Prosecution Insights
Last updated: April 19, 2026
Application No. 18/511,078

Semiconductor Package

Non-Final OA §103
Filed
Nov 16, 2023
Examiner
SUN, YU-HSI DAVID
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Seiko Epson Corporation
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
2y 9m
To Grant
85%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allow Rate
648 granted / 845 resolved
+8.7% vs TC avg
Moderate +8% lift
Without
With
+8.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 9m
Avg Prosecution
27 currently pending
Career history
872
Total Applications
across all art units

Statute-Specific Performance

§101
3.0%
-37.0% vs TC avg
§103
45.9%
+5.9% vs TC avg
§102
25.5%
-14.5% vs TC avg
§112
16.6%
-23.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 845 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-2 are rejected under 35 U.S.C. 103 as being unpatentable over in view of KWON et al. (US PG Pub 2022/0122908, hereinafter Kwon1 in view of Lin et al. (US PG Pub 2024/0094104) and KWON et al. (US PG Pub 2023/0099351, hereinafter Kwon2). Regarding claim 1, figure 6 of Kwon1 discloses a semiconductor package comprising: an interposer (210); metal wiring (230) at the interposer; a first bump disposed (310) at the metal wiring; a semiconductor chip (100) disposed at the first bump and including a pad (120) electrically coupled to the first bump; and a second bump (350) disposed at the metal wiring. Kwon1 does not explicitly disclose a silicon interposer. In the same field of endeavor, Lin discloses silicon as a suitable material for an interposer (¶ 51). In light of such teachings, it would have been obvious to one of ordinary skill in the art at the time the invention was made to include silicon in the interposer as taught by Lin for the purpose of choosing from a finite number of identified, predictable solutions, with a reasonable expectation of success (KSR International Co. v. Teleflex Inc. 82 USPQ2d 1385 (2007)). Kwon1 does not explicitly disclose a photosensitive resin disposed at the silicon interposer and including an opening portion; the second bump is at the metal wiring in a region that overlaps the photosensitive resin in a plan view. In the same field of endeavor, figure 1B of Kwon2 discloses a solder resist layer (114A/114B) including an opening portion; with a metal wiring (112) disposed in the opening portion and a second bump (140) at the metal wiring in a region that overlaps the solder resist in a plan view. In light of such teachings, it would have been obvious to one of ordinary skill in the art at the time the invention was made to form the solder resist layer on the interposer of Kwon1 as taught by Kwon2 for the purpose of preventing contact defect issues (¶ 83). Finally, it is well known in the art that photosensitive resin is material for solder resist and it would have been obvious to use it for the solder resist layer of Kwon 2 for the purpose of choosing from a finite number of identified, predictable solutions, with a reasonable expectation of success (KSR International Co. v. Teleflex Inc. 82 USPQ2d 1385 (2007)). Regarding claim 2, the combined references (particularly figure 1B of Kwon2) discloses an end portion of the photosensitive resin in the opening portion (of 114B) is on an outer side with respect to an outer edge of the semiconductor chip (120) and on an inner side with respect to an edge of the second bump (140). Claims 3-6 are rejected under 35 U.S.C. 103 as being unpatentable over in view of Kwon1 in view of Lin and Kwon2, as applied to claim 2, further in view of MYUNG et al. (US PG Pub 2023/0132054, hereinafter Myung). Regarding claim 3, Kwon1 does not explicitly disclose a dummy pad disposed apart from the pad (120) on a surface of the semiconductor chip (100) where the pad is disposed; a dummy bump coupled to the dummy pad; and a dummy metal layer disposed between the dummy bump and the silicon interposer in a region of the opening portion. In the same field of endeavor, figures 1A and 1B of Myung disclose a dummy pad (252) disposed apart from a pad (251) on a surface of a semiconductor chip (300) where the pad is disposed; a dummy bump (320) coupled to the dummy pad; and a dummy metal layer (112) disposed between the dummy bump and the interposer (100). In light of such teachings, it would have been obvious to one of ordinary skill in the art at the time the invention was made to form the dummy pad, bump, and metal layer (which would be in a region of the opening portion since the entire die of Kwon1 is in the opening portion) as taught by Myung for the purpose of preventing substrate warpage (¶ 114). Regarding claim 4, Myung discloses he dummy bump (320) is in an electrically floating state (¶ 34). Regarding claim 5, figure 1A of Myung discloses the dummy bump (320) includes a plurality of dummy bumps, and the plurality of dummy bumps are disposed in a lattice pattern at the dummy metal layer. Regarding claim 6, figure 1A of Myung discloses the dummy bump (320) includes a plurality of dummy bumps, and the plurality of dummy bumps are disposed at a higher density in a region that overlaps a heat-generating body of the semiconductor chip than in a region that does not overlap the heat-generating body (regions not overlapping the semiconductor chip). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to YU-HSI DAVID SUN whose telephone number is (571)270-5773. The examiner can normally be reached Mon-Fri 8am-4pm ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Marlon Fletcher can be reached at 571-272-2063. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /YU-HSI D SUN/ Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Nov 16, 2023
Application Filed
Feb 23, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604693
METHOD OF MANUFACTURING CHIPS
2y 5m to grant Granted Apr 14, 2026
Patent 12598821
CHIP PACKAGE STRUCTURE AND METHOD FOR PRODUCING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12593717
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
2y 5m to grant Granted Mar 31, 2026
Patent 12581982
BONDING WIRE FOR SEMICONDUCTOR DEVICES
2y 5m to grant Granted Mar 17, 2026
Patent 12582016
SEMICONDUCTOR DEVICE
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
85%
With Interview (+8.4%)
2y 9m
Median Time to Grant
Low
PTA Risk
Based on 845 resolved cases by this examiner. Grant probability derived from career allow rate.

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