Tech Center 2800 • Art Units: 2825 2827
This examiner grants 83% of resolved cases
Anthan Tran works in Tech Center 2800 and Art Unit 2825. He has resolved 781 cases, maintaining an allowance rate of 83.0 percent. The median days to allowance for these cases is 839. These figures provide a baseline for practitioners navigating the examination process under his review. The 781 cases form the basis for his current performance data.
The interview lift is 2.4 percent, showing the impact of direct communication on the likelihood of success. While the 83.0 percent allowance rate is a baseline, the 2.4 percent lift indicates that interviews are a factor in his resolutions. With 781 cases resolved, the 83.0 percent allowance rate is a metric for practitioners to consider. The 839-day median and 2.4 percent lift are the primary data points for strategy in Art Unit 2825. These metrics from Tech Center 2800 offer a baseline for managing expectations during the prosecution of patent applications.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18967362 | MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18773949 | MAGNETIC MEMORY DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18987245 | MAGNONIC COMBINATORIAL MEMORY | Non-Final OA | The Regents of the University of California |
| 18773950 | MEMORY DEVICES, MEMORY SYSTEMS, AND OPERATION METHODS THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18505199 | APPARATUSES AND METHODS FOR DISTRIBUTED TARGETED REFRESH OPERATIONS | Final Rejection | Lodestar Licensing Group LLC |
| 18975567 | MEMORY DEVICE AND OPERATING METHOD THEREOF | Final Rejection | SK hynix Inc. |
| 18898293 | SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR MEMORY APPARATUS | Final Rejection | SK hynix Inc. |
| 19175711 | VOLTAGE MANAGEMENT FOR IMPROVED tRP TIMING FOR FeRAM DEVICES | Non-Final OA | Micron Technology, Inc. |
| 19011091 | APPARATUSES AND METHODS FOR CONTROLLING SENSE AMPLIFIER OPERATION | Non-Final OA | MICRON TECHNOLOGY, INC. |
| 18975963 | APPARATUSES AND METHODS FOR REDUNDANCY INFORMATION FOR MEMORY WITH MULTIPLE STORAGE MODES | Non-Final OA | Micron Technology, Inc. |
| 18920190 | DELAY OF INITIALIZATION AT MEMORY DIE | Non-Final OA | Micron Technology, Inc. |
| 18786963 | MEMORY DEVICE DISTURBANCE MITIGATION USING EXTRA PLATE | Final Rejection | Micron Technology, Inc. |
| 18662313 | ADJUSTING A SENSING VOLTAGE IN MEMORY | Final Rejection | Micron Technology, Inc. |
| 18625212 | MEMORY DEVICE WITH MULTIPLE PHYSICAL INTERFACES | Non-Final OA | Micron Technology, Inc. |
| 18937037 | SENSE AMPLIFIER, MEMORY DEVICE AND OPERATION METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18655568 | MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18213647 | 8-T SRAM BITCELL FOR FPGA PROGRAMMING | Non-Final OA | XILINX, INC. |
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