Prosecution Insights
Last updated: May 29, 2026
Application No. 18/489,844

3D MEMORY CELLS AND ARRAY STRUCTURES

Non-Final OA §102
Filed
Oct 18, 2023
Priority
Oct 19, 2022 — provisional 63/417,535 +12 more
Examiner
LUKE, DANIEL M
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Neo Semiconductor Inc.
OA Round
1 (Non-Final)
71%
Grant Probability
Favorable
1-2
OA Rounds
2m
Est. Remaining
90%
With Interview

Examiner Intelligence

Grants 71% — above average
71%
Career Allowance Rate
487 granted / 688 resolved
+2.8% vs TC avg
Strong +20% interview lift
Without
With
+19.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 9m
Avg Prosecution
19 currently pending
Career history
719
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
81.1%
+41.1% vs TC avg
§102
10.5%
-29.5% vs TC avg
§112
7.3%
-32.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 688 resolved cases

Office Action

§102
DETAILED ACTION This office action is in response to the application filed 10/18/2023. Currently, claims 1-3 are pending. Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The following title is suggested: 3D MEMORY CELLS AND ARRAY STRUCTURES WITH CONDUCTOR CORES. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1 and 2 are rejected under 35 U.S.C. 102(a)(1) as being clearly anticipated by Ishihara et al. (US 8,455,941). Pertaining to claim 1, Ishihara shows, with reference to FIG. 5A-B, a 3D memory cell structure, comprising: a vertical conductor core (PBG); an insulator (49) surrounding the vertical conductor core; a semiconductor layer (SP) surrounding the insulator; charge trapping layers (42, 48, 43) surrounding the semiconductor layer; and a word line layer (61) surrounding at least a portion of the charge trapping layers. Pertaining to claim 2, Ishihara shows the charge trapping layers comprise oxide-nitride-oxide (ONO) layers (col. 11, lines 43-57). Allowable Subject Matter Claim 3 is allowed. The following is a statement of reasons for the indication of allowable subject matter: While not nearly as common as 3D memory structures having a vertical insulating core, 3D memory structures having a vertical conductor core are known in the art, as disclosed by Ishihara, for example. However, the prior art does not teach or suggest a 3D memory string comprising a bit line and first and second sub-strings, each sub-string having a conductor core and a drain select gate that controls when voltage on the bit line is applied to the respective sub-string, and wherein a landing pad connects the conductor cores of the first and second sub-strings. Thus, claim 3 is found to be allowable. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Yamazaki discloses a 3D memory structure having a vertical conductor core. Any inquiry concerning this communication or earlier communications from the examiner should be directed to DANIEL M LUKE whose telephone number is (571)270-1569. The examiner can normally be reached Monday-Friday, 9am-5pm, EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Kraig can be reached at (571) 272-8660. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DANIEL LUKE/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Oct 18, 2023
Application Filed
Jan 20, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

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3y 2m to grant Granted Apr 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
71%
Grant Probability
90%
With Interview (+19.7%)
2y 9m (~2m remaining)
Median Time to Grant
Low
PTA Risk
Based on 688 resolved cases by this examiner. Grant probability derived from career allowance rate.

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