Prosecution Insights
Last updated: July 17, 2026
Application No. 18/496,562

SEMICONDUCTOR DEVICE ASSEMBLY WITH A THERMALLY-CONDUCTIVE CHANNEL

Non-Final OA §102§103
Filed
Oct 27, 2023
Priority
Nov 02, 2022 — provisional 63/382,007
Examiner
HAN, JONATHAN
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Micron Technology Inc.
OA Round
1 (Non-Final)
84%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
93%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allowance Rate
1060 granted / 1268 resolved
+15.6% vs TC avg
Moderate +10% lift
Without
With
+9.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
21 currently pending
Career history
1297
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
81.2%
+41.2% vs TC avg
§102
14.2%
-25.8% vs TC avg
§112
1.3%
-38.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1268 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Claims 22-25 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 02/02/2026. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-4 and 7-11 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Braunisch et al. (U.S. Publication No. 2008/0150125 A1; hereinafter Braunisch) With respect to claim 1, Braunisch discloses a semiconductor device assembly, comprising: a substrate [104] having a bore [120] that extends through the substrate; a semiconductor die [102,108] disposed on the substrate; and a thermally-conductive channel [114] extending through the bore, the thermally-conductive channel having a first end located at a same side of the substrate as the semiconductor die, and a second end located at an opposite side of the substrate from the semiconductor die (See Figure 2). With respect to claim 2, Braunisch discloses wherein the thermally-conductive channel comprises copper (see ¶[0017]). With respect to claim 3, Braunisch discloses wherein the semiconductor device assembly is in a board-on-chip configuration (see Figure 2). With respect to claim 4, Braunisch discloses wherein the first end of the thermally-conductive channel contacts the semiconductor die (See Figure 2). With respect to claim 7, Braunisch discloses wherein the thermally-conductive channel includes a narrower portion and a wider portion (See Figure 5C). With respect to claim 8, Braunisch discloses wherein the thermally-conductive channel is aligned with an area of the semiconductor die that is associated with a higher operating temperature than an operating temperature of another area of the semiconductor die (see ¶[0033]). With respect to claim 9, Braunisch discloses an additional thermally-conductive channel extending through the bore (see Figure 2). With respect to claim 10, Braunisch discloses a casing [118] surrounding the semiconductor die (see Figure 6; casing also constructed utilizing [106] and [102]). With respect to claim 11, Braunisch discloses a die attach film between the semiconductor die and the substrate (see Figure 2; die is connected via [106] which rests on die attach film). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 12-20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Braunisch in view of Lee et al. (U.S. Patent No. 9,196,575 B1; hereinafter Lee) With respect to claim 12, Braunisch discloses an apparatus, comprising: and a semiconductor device assembly, comprising: a substrate [104] having a bore [120] that extends through the substrate, a semiconductor die [102,108] disposed on the substrate; and a thermally-conductive channel [114], extending through the bore, between the semiconductor die and the circuit board (See Figure 2). Braunisch fails to disclose a circuit board; wherein the substrate is electrically connected to the circuit board, wherein the thermally-conductive channel is configured to transfer heat from the semiconductor die to the circuit board. In the same field of endeavor, Lee teaches a circuit board [305]; wherein the substrate [102] is electrically connected to the circuit board, wherein the thermally-conductive channel [401] is configured to transfer heat from the semiconductor die to the circuit board (see Lee Figure 2A; Column 3, lines 30-35). Implementation of a circuit board as taught by Lee allows for connection of the device of Braunisch to exterior devices and heat dissipation from semiconductor die structures within the device (see Lee Column 3, lines 30-35). