Prosecution Insights
Last updated: April 19, 2026
Application No. 18/542,996

INTERCONNECT SUBSTRATE, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR APPARATUS

Non-Final OA §102§103
Filed
Dec 18, 2023
Examiner
CHOU, SHIH TSUN A
Art Unit
2811
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Shinko Electric Industries Co. Ltd.
OA Round
1 (Non-Final)
76%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
93%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allow Rate
338 granted / 447 resolved
+7.6% vs TC avg
Strong +17% interview lift
Without
With
+17.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
24 currently pending
Career history
471
Total Applications
across all art units

Statute-Specific Performance

§103
48.9%
+8.9% vs TC avg
§102
23.4%
-16.6% vs TC avg
§112
26.6%
-13.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 447 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim 1 is rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin US (2015/0287688). Regarding claim 1, Lin discloses, in FIG. 2 and in related text, an interconnect substrate comprising: an interconnect layer (201) (see Lin, [0049], [0068]); an insulating layer (208) covering the interconnect layer (see Lin, [0049]); an electrode (207, 212) disposed on an upper surface of the interconnect layer (201) and protruding from an upper surface of the insulating layer (208) (see Lin, [0049], [0073]-[0074], [0092]); and a groove formed in the upper surface of the insulating layer (208) around the electrode (207, 212) (see Lin, FIG. 2: the opening in insulating layer 208 is considered as a groove), wherein the electrode includes: a first portion (207) whose side surface is covered with the insulating layer (208); a second portion (212) whose entire side surface is located outside (away from or above) the insulating layer (208), the second portion being partially located inside the groove (opening in insulating layer 208) and partially protruding above the upper surface of the insulating layer (208) (see Lin, FIG. 2); and a metal layer (216) covering both an upper surface of the second portion and the entire side surface of the second portion (212) (see Lin, FIG. 2, [0049]). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1 and 3-4 are rejected under 35 U.S.C. 103 as being unpatentable over Hsu (US 2009/0020322) in view of Wikipedia (Wikipedia, Solder mask, 20 April 2021) and Koep (US 2014/0328039). Regarding claim 1, Hsu discloses, in FIG. 4E and in related text, an interconnect substrate comprising: an interconnect layer (331, 332) (see FIGS. 3I and 4E); a solder resist layer (36) covering the interconnect layer; an electrode (34, 35) disposed on an upper surface of the interconnect layer (332) and protruding from an upper surface of the solder resist layer (36); and a groove formed in the upper surface of the solder resist layer (36) around the electrode (35), wherein the electrode includes: a first portion (34) whose side surface is covered with the solder resist layer (36); a second portion (35) whose entire side surface is located outside (away from) the solder resist layer (36), the second portion being partially located inside the groove and partially protruding above the upper surface of the solder resist layer; and a solder material layer (37’) covering both an upper surface of the second portion and the entire side surface of the second portion (35) (see Hsu, [0036]-[0042], [0053], [0057]). Hsu does not explicitly disclose the solder resist layer is an insulating layer. Hsu does not explicitly disclose an insulating layer. Wikipedia teaches a solder resist layer is an insulating polymer layer (see Wikipedia, first paragraph). Thus Wikipedia teaches an insulating layer. Hsu and Wikipedia are analogous art because they both are directed to device packaging and one of ordinary skill in the art would have had a reasonable expectation of success to modify Hsu with the features of Wikipedia because they are from the same field of endeavor. It would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to modify Hsu to include an insulating layer, as taught by Wikipedia, to prevent unintended electrical connection and oxidation (see Wikipedia, first paragraph). Hsu does not explicitly disclose the solder material layer being a metal layer. Hsu does not explicitly disclose a metal layer. Koep teaches solder material containing nickel (see Koep, [0029]). Thus Koep teaches a metal layer (a nickel layer). Hsu and Koep are analogous art because they both are directed to device packaging and one of ordinary skill in the art would have had a reasonable expectation of success to modify Hsu with the features of Koep because they are from the same field of endeavor. It would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to modify Hsu to include a metal layer, as taught by Koep, because it is simple substitution of one known element for another (nickel as solder material) to obtain predictable results (for solder bump connection). See MPEP § 2143. Regarding claim 3, Hsu in view of Wikipedia and Koep teaches the interconnect structure of claim 1. Koep teaches wherein the metal layer includes a nickel layer, a nickel alloy layer, a cobalt layer, or a cobalt alloy layer (see discussion on claim 1 above), with the same analogous prior art and field of endeavor statement and the same motivation as provided for in claim 1. Regarding claim 4, Hsu in view of Wikipedia and Koep teaches the interconnect structure of claim 1. Hsu discloses wherein the electrode and the solder material layer constitute an external connection terminal for electrical connection to a semiconductor chip (see Hsu, [0057]). Koep teaches the metal layer (see discussion on claim 1 above), with the same analogous prior art and field of endeavor statement and the same motivation as provided for in claim 1. Claim 5 is rejected under 35 U.S.C. 103 as being unpatentable over Hsu in view of Wikipedia and Koep, and further in view of Rokugawa (US 2016/0005685). Regarding claim 5, Hsu in view of Wikipedia and Koep teaches the interconnect structure of claim 4. Hsu discloses wherein the external connection terminal and the semiconductor chip are electrically connected to each other through solder (see Hsu, [0057]). Hsu does not explicitly disclose a connection terminal of the semiconductor chip; the semiconductor chip mounted on the interconnect substrate. Rokugawa teaches a connection terminal (60b) of the semiconductor chip (60); the semiconductor chip mounted on the interconnect substrate (10) (see Rokugawa, FIGS. 1A-1B, [0036]). Hsu and Rokugawa are analogous art because they both are directed to device packaging and one of ordinary skill in the art would have had a reasonable expectation of success to modify Hsu with the features of Rokugawa because they are from the same field of endeavor. It would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to modify Hsu to include a connection terminal of the semiconductor chip; the semiconductor chip mounted on the interconnect substrate, as taught by Rokugawa, to provide integration of semiconductor elements (see Rokugawa, [0004]). Allowable Subject Matter Claim 2 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: The prior art of records, individually or in combination, do not disclose nor teach “wherein the metal layer fills the groove” in combination with other limitations as recited in claim 2. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHIH TSUN A CHOU whose telephone number is (408)918-7583. The examiner can normally be reached M-F 8:00-16:00 Arizona Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lynne Gurley can be reached at (571) 272-1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHIH TSUN A CHOU/Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Dec 18, 2023
Application Filed
Feb 25, 2026
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604459
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Apr 14, 2026
Patent 12604672
MRAM REFILL DEVICE STRUCTURE
2y 5m to grant Granted Apr 14, 2026
Patent 12598920
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
2y 5m to grant Granted Apr 07, 2026
Patent 12598919
MRAM DEVICE WITH HAMMERHEAD PROFILE
2y 5m to grant Granted Apr 07, 2026
Patent 12593615
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE CONTACT
2y 5m to grant Granted Mar 31, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
76%
Grant Probability
93%
With Interview (+17.1%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 447 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month