DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1-7 and 12-18 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Song (KR 20130057738 A)
With respect to claim 1, Song discloses a display panel, comprising: a substrate layer [100]; and a light-emitting layer comprising a first electrode [110], a hole injection layer [121], a first light-emitting unit layer [122], an electron-generating layer [131], a hole-generating layer [132], a second light-emitting unit layer [142], and a second electrode [150] stacked in sequence, the first electrode being disposed on the substrate layer (see Figure 1), the electron-generating layer [131] comprising n-type dopants (see ¶[0029-0030]), and the hole-generating layer [132] comprising p-type dopants (see ¶[0046-0047]); wherein a first direction is perpendicular to the substrate layer and extends from the substrate layer to the light-emitting layer, and in the first direction, the n-type dopants in the electron-generating layer has a plurality of doping concentrations, and the plurality of doping concentrations of the n-type dopants in the electron-generating layer tend to decrease in the first direction (See ¶[0042]); and/or the p-type dopants in the hole-generating layer has a plurality of doping concentrations, and the plurality of doping concentrations of the p-type dopants in the hole-generating layer tend to increase in the first direction.
With respect to claim 2, Song discloses wherein in a case that the plurality of doping concentrations of the n-type dopants in the electron-generating layer tend to decrease in the first direction, the plurality of doping concentrations of the n-type dopants in the electron-generating layer gradually decrease in the first direction; and in a case that the plurality of doping concentrations of the p-type dopants in the hole-generating layer tend to increase in the first direction, the plurality of doping concentrations of the p-type dopants in the hole-generating layer gradually increase in the first direction (See ¶[0031] and ¶[0042]).
With respect to claim 3, Song discloses wherein a rate of change of the plurality of doping concentrations of the n-type dopants in the electron-generating layer gradually decrease in the first direction; and a rate of change of the plurality of doping concentrations of the p-type dopants in the hole-generating layer gradually increase in the first direction (see ¶[0037 and ¶[0042]).
With respect to claim 4, Song discloses wherein an absolute value of the rate of change of the plurality of doping concentrations of the n-type dopants in the electron-generating layer is the same as an absolute value of the rate of change of the plurality of doping concentrations of the p-type dopants in the hole-generating layer (see ¶[0031], ¶[0037] and ¶[0042]).
With respect to claim 5, Song discloses wherein each of the plurality of doping concentrations of the n-type dopants ranges from a first concentration to a second concentration, and a difference between the first concentration and the second concentration ranges from 1 wt % to 19 wt %; and each of the plurality of doping concentrations of the p-type dopants ranges from a third concentration to a fourth concentration, and a difference between the third concentration and the fourth concentration ranges from 1 wt % to 19 wt % (see ¶[0031], ¶[0037] and ¶[0042]).
With respect to claim 6, Song discloses wherein the first concentration ranges from 6 wt % to 20 wt %, and the second concentration ranges from 1 wt % to 5 wt %; and the third concentration ranges from 1 wt % to 5 wt %, and the fourth concentration ranges from 6 wt % to 20 wt % (see ¶[0031], ¶[0035], ¶[0037] and ¶[0042]).
With respect to claim 7, Song discloses wherein the electron-generating layer consists of X layers of electron-generating sub-layers stacked in the first direction, a concentration of n-type dopants in a first electron-generating sub-layer is N1, a concentration of n-type dopants in a second electron-generating sub-layer is N2, and a concentration of n-type dopants in a third electron-generating sub-layer is N3, . . . , and a concentration of n-type dopants in a X-th electron-generating sub-layer is NX; and wherein X is a positive integer greater than or equal to 2, and N1>N2>N3> . . . >NX-1>NX (see ¶[0031], ¶[0037] and ¶[0042]; [131a], [131b], [131c]).
With respect to claim 12, Song discloses a mobile terminal comprising a display panel, wherein the display panel comprises: a substrate layer [100]; a light-emitting layer comprising a first electrode [110], a hole injection layer [121], a first light-emitting unit layer [122], an electron-generating layer [131], a hole-generating layer [132], a second light-emitting unit layer [142], and a second electrode [150] stacked in sequence, the first electrode is disposed on the substrate layer (see Figure 1), the electron-generating layer [131] comprises n-type dopants (see ¶[0029-0030]), and the hole-generating layer [132] comprises p-type dopants (see ¶[0046-0047]); wherein a first direction is perpendicular to the substrate layer and extends from the substrate layer to the light-emitting layer, and in the first direction, the n-type dopants in the electron-generating layer has a plurality of doping concentrations, and the plurality of doping concentrations of the n-type dopants in the electron-generating layer tend to decrease in the first direction (See ¶[0042]); and/or the p-type dopants in the hole-generating layer has a plurality of doping concentrations, and the plurality of doping concentrations of the p-type dopants in the hole-generating layer tend to increase in the first direction.
