DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 10-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Regarding claim 10, the recitation of “performing a process for defining the semiconductor areas” is vague because “the process” is not clearly defined. Such recitation of “the process” renders ambiguity of what is “the process” to be applied. Similar problem exists for “an additional process” recites at lines 10-11.
The dependent claims 11-20 are also rejected because they are, directly or indirectly, depending from the rejected claim 10.
Allowable Subject Matter
Claims 1-9 are allowed.
The following is an examiner’s statement of reasons for allowance:
The prior art of record, taken alone or in combination, fails to teach or fairly suggest a display device comprising: a pixel circuit disposed on a base layer and including a transistor, the transistor including a source electrode, a drain electrode, a gate electrode, and a semiconductor layer; and a light emitting element electrically connected to the pixel circuit, wherein the semiconductor layer includes a low concentration area, a high concentration area, and a slope concentration area between the low concentration area and the high concentration area which are divided based on a concentration of a carrier and are spaced apart from each other in a length direction of the base layer, the low concentration area and a portion of the slope concentration area form a channel area, and form a source area and a drain area including the high concentration area and at least another portion of the slope concentration area, and especially, the semiconductor layer in the slope concentration area satisfies Equation 1: 6.6
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11 [1/(cm3- µm)] where ΔX is a length change amount [µm] in a length direction of the semiconductor layer in the slope concentration area, and ΔY is a concentration change amount [1/(cm3)] of the carrier in the length change amount in the slope concentration area as recited in claim 1. Similar limitations as recited in claim 9 and further limitations of the dependent claims 2-8.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
References: Kwon et al. (US 2025/0166561); Morita (US 12,236,876); Kim (US 12,217,700); Jung et al. (US 2024/0257689); Kim et al. (US 11,935,471); Kusunoki et al. (US 2024/0412687); Kim et al. (US 2024/0062712); Jang et al. (US 2021/0201782) and Bong et al. (US 2023/0360604) are cited because they are related to display apparatus.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Tuyen Kim Vo whose telephone number is (571)270-1657. The examiner can normally be reached Mon-Thurs: 8AM-6:30PM.
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/TUYEN K VO/ Primary Examiner, Art Unit 2876