Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2818
This examiner grants 83% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18518729 | SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18510063 | SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18498673 | INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18482154 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18448482 | INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18507695 | TRANSPARENT DISPLAY DEVICE WITH TOUCH SENSOR | Non-Final OA | LG Display Co., Ltd. |
| 18496667 | PACKAGES WITH ISOLATED DIES | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18344570 | SEMICONDUCTOR DEVICE INCLUDING AN ETCH STOP LAYER FOR CONTACT HOLE FORMATION | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 17877964 | DIE SIZE REDUCTION AND DEEP TRENCH DENSITY INCREASE USING DEEP TRENCH ISOLATION AFTER SHALLOW TRENCH ISOLATION INTEGRATION | Non-Final OA | Texas Instruments Incorporated |
| 17921598 | DISPLAY SUBSTRATE, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR DISPLAY SUBSTRATE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18500891 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18453336 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18567228 | Display Device, Method For Manufacturing Display Device, Display Module, and Electronic Device | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18182856 | DISPLAY PIXELS MADE FROM STACKED MICRO-LED STRUCTURES AND PHOTOLUMINESCENT MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 17956779 | INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT | Non-Final OA | Intel Corporation |
| 18558182 | DISPLAY PANEL AND MOBILE TERMINAL | Non-Final OA | WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. |
| 18198318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18317351 | STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR NANOSTRUCTURES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18314555 | LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHEET DEVICE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18308982 | SEMICONDUCTOR STRUCTURE WITH TESTLINE AND METHOD OF FABRICATING SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18301450 | SYMMETRIC BOND SIGNAL INTEGRITY PRESERVATION STRUCTURE AND METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18477503 | MANAGING VERTICAL STRUCTURES IN THREE-DIMENSIONAL SEMICONDUCTIVE DEVICES | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18307173 | APPLICATIONS OF TWO-DIMENSIONAL SILICON CARBIDE AS THE CHANNEL LAYER IN FIELD-EFFECT TRANSISTORS | Final Rejection | UNM RAINFOREST INNOVATIONS |
| 18477544 | ELECTRONIC CHIP WITH UBM-TYPE METALLIZATION | Non-Final OA | Commissariat à l'Énergie Atomique et aux Énergies Alternatives |
| 18558464 | PHOTODETECTOR APPARATUS AND METHOD OF DETECTING LIGHT | Non-Final OA | Max-Planck-Gesellschaft Zur Foerderung der Wissenschaften e. V. |
| 18200848 | MICRO LIGHT-EMITTING DIODE PANEL STRUCTURE | Final Rejection | RAYLEIGH VISION LIMITED |
| 18489999 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Non-Final OA | MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD. |
| 18368787 | FLOATING GATE NAND CELL – METHODS AND APPROACHES FOR FABRICATION | Non-Final OA | Intel NDTM US LLC |
| 18230710 | INTEGRATED CIRCUIT DEVICE INCLUDING A POWER RAIL | Non-Final OA | SAMSUNG ELETRONICS CO., LTD. |
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