With respect to claim 13, Song discloses wherein in a case that the plurality of doping concentrations of the n-type dopants in the electron-generating layer tend to decrease in the first direction, the plurality of doping concentrations of the n-type dopants in the electron-generating layer gradually decrease in the first direction; and in a case that the plurality of doping concentrations of the p-type dopants in the hole-generating layer tend to increase in the first direction, the plurality of doping concentrations of the p-type dopants in the hole-generating layer gradually increase in the first direction (See ¶[0031] and ¶[0042]).
With respect to claim 14, Song discloses wherein a rate of change of the plurality of doping concentrations of the n-type dopants in the electron-generating layer gradually decrease in the first direction; and a rate of change of the plurality of doping concentrations of the p-type dopants in the hole-generating layer gradually increase in the first direction (see ¶[0037 and ¶[0042]).
With respect to claim 15, Song discloses wherein an absolute value of the rate of change of the plurality of doping concentrations of the n-type dopants in the electron-generating layer is the same as an absolute value of the rate of change of the plurality of doping concentrations of the p-type dopants in the hole-generating layer (see ¶[0031], ¶[0037] and ¶[0042]).
With respect to claim 16, Song discloses wherein each of the plurality of doping concentrations of the n-type dopants ranges from a first concentration to a second concentration, and a difference between the first concentration and the second concentration ranges from 1 wt % to 19 wt %; and each of the plurality of doping concentrations of the p-type dopants ranges from a third concentration to a fourth concentration, and a difference between the third concentration and the fourth concentration ranges from 1 wt % to 19 wt % (see ¶[0031], ¶[0037] and ¶[0042]).
With respect to claim 17, Song discloses wherein the first concentration ranges from 6 wt % to 20 wt %, and the second concentration ranges from 1 wt % to 5 wt %; and the third concentration ranges from 1 wt % to 5 wt %, and the fourth concentration ranges from 6 wt % to 20 wt % (see ¶[0031], ¶[0035], ¶[0037] and ¶[0042]).
With respect to claim 18, Song discloses wherein the electron-generating layer consists of X layers of electron-generating sub-layers stacked in the first direction, a concentration of n-type dopants in a first electron-generating sub-layer is N1, a concentration of n-type dopants in a second electron-generating sub-layer is N2, and a concentration of n-type dopants in a third electron-generating sub-layer is N3, . . . , and a concentration of n-type dopants in a X-th electron-generating sub-layer is NX; and wherein X is a positive integer greater than or equal to 2, and N1>N2>N3> . . . >NX-1>NX (see ¶[0031], ¶[0037] and ¶[0042]; [131a], [131b], [131c]).
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Claim(s) 8-9 and 19-20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Song in view of Lim et al. (KR 20130025115 A; hereinafter Lim).
With respect to claim 8, Song fails to disclose wherein the hole-generating layer consists of Y layers of hole-generating sub-layers stacked in the first direction, a concentration of p-type dopants in a first hole-generating sub-layer is M1, a concentration of p-type dopants in a second hole-generating sub-layer is M2, a concentration of p-type dopants in a third hole-generating sub-layer is M3, and a concentration of p-type dopants in the hole-generating sub-layer of a Yth layer is MY; and wherein Y is a positive integer greater than or equal to 2, and M1<M2<M3< . . . <MY-1<MY. In the same field of endeavor, Lim teaches wherein the hole-generating layer consists of Y layers of hole-generating sub-layers stacked in the first direction, a concentration of p-type dopants in a first hole-generating sub-layer is M1, a concentration of p-type dopants in a second hole-generating sub-layer is M2, a concentration of p-type dopants in a third hole-generating sub-layer is M3, and a concentration of p-type dopants in the hole-generating sub-layer of a Yth layer is MY; and wherein Y is a positive integer greater than or equal to 2, and M1<M2<M3< . . . <MY-1<MY. (See ¶[0019], ¶[0025] and ¶[0030]). Implementation of sub-layers within the hole generating layer allows for improved charge transfer speeds and reduced driving voltage, and color control (See Lim ¶[0030]). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention.
