Prosecution Insights
Last updated: April 19, 2026
Application No. 18/517,629

METHOD AND SYSTEM FOR REFRESHING FLASH MEMORY DEVICE

Non-Final OA §103
Filed
Nov 22, 2023
Examiner
TRAN, ANTHAN
Art Unit
2825
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Innodisk Corporation
OA Round
3 (Non-Final)
83%
Grant Probability
Favorable
3-4
OA Rounds
2y 5m
To Grant
85%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
629 granted / 760 resolved
+14.8% vs TC avg
Minimal +2% lift
Without
With
+2.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
25 currently pending
Career history
785
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
52.6%
+12.6% vs TC avg
§102
33.6%
-6.4% vs TC avg
§112
5.2%
-34.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 760 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 11/18/2025 has been entered. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-14 are rejected under 35 U.S.C. 103 as being unpatentable over Shin et al. (US Pub. 2021/0118500) in view of Kim et al. (US Pub. 2020/0143871). Regarding claims 1 and 7, Fig. 7 of Shin discloses a method for refreshing a flash memory device, wherein the flash memory device comprises a main control unit [110, Fig. 4] and a plurality of flash memory units [within Memory Device 200, Fig. 4], the method comprising steps of: sending a performance value related to the plurality of flash memory units from the main control unit to a host [as discloses in paragraph 0100, when one of the memory unit fails to pass the sensing, the sensing data is transmitted to the host]; sending a refresh command from the host to the main control unit when the performance value is lower than a pre-determined value [as discloses in paragraph, when memory fails sensing operation (equivalent to performance less than a pre-determined value), host send commands to memory device to start refreshing operation, see paragraph 0045]; and enabling the main control unit to stop current operations of the plurality of flash memory units and execute a refresh operation on all valid data blocks [valid data block is relative. A data block can be valid to one user/controller and might not be valid for other. In this instances, all data on the memory block that the controller performing refreshing operation are valid data. Applicant need to clearly define what is valid data and what is not valid data] of the plurality of flash memory units in the flash memory device [as discloses in paragraph 0040, when refresh operation is executed, other memory operations are stopped. In addition, as shows in Fig. 7, when refresh operation (S140) performs, no other memory operation occurs at the same time]. Paragraph 0043 of Shin discloses user can control/activate various operations of the memory device. Since Shin operates refreshing operation, it is obvious if not inherent that Shin memory device user to send command to activate refreshing operation. In addition, Fig. 1 of Kim discloses a memory device [200] connects to a host [100], wherein user can input refresh command to a host [100] so that the host can send refresh command to memory controller to start refreshing operation [paragraphs 0040 and 0069]. It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to apply the teachings of Kim’s memory device having memory controller connects to a host to the teachings of Shin’s memory having memory controller and host such that Shin memory device operate in response to user command according to Kim’s teachings for the purpose of allowing user to control the memory operations. Regarding claim 2, Fig. 7 of Shin discloses prior to the step of sending the performance value from the main control unit, the method further comprising a step of: sending a request [as shows in Fig. 7, before data send to host in step S130, the host send command to start a read operation. By sending a reading command, the host indirectly initiate the transfer of data to the host if the reading fails] of the performance value related to the plurality of flash memory units from the host [100, Fig. 4] to the main control unit [110, Fig. 4]. Regarding claims 3, 8, Fig. 12 of Shin discloses after the main control unit executes the refresh operation [step S142], the method further comprising a step of: sending a refresh status from the main control unit to the host [S144] to show whether each of the plurality of flash memory units has been refreshed. Regarding claims 4, 9, and 14, Fig 5 of Shin discloses wherein the refresh command conforms to the requirements of non-volatile memory express (NVMe), serial advanced technologyattachment (SATA), inter-integrated circuit (12C) bus or general-purpose input/output (GPIO) [paragraphs 0046 to 0052]. Regarding claims 5, 10, Fig. 4 of Shin discloses wherein: the main control unit [110] is electrically connected to the host [100]; and the plurality of flash memory units [200] are electrically connected to the main control unit [110]. Regarding claims 6, 11, 13, Fig. 5 of Shin discloses wherein the main control unit comprises: a processing unit [220] configured to electrically communicate with the host [100, Fig. 4] through an interface unit [300]; a control logic unit [221] electrically connected between the processing unit and the plurality of flash memory units [210] and configured to be controlled by the processing unit to control the refresh operation on the plurality of flash memory units; and a buffer management unit [216] electrically connected between the control logic unit and the processing unit and configured to temporarily store data originally stored in the plurality of flash memory units during the refresh operation. Regarding claim 12, Fig. 4 of Shin discloses a system for refreshing a flash memory device, the system comprising: a host [100]; a main control unit [110, or 220 in Fig. 5] disposed in the flash memory device [200] and connected to the host [100]; and a plurality of flash memory units [210, Fig. 5] disposed in the flash memory device [200] and connected to the main control unit [220, Fig. 5], wherein the host [100] is configured to send a refresh command to the main control unit [paragraph 0045] to enable the main control unit to stop current operations of the plurality of flash memory units and execute a refresh operation on all valid data blocks [valid data block is relative. A data block can be valid to one user/controller and might not be valid for other. In this instances, all data on the memory block that the controller performing refreshing operation are valid data. Applicant need to clearly define what is valid data and what is not valid data] of the plurality of flash memory units in the flash memory device [as discloses in paragraph 0040, when refresh operation is executed, other memory operations are stopped. In addition, as shows in Fig. 7, when refresh operation (S140) performs, no other memory operation occurs at the same time]. Paragraph 0043 of Shin discloses user can control/activate various operations of the memory device. Since Shin operates refreshing operation, it is obvious if not inherent that Shin memory device user to send command to activate refreshing operation. In addition, Fig. 1 of Kim discloses a memory device [200] connects to a host [100], an interface disposed on the host [since user can input command through host 100, an interface disposed on the host is inherent], wherein user can input refresh command to a host [100] so that the host can send refresh command to memory controller to start refreshing operation [paragraphs 0040 and 0069]. It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to apply the teachings of Kim’s memory device having memory controller connects to a host to the teachings of Shin’s memory having memory controller and host such that Shin memory device operate in response to user command according to Kim’s teachings for the purpose of allowing user to control the memory operations. Response to Arguments Applicant's arguments filed 11/18/2025 have been fully considered but they are not persuasive. Applicant argues that Shin does not teach or suggest the host sending refreshing command to execute refresh operation on all valid data blocks of the plurality of flash memory units in the flash memory device. Applicant is reminded that the claims are examined in light of broadest reasonable interpretation. In addition, although the claims are examined in light of specification, limitations from specification are not read into the claims. “Valid data block” is relative. A data block can be valid to one user/controller and might not be valid for other. Since applicant does not clearly define what is and what is not valid data, any data stores in the refreshing memory cells are considered valid data. Therefore, all the data stores in the memory blocks that are being refreshing are considered all valid data block. Applicant need to clearly define what is valid data and what is not valid data. In addition, paragraph 0067 of Redaelli (US Pub. 2024/0069768) teach refreshing all memory blocks. Therefore, all applicant arguments were fully considered, they are not persuasive. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANTHAN T TRAN whose telephone number is (571)272-8709. The examiner can normally be reached MON-FRI, 9AM-5:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alexander G Sofocleous can be reached at 571-272-0635. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANTHAN TRAN/Primary Examiner, Art Unit 2825
Read full office action

Prosecution Timeline

Nov 22, 2023
Application Filed
May 30, 2025
Non-Final Rejection — §103
Aug 29, 2025
Response Filed
Sep 20, 2025
Final Rejection — §103
Nov 18, 2025
Request for Continued Examination
Nov 22, 2025
Response after Non-Final Action
Nov 29, 2025
Non-Final Rejection — §103 (current)

Precedent Cases

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Patent 12548605
INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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Patent 12548606
MULTI-MODE COMPATIBLE ZQ CALIBRATION CIRCUIT IN MEMORY DEVICE
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
83%
Grant Probability
85%
With Interview (+2.2%)
2y 5m
Median Time to Grant
High
PTA Risk
Based on 760 resolved cases by this examiner. Grant probability derived from career allow rate.

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