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention. With respect to claim 13, the combination of Braunisch and Lee discloses wherein the semiconductor device assembly is in a board-on-chip configuration (see Braunisch Figure 2). With respect to claim 14, the combination of Braunisch and Lee discloses wherein the substrate is electrically connected to the circuit board via a ball grid array [103] (see Lee Figure 2A). With respect to claim 15, the combination of Braunisch and Lee discloses wherein the thermally-conductive channel contacts the semiconductor die (See Braunisch Figure 2). With respect to claim 16, the combination of Braunisch and Lee discloses a thermal interface material disposed on the circuit board, wherein the thermally-conductive channel contacts the thermal interface material (see Lee Column 4, lines 9-15). With respect to claim 17, the combination of Braunisch and Lee discloses wherein the thermally-conductive channel includes a narrower portion and a wider portion, and wherein the wider portion has a thermal connection to the circuit board (See Braunisch Figure 5C and Lee Figure 2A). With respect to claim 18, the combination of Braunisch and Lee discloses wherein the thermally-conductive channel has a thermal connection to a via [316] in the circuit board (see Lee Figure 2A). With respect to claim 19, the combination of Braunisch and Lee discloses an additional thermally-conductive channel, extending through the bore, between the semiconductor die and the circuit board, wherein the additional thermally-conductive channel is configured to transfer heat from the semiconductor die to the circuit board (see Braunisch Figure 2 and Lee Figure 2A). With respect to claim 20, the combination of Braunisch and Lee discloses wherein a thermal connection of the thermally-conductive channel to the circuit board is at a gap between a first row of electrical contacts of the circuit board and a second row of electrical contacts of the circuit board (see Lee Figure 2A) Claim(s) 5-6 is/are rejected under 35 U.S.C. 103 as being unpatentable over Braunisch in view of Khan et al. (U.S. Publication No. 2006/0065972 A1; hereinafter Khan). With respect to claim 5, Braunisch fails to disclose an encapsulant extending through the bore, wherein the thermally-conductive channel extends through the encapsulant but does disclose isolating sidewalls [124] (see Figure 5C). In the same field of endeavor, Khan teaches an encapsulant [310] extending through the bore, wherein the thermally-conductive channel [320] extends through the encapsulant (see Figure 3). Implementation of an encapsulant surrounding the thermally-conductive channel as taught by Khan allows for physical and conductive isolation from surrounding device layers (see Figure 3). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention. With respect to claim 6, the combination of Braunisch and Khan discloses a wire bond [308] from a bottom of the semiconductor die [302] to a bottom of the substrate [314], wherein the encapsulant encapsulates the wire bond (See Khan Figure 3). Claim(s) 21 is/are rejected under 35 U.S.C. 103 as being unpatentable over Braunisch in view of Lee as applied to claim 12 above, and further in view of Khan. With respect to claim 21, the combination of Braunisch and Lee fails to disclose an encapsulant extending through the bore, wherein the thermally-conductive channel extends through the encapsulant. In the same field of endeavor, Khan teaches an encapsulant [310] extending through the bore, wherein the thermally-conductive channel [320] extends through the encapsulant (see Figure 3). Implementation of an encapsulant surrounding the thermally-conductive channel as taught by Khan allows for physical and conductive isolation from surrounding device layers (see Figure 3). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Refai-Ahmed et al. (U.S. Publication No. 2012/0075807 A1) discloses a semiconductor chip with thermal conductors Yoshida (U.S. Patent No. 11,776,903 B2) discloses a semiconductor package with thermal conductor Jafari et al. (U.S. Publication No. 2010/0103604 A1) discloses a semiconductor package with thermal conductors Any inquiry concerning this communication or earlier communications from the examiner should be directed to JONATHAN HAN whose telephone number is (571)270-7546. The examiner can normally be reached 9.00-5.00PM PST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, STEVEN LOKE can be reached at 571-272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JONATHAN HAN/Primary Examiner, Art Unit 2818
Read full office action

Prosecution Timeline

Oct 27, 2023
Application Filed
May 12, 2026
Non-Final Rejection mailed — §102, §103
Jul 07, 2026
Interview Requested

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
84%
Grant Probability
93%
With Interview (+9.7%)
2y 4m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1268 resolved cases by this examiner. Grant probability derived from career allowance rate.

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