DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant's election with traverse of claims 1-7 in the reply filed on 6/16/26 is acknowledged. The traversal is on the ground(s) that SEE ELECTION DATED 6/16/26. This is not found persuasive because the consideration (interpretation and weight assignment) and searches of the device and process inventions are not overlapping.
The requirement is still deemed proper and is therefore made FINAL.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1-3 and 5 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Le et al. (WO 2018/057013).
With respect to claim 1, Le et al. teach a qubit element, comprising (see figs. 1-54, particularly figs. 2 and 35 and associated English text, particularly para 85-95):
a quantum well structure 104, 152-1,152-2 of fig. 2, 153, 155 or 156 of fig. 35 within which a quantum well 152-1 is formed along a first direction (z),
an electrode arrangement 110-2, 112-2 adapted to restrict a movement of a charge carrier in the quantum well in and against a second direction (x) and in and against a third direction (y), in order to form a quantum dot, wherein the first direction, the second direction, and the third direction are respectively perpendicular to one another in pairs,
a base layer (the bottom 153 or 155) formed from strained silicon adjacent to the quantum well structure against the first direction.
With respect to claim 2, Le et al. teach an insulation layer of silicon dioxide 130-1 abutting the base layer on a side of the base layer opposite the quantum well structure. See fig. 2 and 35 and associated text.
With respect to claim 3, Le et al. teach the quantum well structure has three layers following one another in the first direction, of which the middle layer 153 is formed from strained silicon, and of which the two remaining layers 155 are respectively formed from silicon and germanium. See fig. 2 and 35 and associated text. See fig. 2 and 35 and associated text and para 85-95.
With respect to claim 5, Le et al. teach comprising a backgate 110-1,112-1 arranged spaced apart from the quantum well structure against the first direction. See fig. 2 and 35 and associated text. See fig. 2 and 35 and associated text.
Allowable Subject Matter
Claims 4, 6, and 7 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Examiner’s Cited References
The cited references generally show the similar or related structure having a quantum well structure between an electrode structure and a base layer having strained silicon as presently claimed by applicant.
Conclusion
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LONG . PHAM
Examiner
Art Unit 2823
/LONG PHAM/Primary Examiner, Art Unit 2897
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