Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
DETAILED ACTION
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Independent Claim 1 recites the limitation "the second doped portion" in line 12 of the claim. There is insufficient antecedent basis for this limitation in the claim.
Examiner suggests changing “a second doped part” into “a second doped portion” in line 11. Furthermore, examiner further suggests the term “with in” to “within” on at the end of line 20, beginning of line 21. And for clarity, examiner suggests changing “perpendicular” to “extends in a direction perpendicular”. Furthermore, examiner suggests changing, on line 13, “a gate layer, wherein the gate layer comprises a gate” to “a gate layer, wherein the gate layer comprising a gate”. Finally examiner suggests changing, on lines 18-20, from “an area where two rows of single crystal particles parallel to the first edge on both sides of the one or more single crystal starting points is a single crystal area,” to “an area where two rows of single crystal particles parallel to the first edge on both sides of the one or more single crystal starting points where the area is defined as a single crystal area”. Examiner suggests changing “any one of the plurality” term near the beginning the claim to “each of the plurality”
Independent claim 11, recites the limitation "the second doped portion" in line 12 of the claim. There is insufficient antecedent basis for this limitation in the claim.
Examiner suggests changing “a second doped part” into “a second doped portion” in line 12. Furthermore, examiner further suggests the term “with in” to “within” on at the end of line 22. And for clarity, examiner suggests changing “perpendicular” to “extends in a direction perpendicular”. Examiner suggests changing “any one of the plurality” terms near the beginning and near the end of the claim to “each of the plurality”
Allowable Subject Matter
Claims 1-20 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action.
The following is a statement of reasons for the indication of allowable subject matter:
Regarding independent claim 1, prior art, and including Li et al. (20240363758) (Fig. 3 and 4) and Li et al. (20260006850) (Figs. 1 and 2), fails to disclose or fairly suggest a semiconductor device comprising, along with other recited claim limitations,
a connecting surface connected between the first top surface and the first bottom surface and arranged obliquely, wherein a junction of the connecting surface and the first top surface is a first edge, and a junction of the connecting surface and the first bottom surface is a second edge; the active layer comprises one or more single crystal starting points, the one or more single crystal starting points correspond to the first edge, crystal particles of the active layer grow horizontally and diffusely on the base and
the active defining portion in a direction perpendicular to the one or more single crystal starting points; an area where two rows of single crystal particles parallel to the first edge on both sides of the one or more single crystal starting points is a single crystal area, the channel portion is disposed in the single crystal area, and the gate is provided with in (“within”) a direction perpendicular to the base and covers only one row of the two rows of single crystal particles. Claims 2-9 depend from claim 1 and hence are also indicated as allowable subject matter pending the resolve of the 35 USC 112 issues described above.
Regarding independent claim 10, prior art, and including Li et al. (20240363758) (Fig. 3 and 4) and Li et al. (20260006850) (Figs. 1 and 2), failed to disclose or fairly suggest a display panel comprising, along with other recited claim limitations, an active defining portion is provided on the base, and the active defining portion comprises a first bottom surface in contact with a top surface of the base, a first top surface parallel to the first bottom surface, and a connecting surface connected between the first top surface and the first bottom surface and arranged obliquely, wherein a junction of the connecting surface and the first top surface is a first edge, and a junction of the connecting surface and the first bottom surface is a second edge, wherein the active layer comprises one or more single crystal starting points, crystal particles of the active layer grow horizontally and diffusely on the base and the active defining portion in a direction perpendicular to the one or more single crystal starting points, and the one or more single crystal starting points correspond to the first edge; an area where two rows of single crystal particles parallel to the first edge on both sides of the one or more single crystal starting points is a single crystal area, the channel portion is disposed in the single crystal area, and the gate is provided with in (“within”) a direction perpendicular to the base and covers only one row of the two rows of single crystal particles. Claims 11-20 depend from claim 10 and hence are also indicated as allowable subject matter pending the resolve of 35 USC 112 issues issued as described above.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to FAZLI ERDEM whose telephone number is (571)272-1914. The examiner can normally be reached M-F, 8am-5pm.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Davienne Monbleau can be reached at 571-272-1945. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/FAZLI ERDEM/Primary Examiner, Art Unit 2812 4/25/2026