With respect to claim 9, the combination of Song and Lim discloses wherein the electron-generating layer comprises a first electron-generating sub-layer, a second electron-generating sub-layer, and a third electron-generating sub-layer stacked in the first direction (see Song ¶[0031], ¶[0037] and ¶[0042]; [131a], [131b], [131c]), and the hole-generating layer comprises a first hole-generating sub-layer, a second hole generating sub-layer, and a third hole-generating sub-layer stacked in the first direction; and wherein a concentration of n-type dopants in the first electron-generating sub-layer is the same as a concentration of p-type dopants in the third hole-generating sub-layer, a concentration of n-type dopants in the second electron-generating sub-layer is the same as a concentration of p-type dopants in the second hole-generating sub-layer, and a concentration of n-type dopants in the third electron-generating sub-layer is the same as a concentration of p-type dopants in the first hole-generating sub-layer (see Lim ¶[0019], ¶[0025] and ¶[0030]).
With respect to claim 19, Song fails to disclose wherein the hole-generating layer consists of Y layers of hole-generating sub-layers stacked in the first direction, a concentration of p-type dopants in a first hole-generating sub-layer is M1, a concentration of p-type dopants in a second hole-generating sub-layer is M2, a concentration of p-type dopants in a third hole-generating sub-layer is M3, and a concentration of p-type dopants in the hole-generating sub-layer of a Yth layer is MY; and wherein Y is a positive integer greater than or equal to 2, and M1<M2<M3< . . . <MY-1<MY. In the same field of endeavor, Lim teaches wherein the hole-generating layer consists of Y layers of hole-generating sub-layers stacked in the first direction, a concentration of p-type dopants in a first hole-generating sub-layer is M1, a concentration of p-type dopants in a second hole-generating sub-layer is M2, a concentration of p-type dopants in a third hole-generating sub-layer is M3, and a concentration of p-type dopants in the hole-generating sub-layer of a Yth layer is MY; and wherein Y is a positive integer greater than or equal to 2, and M1<M2<M3< . . . <MY-1<MY (See ¶[0019], ¶[0025] and ¶[0030]). Implementation of sub-layers within the hole generating layer allows for improved charge transfer speeds and reduced driving voltage, and color control (See Lim ¶[0030]). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention.
With respect to claim 20, the combination of Song and Lim discloses wherein the electron-generating layer comprises a first electron-generating sub-layer, a second electron-generating sub-layer, and a third electron-generating sub-layer stacked in the first direction (see Song ¶[0031], ¶[0037] and ¶[0042]; [131a], [131b], [131c]), and the hole-generating layer comprises a first hole-generating sub-layer, a second hole-generating sub-layer, and a third hole-generating sub-layer stacked in the first direction; and wherein a concentration of n-type dopants in the first electron-generating sub-layer is the same as a concentration of p-type dopants in the third hole-generating sub-layer, a concentration of n-type dopants in the second electron-generating sub-layer is the same as a concentration of p-type dopants in the second hole-generating sub-layer, and a concentration of n-type dopants in the third electron-generating sub-layer is the same as a concentration of p-type dopants in the first hole-generating sub-layer (see Lim ¶[0019], ¶[0025] and ¶[0030]).
Claim(s) 10-11 is/are rejected under 35 U.S.C. 103 as being unpatentable over Song in view of Ma et al. (U.S. Publication No. 2018/0159084 A1; hereinafter Ma)
With respect to claim 10, Song fails to disclose wherein in the light-emitting layer, an intermediate layer is disposed between the electron-generating layer and the hole-generating layer, and a material of the intermediate layer has a property of transporting electrons. In the same field of endeavor, Ma teaches wherein in the light-emitting layer, an intermediate layer [52] is disposed between the electron-generating layer [53] and the hole-generating layer [51], and a material of the intermediate layer has a property of transporting electrons (See Figure 2) Implementation of an intermediate layer as taught by Ma within the device of Song improves electron transport performance (see ¶[0029-0030]). Therefore, it would have been obvious to one of ordinary skill in the art at the time of invention that the combination of references would arrive at the claimed invention.
With respect to claim 11, the combination of Song and Ma discloses wherein the material of the intermediate layer comprises at least one of metal compounds, alkaline metals, and inorganic compounds (see Ma ¶[0039]).
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to JONATHAN HAN whose telephone number is (571)270-7546. The examiner can normally be reached 9.00-5.00PM PST.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, STEVEN LOKE can be reached at 571-272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/JONATHAN HAN/Primary Examiner, Art Unit 2818