Prosecution Insights
Last updated: April 19, 2026
Application No. 18/516,367

SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE

Non-Final OA §102§103
Filed
Nov 21, 2023
Examiner
DOAN, THERESA T
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
88%
Grant Probability
Favorable
1-2
OA Rounds
2y 1m
To Grant
93%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allow Rate
791 granted / 896 resolved
+20.3% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
24 currently pending
Career history
920
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
42.2%
+2.2% vs TC avg
§102
38.4%
-1.6% vs TC avg
§112
3.3%
-36.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 896 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-8, 11-17 and 20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin et al. (2013/0200528). Regarding claims 1, 3, 11 and 20, Lin (Fig. 31) discloses a semiconductor package 860 comprising: a first redistribution wiring layer 782 having a first region (the region between two # 776) and a second region (the # 776 on the left and the # 776 on the right) surrounding the first region ([0245]), the first redistribution wiring layer 782 including a plurality of first redistribution wirings 740 ([0229]); a semiconductor chip 276 disposed on the first region of the first redistribution wiring layer 740 and electrically connected to the plurality of first redistribution wirings 740 ([0245]); a sealing member (696, 764) on the first redistribution wiring layer 782 ([0219]), the sealing member (696, 764) covering the semiconductor chip 276 on the first redistribution wiring layer 740 ([0219] and [0246]); a plurality of vertical conductive wires 776 penetrating the sealing member (696, 764) on the second region of the first redistribution wiring layer 740 and electrically connected to the plurality of first redistribution wirings 740 ([0241]); a second redistribution wiring layer 786 disposed on the sealing member (696, 764) ([0247]), the second redistribution wiring layer 786 including a plurality of second redistribution wirings 740 electrically connected to the plurality of vertical conductive wires 776; and a plurality of bonding pads 720/722 provided on an upper surface of the first redistribution wiring layer 782 ([0220]) or a lower surface of the second redistribution wiring layer 786, wherein each of the plurality of bonding pads 722 has a concavo-convex pattern in a bonding surface thereof ([0220]), and the concavo-convex pattern has a plurality of grooves filled with a metal of the corresponding vertical conductive wire 776 (see Fig. 31, [0280]). Regarding claims 2 and 12, Lin (Fig. 31) discloses wherein each of the plurality of bonding pads 722 includes copper ([0242]), and each of the plurality of vertical conductive wires 776 includes at least one of gold, silver and copper ([0280]). Regarding claims 4 and 13, Lin (Fig. 31) discloses wherein the concavo-convex pattern is provided in the surface of the bonding pad 722 and a side surface of the bonding pad 722. Regarding claims 5 and 14, Lin (Fig. 31) discloses further comprising: a plating pattern provided on the concavo-convex pattern ([0241]). It is note that the process limitation (a plating pattern) would not carry patentable weight in this claim drawn to a structure, because distinct structure is not necessarily produced. In re Thorpe, 227 USPQ 964 (Fed. Cir. 1985). Regarding claims 6 and 15, Lin (Fig. 31) discloses wherein the plating pattern 776 includes at least one of nickel and gold ([0280]). Regarding claims 7 and 16, Lin (Fig. 31) discloses wherein the concavo-convex pattern includes an embossed plating pattern formed on the surface of the bonding pad 722 (see Fig. 26m). Regarding claims 8 and 17, Lin (Fig. 31) discloses wherein the vertical conductive wire 776 covers a side surface of the bonding pad 722. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 9-10 and 18-19 is/are rejected under 35 U.S.C. 103 as being unpatentable over Lin et al. (2013/0200528) in view of Jung et al. (2022/0130786). Regarding claims 10 and 19, Lin discloses all the claimed limitations of the invention except for further comprising: a second package disposed on the second redistribution wiring layer, wherein the second package includes a package substrate and at least one second semiconductor chip stacked on the package substrate. However, Jung (Fig. 31) discloses a second package 600 disposed on the second redistribution wiring layer 350, wherein the second package 600 includes a package substrate 610 and at least one second semiconductor chip 620/630 stacked on the package substrate 610 (see Figs. 31, [0139]) in order to provide the device designed for an intended purpose. Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to modify the device of Lin by a second package disposed on the second redistribution wiring layer, wherein the second package includes a package substrate and at least one second semiconductor chip stacked on the package substrate in order to complete the semiconductor device for an intended purpose, as taught by Jung (Fig. 31, [0139]). Regarding claim 9, Lin (Fig. 31) discloses wherein the bonding pad 722 has a diameter of 1 µm to 500 µm ([0247]), and the vertical conductive wire 776 has a maximum diameter of 50 µm to 150 µm ([0238]). Lin does not tech the vertical conductive wire has a maximum diameter of 2.5 µm to 100 µm. However, the Federal Circuit held that, where the only difference between the prior art and the claims was a recitation of dimensions of the claimed device and a device having the claimed relative dimensions would not perform differently than the prior art device, the claimed device was not patentably distinct from the prior art device. In Gardner v. TEC Systems, Inc., 725 F. 2d 1338, 220 USPQ 777 (Fed. Cir. 1984), cert. denied, 469 U.S. 830, 225 USPQ 232 (1984). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to form the device as claimed above, because the dimensions can be optimized during routine experimentation, depending upon the device in a particular application. Regarding claim 18, Lin discloses all the claimed limitations of the invention except for the semiconductor chip is mounted on the first redistribution wiring layer via conductive bumps. However, Lin in different embodiment of Fig. 6 discloses wherein the semiconductor chip 112 is mounted on the first redistribution wiring layer 156 via conductive bumps 114 for depending upon the device in a particular application. Therefore, it would have been obvious to one having ordinary skill in the art before the effective filing date of the claimed invention was made to modify the embodiment in Fig. 6 of Lin’s device by forming the semiconductor chip is mounted on the first redistribution wiring layer via conductive bumps for depending upon the device in a particular application, as taught by the different embodiment in Fig. 6 of Lin. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to THERESA T DOAN whose telephone number is (571)272-1704. The examiner can normally be reached on Monday, Tuesday, Wednesday and Thursday from 7:00AM - 3:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, WAEL FAHMY can be reached on (571) 272-1705. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see https://ppair-my.uspto.gov/pair/PrivatePair. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /THERESA T DOAN/ Primary Examiner, Art Unit 2814
Read full office action

Prosecution Timeline

Nov 21, 2023
Application Filed
Jan 22, 2026
Non-Final Rejection — §102, §103
Feb 25, 2026
Interview Requested
Mar 04, 2026
Examiner Interview Summary
Mar 04, 2026
Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12598750
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
2y 5m to grant Granted Apr 07, 2026
Patent 12593718
MEMORY SYSTEM PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
2y 5m to grant Granted Mar 31, 2026
Patent 12593636
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
2y 5m to grant Granted Mar 31, 2026
Patent 12588511
SHIELDING ASSEMBLY FOR SEMICONDUCTOR PACKAGES
2y 5m to grant Granted Mar 24, 2026
Patent 12588527
DIELECTRIC INTERPOSER WITH ELECTRICAL-CONNECTION CUT-IN
2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
88%
Grant Probability
93%
With Interview (+5.1%)
2y 1m
Median Time to Grant
Low
PTA Risk
Based on 896 resolved cases by this examiner. Grant probability derived from career allow rate.

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