DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55.
Election/Restrictions
Applicant’s election without traverse of claims 1-5, 7, 8, and 13-15 in the reply filed on July 9, 2026 is acknowledged.
Information Disclosure Statement
The information disclosure statement filed July 5, 2024 fails to comply with 37 CFR 1.98(a)(2), which requires a legible copy of each cited foreign patent document; each non-patent literature publication or that portion which caused it to be listed; and all other information or that portion which caused it to be listed. It has been placed in the application file, but the information referred to therein for which copies have not been provided has not been considered.
Drawings
The drawings are objected to as failing to comply with 37 CFR 1.84(p)(5) because they include the following reference character(s) not mentioned in the description: 714f in Figure 7C. See specification objections section for recommended change to address the drawing objection.
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Corrected drawing sheets in compliance with 37 CFR 1.121(d), or amendment to the specification to add the reference character(s) in the description in compliance with 37 CFR 1.121(b) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Specification
The disclosure is objected to because of the following informalities:
Page 28, paragraph 79, line 7: After 722f, add a comma and “which itself includes a conductive tip portion 714f,”. This addresses the drawing objection.
Appropriate correction is required.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-5, 7, 8, and 13-15 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Regarding claim 1: This claim requires “a through substrate via (TSV) structure disposed in an opening extending at least partially through the bulk portion from the front side to the back side….” This language encompasses a TSV that is partially through the bulk portion from the front side to the back side, and a TSV that is fully through the bulk portion from the front side to the back side. While the interpretation “a TSV that is fully through the bulk portion from the front side to the back side” makes sense, “a TSV that is partially through the bulk portion from the front side to the back side” does not make sense because if the TSV is only partially through the bulk portion then the TSV does not extend to the back side. Because the language is confusing, claim 1 is rejected as indefinite.
Claims 2-5, 7, 8, and 13-15 are rejected for depending from rejected claim 1.
Regarding claim 13, which depends from claim 1: This claim is rejected on two bases. First, claim 1 defines “a through substrate via (TSV) structure disposed in an opening extending at least partially through the bulk portion….” Claim 13 then requires: “wherein the first element comprises a plurality of TSV structures….” A question arises as to the relationship between the claim 1 TSV and the claim 13 plurality of TSVs—is the claim 1 TSV a part of the claim 13 plurality of TSVs or is the claim 1 TSV separate from the claim 13 TSVs. Because claim 13 is unclear on this point, claim 13 is rejected as indefinite.
Second, claim 13 requires “wherein a thickness of a conductive tip portion of one TSV structure of the plurality is different from a thickness of a conductive tip portion of another TSV structure of the plurality by more than 1%.” This language is unclear as to what the 1% is of—the larger or the smaller of the thicknesses? Also, because there is no upper limit on the claim, the claim is indefinite.1
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 1 and 14 are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Vanalli, U.S. Pat. Pub. No. 2010/0032834, Figures 1-9.
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Regarding claim 1: Vanalli Figures 1-9 discloses a microelectronic structure comprising: a first element (100) comprising a bulk portion having a front side (S1) and a back side (S2) opposite the front side (S1); and a through substrate via (TSV) structure (115, 125, portion of 120 between 115 and 125) disposed in an opening (105) extending at least partially through the bulk portion from the front side (S1) to the back side (S2), the TSV structure (115, 125, portion of 120 between 115 and 125) comprising: a conductive tip portion (115) and a second conductive via portion (125), the second conductive via portion (125) disposed between the front side (S1) and the conductive tip portion (115), the conductive tip portion (115) containing a different conductive material than the second conductive via portion (125). Vanalli specification ¶¶ 24-39.
Regarding claim 14, which depends from claim 1: Vanalli discloses a barrier layer (120) disposed along at least a portion of an interface between the TSV structure (115, 125, portion of 120 between 115 and 125) and bulk portion (100). Id. ¶¶ 29, 30, 33.
Claims 1, 3-5, and 8 are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Haba, U.S. Pat. Pub. No. 2014/0175654, Figures 10-16.
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Regarding claim 1: Haba Figures 10-16 disclose a microelectronic structure (200) comprising: a first element (201) comprising a bulk portion (201) having a front side (202) and a back side (203) opposite the front side (202); and a through substrate via (TSV) structure (212, 214) disposed in an opening (204) extending at least partially through the bulk portion (201) from the front side (202) to the back side (203), the TSV structure (212, 214) comprising: a conductive tip portion (212) and a second conductive via portion (214), the second conductive via portion (214) disposed between the front side (202) and the conductive tip portion (212), the conductive tip portion (212) containing a different conductive material than the second conductive via portion (214). Haba specification ¶¶ 29-32.
Regarding claim 3, which depends from claim 1: Haba discloses the conductive tip portion (212) comprises nickel, id. ¶ 29, which applicants’ disclosure indicates is a material less susceptible than copper to smearing during chemical mechanical polishing (CMP).
Regarding claim 4, which depends from claim 3: Haba discloses the second conductive via portion (214) is predominantly copper. Id.
