Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2811 2812 2826
This examiner grants 85% of resolved cases
Fazli Erdem is a high-volume examiner in Tech Center 2800 and Art Unit 2811, with 1083 resolved cases. His allowance rate is 85.4 percent. The median time to allowance for these cases is 894 days. This 894 days duration indicates an efficient examination process for the large number of applications he handles.
The interview lift is 15.9 percent. Even with a high baseline allowance rate of 85.4 percent, an interview provides a significant further increase in the probability of a grant. This 15.9 percent lift suggests that direct communication remains a valuable tool for practitioners in this art unit. With 1083 resolved cases, the 85.4 percent allowance rate is a very reliable indicator of a favorable prosecution environment. The 15.9 percent lift offers a clear strategy for ensuring success in more complex cases. The 894 days median pendency is a positive factor for applicants seeking a timely grant.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18697127 | DISPLAY SUBSTRATE AND DISPLAY DEVICE | Final Rejection | BOE TECHNOLOGY GROUP CO., LTD. |
| 18887225 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18386363 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | LG Display Co., Ltd. |
| 18734056 | PACKAGE SUBSTRATE, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE | Final Rejection | HUAWEI TECHNOLOGIES CO., LTD. |
| 18538738 | INTEGRATED CIRCUIT DEVICE INCLUDING THERMAL INTERPOSER LAYER | Non-Final OA | QUALCOMM Incorporated |
| 18346087 | HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED LAYER | Non-Final OA | Intel Corporation |
| 18216830 | PASSIVE COOLING HEAT SPREADER WITH PHASE CHANGE MATERIAL INFUSED MESH | Non-Final OA | Intel Corporation |
| 18141887 | NITRIDE ETCH FOR CONSISTENT STEP HEIGHT FOR TSV REVEAL IN THE VIA MID FLOW | Final Rejection | Intel Corporation |
| 18687298 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, TEMPORARY-FIXING MATERIAL, AND APPLICATION FOR MANUFACTURING SEMICONDUCTOR DEVICE OF TEMPORARY-FIXING MATERIAL | Non-Final OA | Resonac Corporation |
| 18742604 | SELF-ALIGNED GATE CUT STRUCTURE | Non-Final OA | International Business Machines Corporation |
| 18621738 | METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED MICROELECTRONIC DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18889962 | STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR NANOSTRUCTURES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18754948 | SEMICONDUCTOR INTEGRATED CIRCUIT | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18679331 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18395203 | APPARATUS, SYSTEM, AND METHOD FOR UNIQUELY IDENTIFYING INDIVIDUAL DIES ACROSS DIE STACKS | Final Rejection | Advanced Micro Devices, Inc. |
| 18533285 | DISPLAY ELEMENT AND MANUFACTURING METHOD THEREOF | Non-Final OA | AUO Corporation |
| 18660776 | INTEGRATED THERMAL BRIDGES ON WIREBOND ASSEMBLED INTEGRATED CIRCUITS FOR HEAT SPREADING | Non-Final OA | Qorvo US, Inc. |
| 18654117 | FLATTENING AND SMOOTHING METALLIC WAFERS AND PLATES FOR FLEXIBLE ELECTRONICS | Non-Final OA | The Research Foundation for the State University of New York |
| 18725965 | METHOD FOR MANUFACTURING GATE-ALL-AROUND NANOSHEET STRUCTURE | Non-Final OA | INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
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