs. 1-2), comprising: capacitors comprising active regions (Figs. 1-2 and [0087] describes an active region 110); multiple dielectric materials overlying the capacitors, adjacent portions of the multiple dielectric materials exhibiting thicknesses that differ from one another (Figs. 1-2 and [0086] describes a first insulating film 132, a second insulating film 130. Fig. 2 shows that the thicknesses are different); isolation regions laterally separating adjacent capacitors (Figs. 1-2, 6 and [0086] describes capacitor 4, defined by an element isolation region 118); and gate regions overlying the capacitors (Figs. 1-2 and [0086] shows gate region 120) and comprising: semiconductive material overlying and physically contacting upper surfaces of the multiple dielectric materials; and conductive material overlying and physically contacting upper surfaces of the semiconductive material and the isolation regions (Figs. 1-2 and [0086] shows gate region 120 is a conductive layer). Kim lacks semiconductive material overlying and physically contacting upper surfaces of the multiple dielectric materials; and conductive material overlying and physically contacting upper surfaces of the semiconductive material and the isolation regions. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SULTANA BEGUM whose telephone number is (571)431-0691. The examiner can normally be reached M-F 8 am - 5 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard Elms can be reached at 571272 1869. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SULTANA BEGUM/Primary Examiner, Art Unit 2824 3/13/2026
Read full office action

Prosecution Timeline

Oct 10, 2023
Application Filed
Sep 29, 2025
Non-Final Rejection — §103
Dec 30, 2025
Response Filed
Mar 13, 2026
Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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2y 5m to grant Granted Apr 07, 2026
Patent 12592276
SEMICONDUCTOR MEMORY DEVICE WITH SENSE AMPLIFIER THAT OPERATES FOR TWO DIFFERENT VOLTAGE RANGE AND WRITING METHOD THEREOF
2y 5m to grant Granted Mar 31, 2026
Patent 12592272
MEMORY DEVICE HAVING NON-UNIFORM REFRESH
2y 5m to grant Granted Mar 31, 2026
Patent 12580008
POWER GATING CIRCUIT WITH MEMORY PRECHARGE SUPPORT
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
93%
Grant Probability
94%
With Interview (+0.4%)
1y 11m
Median Time to Grant
Moderate
PTA Risk
Based on 522 resolved cases by this examiner. Grant probability derived from career allow rate.

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