Prosecution Insights
Last updated: July 17, 2026
Application No. 18/539,353

WRAP AROUND CONTACT WITH IMPROVED METAL THICKNESS

Non-Final OA §112
Filed
Dec 14, 2023
Examiner
CHOU, SHIH TSUN A
Art Unit
2811
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
International Business Machines Corporation
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
357 granted / 466 resolved
+8.6% vs TC avg
Strong +18% interview lift
Without
With
+17.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
37 currently pending
Career history
500
Total Applications
across all art units

Statute-Specific Performance

§103
81.9%
+41.9% vs TC avg
§102
7.3%
-32.7% vs TC avg
§112
10.6%
-29.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 466 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of invention I, claims 1-12, in the reply filed on 04/10/2026 is acknowledged. Claims 13-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 04/10/2026. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 2 and 8-11 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. The term “approximately” in claim 2 is a relative term which renders the claim indefinite. The term “approximately” is not defined by the claim, the specification does not provide a standard for ascertaining the requisite degree, and one of ordinary skill in the art would not be reasonably apprised of the scope of the invention. The limitation “approximately half of a height of the source drain region” of the claim has been rendered indefinite by the use of the term “approximately”. The term “approximately” in claim 8 is a relative term which renders the claim indefinite. The term “approximately” is not defined by the claim, the specification does not provide a standard for ascertaining the requisite degree, and one of ordinary skill in the art would not be reasonably apprised of the scope of the invention. The limitation “approximately half of a height of the source drain region” of the claim has been rendered indefinite by the use of the term “approximately”. Allowable Subject Matter Claims 1, 3-7 and 12 are allowed. Claims 2 and 8-11 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is a statement of reasons for the indication of allowable subject matter: The prior art of record, Fan (US 2024/0290850), discloses a semiconductor device comprising: a source drain region adjacent to a nanosheet stack; a source drain contact. See Fan, FIG. 14C; paragraphs [0032]-[0033] and [0036]. The prior art of record, Xie (US 2021/0265470), teaches a wrap around source drain contact, the wrap around source drain contact comprises an upper region, a middle region and a lower region, wherein the upper region is above the source drain region, the middle region surrounds an upper portion of an angled vertical side surface of the source drain region, and the lower region surrounds a remaining portion of the angled vertical side surface of the source drain region, wherein a thickness of the wrap around source drain contact in the middle region is greater than a thickness of the wrap around source drain contact in the lower region. See Xie, FIG. 11; paragraph [0076]. The prior art of records, individually or in combination, do not disclose nor teach “the middle region covers an upper horizontal surface of the source drain region” in combination with other limitations as recited in claim 1. The prior art of record, Fan, discloses a semiconductor device comprising: a source drain region adjacent to a nanosheet stack; a source drain contact. The prior art of record, Xie, teaches a wrap around source drain contact, the wrap around source drain contact comprises an upper region, a middle region and a lower region, wherein the upper region is above the source drain region, the middle region surrounds an upper portion of the angled vertical side surface of the source drain region, and the lower region surrounds a remaining portion of the angled vertical side surface of the source drain region, wherein a thickness of the wrap around source drain contact in the middle region is greater than a thickness of the wrap around source drain contact in the lower region. The prior art of records, individually or in combination, do not disclose nor teach “the middle region covers an upper horizontal surface of the source drain region; wherein a thickness of the wrap around source drain contact in the middle region is less than a thickness of the wrap around source drain contact in the lower region” in combination with other limitations as recited in claim 7. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHIH TSUN A CHOU whose telephone number is (408)918-7583. The examiner can normally be reached M-F 8:00-16:00 Arizona Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lynne Gurley can be reached at (571) 272-1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHIH TSUN A CHOU/Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Dec 14, 2023
Application Filed
May 21, 2026
Non-Final Rejection mailed — §112
Jul 07, 2026
Interview Requested
Jul 15, 2026
Examiner Interview Summary
Jul 15, 2026
Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12666615
SEMICONDUCTOR DEVICE
3y 5m to grant Granted Jun 23, 2026
Patent 12653024
SEMICONDUCTOR DEVICE AND METHOD FORMING THE SAME
4y 2m to grant Granted Jun 09, 2026
Patent 12652968
SEMICONDUCTOR DEVICE
3y 6m to grant Granted Jun 09, 2026
Patent 12652809
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
3y 5m to grant Granted Jun 09, 2026
Patent 12648364
ENCASPULATED MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
3y 2m to grant Granted Jun 02, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
94%
With Interview (+17.5%)
2y 5m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 466 resolved cases by this examiner. Grant probability derived from career allowance rate.

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