Office Action Predictor
Last updated: April 15, 2026
Application No. 18/494,812

Active Microelectronic Assembly Containing A Decoupling Capacitor

Non-Final OA §103
Filed
Oct 26, 2023
Examiner
FERNANDES, ERROL V
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Kyocera Avx Components Corporation
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
2y 1m
To Grant
89%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allow Rate
667 granted / 786 resolved
+16.9% vs TC avg
Minimal +4% lift
Without
With
+4.0%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
28 currently pending
Career history
814
Total Applications
across all art units

Statute-Specific Performance

§103
58.6%
+18.6% vs TC avg
§102
36.8%
-3.2% vs TC avg
§112
4.1%
-35.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 786 resolved cases

Office Action

§103
DETAILED ACTION Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-33 is/are rejected under 35 U.S.C. 103 as being unpatentable over Lin et al. US 2024/0071999 A1 in view of Chakravorty US 6,970,362 B1. Regarding claims 1-28 and 30-33, Lin discloses: A microelectronic assembly (Fig. 1) comprising: a semiconductor structure (C1, C2, C3); an active interposer (RDL1, E1, RDL2, I1, I2, TDV) that is electrically connected to the semiconductor structure (thru RDL1) and contains an insulating material (E1) within which an electronic component (I1, I2) is embedded; a decoupling capacitor (para 0033; IPD) electrically connected to the interposer; and a circuit board (200). Lin does not disclose: a decoupling capacitor having a first surface and an opposing second surface, wherein the decoupling capacitor contains alternating dielectric layers and internal electrode layers, the internal electrode layers containing first internal electrode layers and second internal electrode layers, wherein the capacitor further contains a first external terminal that is electrically connected to the first internal electrode layers and disposed on a the first surface of the capacitor, a second external terminal that is electrically connected to the first internal electrode layers and disposed on the second surface of the capacitor, a third external terminal that is electrically connected to the second internal electrode layers and disposed on the first surface of the capacitor, and a fourth external terminal that is electrically connected to the second internal electrode layers and disposed on the second surface of the capacitor, wherein the first external terminal and the third external terminal are electrically connected to the interposer; and a circuit board, wherein the second external terminal and the fourth external terminal of the decoupling capacitor are electrically connected to the circuit board. Chakravorty discloses a patent from a similar field of endeavor in which: a decoupling capacitor (Fig. 2; 55) having a first surface (top) and an opposing second surface (opposite), wherein the decoupling capacitor contains alternating dielectric layers (53) and internal electrode layers (52/54), the internal electrode layers containing first internal electrode layers (52) and second internal electrode layers (54), wherein the capacitor further contains a first external terminal (42/44 connected to 48 and then 52) that is electrically connected to the first internal electrode layers and disposed on a the first surface of the capacitor, a second external terminal (56/58 connected to 48 and the 52) that is electrically connected to the first internal electrode layers and disposed on the second surface of the capacitor, a third external terminal (42/44 connected to 49 and then 54) that is electrically connected to the second internal electrode layers and disposed on the first surface of the capacitor, and a fourth external terminal (56/58 connected to 49 and then 54) that is electrically connected to the second internal electrode layers and disposed on the second surface of the capacitor, wherein the first external terminal and the third external terminal are electrically connected to an overlying die (40); and a circuit board (60), wherein the second external terminal and the fourth external terminal of the decoupling capacitor are electrically connected to the circuit board (Fig. 2). It would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to employ the decoupling capacitor of Chakravorty as the IPD structure in Lin’s reference such that the first and third terminals of the decoupling capacitor are electrically connected the interposer and the second and fourth terminals are electrically connected to the circuit board. Such in inclusion would allow a reduction in switching noise in high-speed integrated circuits that may be accommodated in the microelectronic assembly. (claims 2-6) Lin; para 0025. (claim 7) Lin; one or more coupling components (B1). (claim 8) Lin; one or more conductive pathways (TDVs). (claim 9) Lin; para 0018. (claims 10-12) Lin; para 0015. (claims 13-14) Lin; a package substrate (RDL; para 0013). (claim 15) Chakravorty; a positive polarity (Vcc) and a negative polarity (Vss). (claims 16-18) Chakravorty; 42/44 and 56/58. (claims 19-21) Chakravorty; Fig. 2., col 4 line 61 to col 5 line 9. (claims 22-23) Chakravorty; first internal electrode layers contain lead tabs (48); second internal electrode layers contain lead tabs (49). (claims 24-25) Chakravorty; Fig. 2, 48 and 49. (claims 26-27) Chakravorty; col 4 line 4-14. (claim 28) Chakravorty; Fig. 2, 44 and 56. (claims 30-31) Chakravorty; Fig. 2, B2. (claims 32) Chakravorty; Fig. 2, 42, 44 electrically connected to Lin; RDL2. (claims 33) Chakravorty; Fig. 2, 56, 58 electrically connected to 60. Regarding claim 29, the examiner does not give patentable weight in regards to the claim limitation stating that “wherein the plated layer is formed by a process that includes electroless plating, electrolytic plating, or a combination thereof” since such a limitation is taken to be a product-by-process limitation and is considered nonlimiting. A product by process claim is directed to the product per se, no matter how actually made. See In re Fessman, 180 USPQ 324, 326 (CCPA 1974); In re Marosi et al, 218 USPQ 289, 292 (Fed. Cir. 1983); and particularly In re Thorpe, 227 USPQ 964, 966 (Fed. Cir. 1985), all of which make it clear that it is the patentability of the final structure of the product “gleaned" from the process steps, which must be determined in a “product by process” claim, and not the patentability of the process. See also MPEP 2113. Moreover, an old or obvious product produced by a new method is not a patentable product, whether claimed in “product by process” claims or not. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ERROL V FERNANDES whose telephone number is (571)270-7433. The examiner can normally be reached on 9-5:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Britt Hanley can be reached on 571-270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ERROL V FERNANDES/Primary Examiner, AU 2893
Read full office action

Prosecution Timeline

Oct 26, 2023
Application Filed
May 12, 2025
Response after Non-Final Action
Jan 10, 2026
Non-Final Rejection — §103
Apr 03, 2026
Response Filed

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12599043
SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12593738
FLIP CHIP PACKAGE FOR SEMICONDUCTOR DEVICES
2y 5m to grant Granted Mar 31, 2026
Patent 12588470
GLASS CARRIER STACKED PACKAGE ASSEMBLY METHOD
2y 5m to grant Granted Mar 24, 2026
Patent 12588554
Semiconductor Device and Method Forming Same
2y 5m to grant Granted Mar 24, 2026
Patent 12581806
DISPLAY PANEL AND PREPARATION METHOD OF DISPLAY PANEL
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
89%
With Interview (+4.0%)
2y 1m
Median Time to Grant
Low
PTA Risk
Based on 786 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in for Full Analysis

Enter your email to receive a magic link. No password needed.

Free tier: 3 strategy analyses per month