Prosecution Insights
Last updated: April 19, 2026
Application No. 18/498,644

SYSTEMS AND METHODS FOR CONNECTING INTEGRATED CIRCUITS

Non-Final OA §102§103
Filed
Oct 31, 2023
Examiner
OH, JAEHWAN
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Avago Technologies International Sales Pte. Ltd.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
95%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allow Rate
555 granted / 656 resolved
+16.6% vs TC avg
Moderate +10% lift
Without
With
+10.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
23 currently pending
Career history
679
Total Applications
across all art units

Statute-Specific Performance

§101
0.9%
-39.1% vs TC avg
§103
47.4%
+7.4% vs TC avg
§102
36.8%
-3.2% vs TC avg
§112
7.4%
-32.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 656 resolved cases

Office Action

§102 §103
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . DETAILED ACTION Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-2, 5-20 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Rubin et al. (U.S. Patent Application Publication 2023/0197705, hereinafter referred to as Rubin). As to claim 1, Rubin teaches 1. A device comprising: a first circuit [105 in Fig. 7] comprising a first side, the first side comprising a first region and a second region, the first circuit comprising a first interconnect; a second circuit [150F in Fig. 7] coupled to the first region, the second circuit being coupled to the first circuit through the first interconnect; a third circuit [150F2 in Fig. 7] coupled to the second region, the third circuit being coupled to the first circuit through the first interconnect; a second interconnect coupled to the third circuit; and a fourth circuit [750 in Fig. 7] coupled to the third circuit through the second interconnect. As to claim 2, Rubin teaches 2. The device of claim 1, further comprising a first memory coupled to the second circuit, the second circuit comprising a second memory. [150F in Fig. 7] As to claim 5, Rubin teaches 5. The device of claim 1, further comprising an interposer comprising the second interconnect. [¶0061, 0079] As to claim 6, Rubin teaches 6. The device of claim 1, wherein the fourth circuit comprises a processor. [¶0039] As to claim 7, Rubin teaches 7. The device of claim 1, wherein the first circuit is coupled to the second circuit by hybrid copper bonding. [¶0079] As to claim 8, Rubin teaches 8. The device of claim 1, wherein the first circuit is coupled to the third circuit by hybrid copper bonding. [¶0079] As to claim 9, Rubin teaches 9. The device of claim 1, wherein the third circuit comprises a first physical layer circuit. [¶0085] As to claim 10, Rubin teaches 10. The device of claim 9, wherein the fourth circuit comprises a second physical layer circuit, the first physical layer circuit is coupled to the second physical layer circuit through the second interconnect. [¶0085] As to claim 11, Rubin teaches 11. The device of claim 1, wherein: the first side comprises a metal layer; and the first circuit further comprises a second side, the second side comprises a silicon layer. [¶0077] As to claim 12, Rubin teaches 12. The device of claim 1, wherein the first interconnect comprises a bus operating at a first speed and the first circuit comprises a logic circuit operating at a second speed, the first speed being higher than the second speed. [¶0044; 0079] As to claim 13, Rubin teaches 13. The device of claim 12, wherein: the third circuit comprises a gearbox circuit; the fourth circuit operates at a third speed; and the gearbox circuit is configured to match the first speed to the third speed. [¶0044; 0079] As to claim 14, Rubin teaches 14. The device of claim 1, further comprising a die coupled to the third circuit. [Fig. 7~8] As to claim 15, Rubin teaches 15. A device comprising: a first circuit [105] comprising a first side and a second side, the first side comprising a first region and a second region, the first circuit comprising a first interconnect; a second circuit coupled to the first region, the second circuit [150F] being coupled to the first circuit through the first interconnect; a third circuit [150F2] coupled to the second region, the third circuit [150N] being coupled to the first circuit through the first interconnect; an interposer [405] coupled to the second side; and a fourth circuit [750] coupled to the third circuit through the interposer. [see Fig. 7] As to claim 16, Rubin teaches 16. The device of claim 15, wherein the first side comprises a metal layer, and the second side comprises a silicon layer. [¶0077] As to claim 17, Rubin teaches 17. The device of claim 15, wherein the third circuit comprises a first physical layer circuit, the fourth circuit comprises a second physical layer circuit, and the first physical layer circuit is coupled to the second physical layer circuit through the interposer. [¶0085; 0087] As to claim 18, Rubin teaches 18. The device of claim 15, wherein the first circuit is coupled to the second circuit by hybrid copper bonding. [¶0079] As to claim 19, Rubin teaches 19. A device comprising: a first circuit comprising a first side, the first side comprising a first region and a second region, the first circuit comprising a first interconnect; a second circuit coupled to the first region, the second circuit being coupled to the first circuit through the first interconnect; a third circuit coupled to the second region, the third circuit comprising a first physical layer circuit; a second interconnect coupled to the third circuit; and a fourth circuit comprising a second physical layer circuit, the second physical layer circuit being coupled to the first physical layer circuit through the second interconnect. [see 105, 150F, 150F2, 750 in Fig. 7] As to claim 20, Rubin teaches 20. The device of claim 19, wherein the first interconnect comprises a bus operating at a first speed and the first circuit comprises a logic circuit operating at a second speed, the first speed being higher than the second speed. [¶0044; 0079] Claim Rejections - 35 USC § 103 1. The following is a quotation of 35 U.S.C. 103(a) which forms the basis for all obviousness rejections set forth in this Office action: (a) A patent may not be obtained though the invention is not identically disclosed or described as set forth in section 102 of this title, if the differences between the subject matter sought to be patented and the prior art are such that the subject matter as a whole would have been obvious at the time the invention was made to a person having ordinary skill in the art to which said subject matter pertains. Patentability shall not be negatived by the manner in which the invention was made. 2. Claim 3-4 rejected under 35 U.S.C. 103(a) as being unpatentable over Rubin in view of Dokania et al. (U.S. Patent Application Publication 23230059491, hereinafter referred to as Dokania). As to claim 3, Rubin may not explicitly teach 3. The device of claim 2, wherein the first memory circuit comprises a first through silicon via (TSV) and the second memory circuit comprises a second TSV, the first TSV being coupled to the second TSV through a micro bump. Dokania teaches this limitation [¶0077 for example] Therefore, it would have been obvious to one of ordinary skill in the art at the time the invention was made to combine the teachings of Rubin and Dokania to “use TSV" in Rubin according to Dokania, for the further advantage of “utilizing known method of coupling stacked dies”. [..FIG. 3B illustrates a cross-section of a package 320 where compute die 303 is below memory die 304, where compute die 303 is perforated with high-density through-silicon vias (TSVs) to couple with the bumps between compute die 303 and memory die 304…¶0077] As to claim 4, Rubin and Dokania teaches 4. The device of claim 1, wherein the third circuit comprises a driver. [¶0088 Dokania] Conclusion Claims 1-20 are rejected as explained above. The prior art made of record in the PTO-892 form and not relied upon is considered pertinent to applicant's disclosure. Any inquiry concerning this communication or earlier communications from the examiner should be directed to JAEHWAN OH whose telephone number is (571) 270-5800. The examiner can normally be reached on Monday - Friday 9:00 AM-5:00PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Zandra Smith can be reached on 571-272-2429. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JAEHWAN OH/ Primary Examiner, Art Unit 2899
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Prosecution Timeline

Oct 31, 2023
Application Filed
Dec 27, 2025
Non-Final Rejection — §102, §103
Apr 07, 2026
Applicant Interview (Telephonic)
Apr 07, 2026
Examiner Interview Summary

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
95%
With Interview (+10.4%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 656 resolved cases by this examiner. Grant probability derived from career allow rate.

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