Regarding claim 5, which depends from claim 4: Haba discloses the conductive tip portion comprises nickel. Id.
Regarding claim 8, which depends from claim 1: Haba discloses a dielectric layer (solder mask (216)) disposed on the back side of the bulk portion (201), wherein the conductive tip portion (212) is recessed relative to the dielectric layer (solder mask (216)). Haba specification ¶ 32.
Claims 1 and 14 are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Kim, U.S. Pat. Pub. No. 2013/0119547, Figures 1A-1M.
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Regarding claim 1: Kim Figures 1A-1M disclose a microelectronic structure (10) comprising: a first element (102) comprising a bulk portion (102) having a front side (upper side of figures) and a back side (lower side of figures) opposite the front side; and a through substrate via (TSV) structure (158) disposed in an opening (130) extending at least partially through the bulk portion (102) from the front side to the back side, the TSV structure (158) comprising: a conductive tip portion (144P) and a second conductive via portion (154P), the second conductive via portion (154P) disposed between the front side (upper side of figures) and the conductive tip portion (144P), the conductive tip portion (144P) containing a different conductive material than the second conductive via portion. Kim specification ¶¶ 45-92.
Regarding claim 14, which depends from claim 1: Kim discloses a barrier layer (142) and/or a seed layer (144A) disposed along at least a portion of an interface between the TSV structure (158) and bulk portion (102). Id. ¶¶ 56-59, 70.
Claims 1, 2, and 13-15 are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Fountain, U.S. Pat. Pub. No. 2022/0246497, Figures 4A-4H.
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Regarding claim 1: Fountain Figures 4A-4H disclose a microelectronic structure comprising: a first element (404/416) comprising a bulk portion (404/416) having a front side (406) and a back side (408) opposite the front side (406); and a through substrate via (TSV) structure (410) disposed in an opening (unnumbered) extending at least partially through the bulk portion (404/416) from the front side (406) to the back side (408), the TSV structure (410) comprising: a conductive tip portion (424) and a second conductive via portion (402), the second conductive via portion (402) disposed between the front side (406) and the conductive tip portion (424), the conductive tip portion (424) containing a different conductive material than the second conductive via portion (402). Fountain specification ¶¶ 27-36.
Regarding claim 2, which depends from claim 1: Fountain discloses the back side (408) of the first element (404/416) is prepared for hybrid bonding. Id. ¶¶ 31, 35, 38, 52.
Regarding claim 13, which depends from claim 1: Fountain discloses the first element (404/416) comprises a plurality of TSV structures (410), wherein a thickness of a conductive tip portion (424) of one TSV structure (410) of the plurality is different from a thickness of a conductive tip portion (424) of another TSV structure (410) of the plurality by more than 1%. See id. ¶¶ 28 (describing process by which TSV thicknesses can differ), 29-35. See also Fountain Figure 4G.
Regarding claim 14, which depends from claim 1: Fountain discloses a barrier layer (413) and/or a seed layer (disclosed, Fountain specification ¶¶ 27, 31, but not shown) disposed along at least a portion of an interface between the TSV structure (410) and bulk portion (404/416). Id. ¶¶ 27, 31.
Regarding claim 15, which depends from claim 1: Fountain discloses a second element hybrid bonded to the back side of the first element. Id. ¶¶ 35, 38.
Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claim 7 is rejected under 35 U.S.C. 103 as being unpatentable over Haba, and further in view of Kwon, U.S. Pat. Pub. No. 2007/0284729.
Regarding claim 7, which depends from claim 4: Haba discloses that its conductive tip portion comprises nickel, but is silent as to whether the conductive tip portion comprises indium.
Kwon, directed to similar subject matter, discloses a conductive top portion (170) that comprises indium. Kwon specification ¶ 70. One having ordinary skill in the art at a time before the effective filing date would be motivated to modify Haba to use the Kwon material because the modification would have involved the substitution of an equivalent known for the same purpose.
Claim 8 is rejected under 35 U.S.C. 103 as being unpatentable over Haba, and further in view of Uzoh, U.S. Pat. Pub. No. 2014/0159249.
Regarding claim 8, which depends from claim 1: To the extent that a solder mask is not necessarily considered to be a dielectric layer, Uzoh, directed to similar subject matter, discloses a solder mask material that can be a photoimageable polymeric material, which is an example of a dielectric material. Uzoh specification ¶ 47. One having ordinary skill in the art at a time before the effective filing date would be motivated to modify Haba to use the Uzoh material because the modification would have involved the substitution of an equivalent known for the same purpose.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to VICTORIA KATHLEEN HALL whose telephone number is (571)270-7567. The examiner can normally be reached Monday-Friday, 8 a.m.-5 p.m.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Fernando Toledo can be reached at 571-272-1867. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/Victoria K. Hall/Primary Examiner, Art Unit 2897
1 For the record, the Office considered a Section 112(a) scope of enablement rejection based on the absence of an upper limit on the “more than 1%” requirement. However, there is implicitly an upper limit—100%. Therefore, a Section 112(a) scope of enablement rejection was not made.
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