Prosecution Insights
Last updated: April 19, 2026
Application No. 18/561,231

PLATINUM GROUP METAL CHALCOGENIDE THIN FILM, AND SEMICONDUCTOR MATERIAL PROVIDED WITH THE PLATINUM GROUP METAL CHALCOGENIDE THIN FILM

Non-Final OA §102
Filed
Nov 15, 2023
Examiner
BOOTH, RICHARD A
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
UNIVERSITY INDUSTRY FOUNDATION, YONSEI UNIVERSITY
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
94%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allow Rate
878 granted / 1029 resolved
+17.3% vs TC avg
Moderate +8% lift
Without
With
+8.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
35 currently pending
Career history
1064
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
56.2%
+16.2% vs TC avg
§102
29.9%
-10.1% vs TC avg
§112
7.4%
-32.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1029 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-7 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Zhang et al., US 2021/0055220. Zhang et al. shows the invention as claimed including a thin film 120 formed on a substrate, and comprising a platinum group metal chalcogenide, wherein the platinum group metal chalcogenide comprises iridium disulfide (IrS2) and the thickness of the layer can be between 1nm and 10 nm which anticipates the claimed range of 0.5-500 nanometers (see paragraph 0057). With respect to dependent claim 2, note that Zhang et al. discloses that the thickness of the layer can be between 1nm and 10 nm which anticipates the claimed range of 0.5-200 nanometers (see paragraph 0057). Concerning claim 3 and the thin film formed in an insular shape on the substrate, note that in Zhang et al. the thin film can be grown with a width as small or as large as possible (see paragraph 0057). Particularly a width as small as possible would constitute an island configuration which can be considered an insular shape. With respect to dependent claims 4 and 6-7, note that Zhang et al. discloses a semiconductor material, comprising a substrate (note from paragraph 0057 that the substrate can be composed of sil;icon, a known semiconductor), and the thin film 120 is formed on the substrate. Concerning dependent claim 5, note that Zhang et al. discloses a light receiving element (see from the abstract that light is detected). Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 2025/0254905 discloses the use of a platinum diselenide phase change layer (see paragraph 0018), and US Patent 11,708,633 discloses a metal chalcogenide film including a transition element with a concentration gradient (see abstract). Any inquiry concerning this communication or earlier communications from the examiner should be directed to RICHARD A BOOTH whose telephone number is (571)272-1668. The examiner can normally be reached Monday to Friday, 8:30 to 5:00. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at 571-272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /RICHARD A BOOTH/ Primary Examiner, Art Unit 2812 January 4, 2026
Read full office action

Prosecution Timeline

Nov 15, 2023
Application Filed
Jan 16, 2026
Non-Final Rejection — §102
Apr 07, 2026
Response Filed

Precedent Cases

Applications granted by this same examiner with similar technology

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2y 5m to grant Granted Apr 07, 2026
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Patent 12593443
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Patent 12593454
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
94%
With Interview (+8.4%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 1029 resolved cases by this examiner. Grant probability derived from career allow rate.

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