DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1-30 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lan et al. (20230197554).
Regarding Claim 1, in Fig. 3, Lan et al. discloses a device comprising: a die 310 including: a set of contacts 312 coupled to a first side of the die; and active circuitry 310 coupled to the set of contacts; a thermal interposer layer (TIL) 344 adjacent to the first side of the die, the TIL including a thermally conductive material having one or more though hole vias (THVs) aligned with one or more first contacts of the set of contacts; and a set of conductive connectors 332 that are coupled to the one or more first contacts and that extend through the THVs.
Regarding Claim 2, a package substrate 350 including a second set of contacts, wherein one or more second contacts of the second set of contacts are coupled to the set of conductive connectors.
Regarding Claim 3, in Lang et al., at least one THV of the one or more THVs has an oblong cross-section.
Regarding Claim 4, in Lang et al, one conductive connector of the set of conductive connectors 332 corresponds to a non-circular thermal bar that extends through the at least one THV having the oblong cross-section.
Regarding Claim 5, in Lang et al, at least one THV of the one or more THVs has a substantially circular cross-section.
Regarding Claim 6, in Lang et al., in paragraph 0036, at least one of the set of conductive connectors includes copper.
Regarding Claim 7, in Lang et al., in paragraphs 0032 and 035, the thermally conductive material includes alumina ceramic.
Regarding Claim 8, in Lang et al, in paragraphs 0046 and 0048, the thermally conductive material includes aluminum nitride.
Regarding Claim 9, in Lang et al, in paragraphs 0030 and 0031 the thermally conductive material includes silicon carbide (SiC).
Regarding Claim 10, in Lang et al, in paragraphs 0031 and 0032, the die corresponds to a chiplet that is separated from a package substrate by the TIL.
Regarding Claim 11, in paragraphs 0031 and 0032 of Lang et al, a second chiplet that is separated from the package substrate by a second TIL.
Regarding Claim 12, in Lang et al, TIL dissipates heat from the die.
Regarding Claim 13, in Lang et al,: a heat sink; and thermal interface material (TIM) adjacent to a second side of the die that is opposite the first side, wherein the TIM is between the heat sink and the die.
Regarding Claim 14, in Lang et al, in paragraphs 0059, 0061 and 0062, a high-bandwidth memory (HBM) module including a set of second conductive connectors that extend through the HBM module and that are aligned with the set of conductive connectors.
Regarding Claim 15, Lang discloses method of fabrication comprising: forming a thermal interposer layer (TIL) 344 including a thermally conductive material having one or more through hole vias (THVs); forming a set of conductive connectors 332 that are coupled to one or more first contacts of a die, the die including a set of contacts coupled to a first side of the die, wherein the die includes active circuitry coupled to the set of contacts, and wherein the set of contacts includes the one or more first contacts; and attaching the TIL to the die with the set of conductive connectors extending through the one or more THVs to couple to the one or more first contacts.
Regarding Claim 16, in Lang, filling gaps between the set of conductive connectors and the thermally conductive material.
Regarding Claim 17, in Lang, forming solder bumps 338 on the set of conductive connectors; and electrically connecting one or more second contacts of a package substrate to the solder bumps.
Regarding Claim 18, in Lang, at least one THV of the one or more THVs has an oblong cross-section.
Regarding Claim 19, in Lang, at least one conductive connector of the set of conductive connectors corresponds to a non-circular thermal bar that extends through the at least one THV having the oblong cross-section.
Regarding Claim 20, in Lang, at least one THV of the one or more THVs has a substantially circular cross-section.
Regarding Claim 21, in Lang, in paragraphs 0030.0035 and 0036, at least one of the set of conductive connectors includes copper.
Regarding Claim 22, in paragraphs 0032 and 0035 of Lang, the thermally conductive material includes alumina ceramic.
Regarding Claim 23, in Lang, the thermally conductive material includes aluminum nitride.
Regarding Claim 24, in Lang, the thermally conductive material includes silicon carbide (SiC).
Regarding Claim 25, in Lang, the die corresponds to a chiplet that is separated from a package substrate by the TIL.
Regarding Claim 26, in Lang, wherein the TIL dissipates heat from the die.
Regarding Claim 27, Lang disclose a device comprising: a first chiplet including: a first set of contacts coupled to a first side of the first chiplet; and first active circuitry coupled to the first set of contacts; a first thermal interposer layer (TIL) 344 adjacent to the first side of the first chiplet, the first TIL including first thermally conductive material having one or more first though hole vias (THVs) aligned with one or more first contacts of the first set of contacts; a first set of conductive connectors 332 that are coupled to the one or more first contacts and that extend through the first THVs; and a package substrate including a set of substrate contacts, one or more first substrate contacts of the set of substrate contacts coupled to the first set of conductive connectors.
Regarding Claim 28, in paragraphs 0031 and 0032 of Lang it is disclosed a second chiplet including: a second set of contacts coupled to a second side of the second chiplet; and second active circuitry coupled to the second set of contacts; a second TIL adjacent to the second side of the second chiplet, the second TIL including second thermally conductive material having one or more second THVs aligned with one or more second contacts of the second set of contacts; and a second set of conductive connectors that are coupled to the one or more second contacts and that extend through the second THVs, one or more second substrate contacts of the set of substrate contacts coupled to the second set of conductive connectors.
Regarding Claim 29, in Lang, a first THV of the one or more first THVs has an oblong cross-section.
Regarding Claim 30, in Lang, a first conductive connector of the first set of conductive connectors corresponds to a non-circular thermal bar that extends through the first THV.
Examiner is including Nakazawa (202217732) and Lee (20240136267) as pertinent prior art references that are not relied upon but that teach heat dissipation configurations.
Conclusion
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/FAZLI ERDEM/Primary Examiner, Art Unit 2812 2/4/2026