DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Specification
The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The examiner proposes METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR COMPONENT ON A POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112:
The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention.
Claims 1-7 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the enablement requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to enable one skilled in the art to which it pertains, or with which it is most nearly connected, to make and/or use the invention. Claim 1 recites “connecting the silicon layer and the germanium layer using a first laser, wherein for the connecting, laser beams are coupled in through the polycrystalline silicon carbide substrate, and a connection layer including silicon and germanium is produced” and “removing the connection layer using a third laser, wherein for the removing, laser beams are coupled in through the polycrystalline silicon carbide substrate.” The only explanation of this is on page 5 of the specification: “the silicon layer and the germanium layer are connected by means of a first laser, wherein the laser beams are coupled in through the polycrystalline silicon carbide substrate. This leads to a solid-state reaction, wherein a connection layer consisting of silicon and germanium is produced. Connecting takes place, for example, under vacuum with pressures between 1 mbar and 3 mbar. Alternatively, the connecting of the silicon layer and the germanium layer is performed in a protective gas atmosphere with nitrogen or argon, for example at normal pressure or 1 bar. In a subsequent step 120, active regions of the silicon carbide semiconductor component are created on or within the monocrystalline silicon carbide semiconductor component, wherein high-temperature processes such as implantations are performed by means of a second laser having a wavelength of approximately 350 nm and an energy density of 0.5 J/cm2 to 5 J/cm2. As a result, the process temperature remains below a maximum permissible temperature of 1095°C so that the connection layer consisting of silicon and germanium is not affected.”
The general statement of “a solid-state reaction” does not appear sufficient to the examiner to guide those in the art. The examiner searched and did not find another reference disclosing such a method joining silicon and germanium layers/substrates with a solid state reaction. This does not appear to be well defined in the art, and it does not appear that those in the art would know how to carry it out. For example, how would they know when the connection layer is accomplished? Too little guidance is given here.
The remaining claims are rejected based on their dependencies.
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-7 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 1 recites “connecting the silicon layer and the germanium layer using a first laser, wherein for the connecting, laser beams are coupled in through the polycrystalline silicon carbide substrate, and a connection layer including silicon and germanium is produced”. It is not clear what is meant by this. What meant by “connection layer”? Given the lack of clarity in the specification, it leads to uncertainty about the scope of the claims.
The remaining claims are rejected based on their dependencies.
Assessment of the Prior Art
It would appear the claimed invention is not disclosed or obvious over the prior art. Berger, US 2019/0244853 A1, the reference cited in the international opinion, is different in many ways from the claimed method. Individual claimed steps were known, but the overall method appears to be novel and non-obvious.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure and is listed in the attached Notice of References Cited.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to PETER BRADFORD whose telephone number is (571)270-1596. The examiner can normally be reached 10:30-6:30.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jacob Choi can be reached at 469.295.9060. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/PETER BRADFORD/Primary Examiner, Art Unit 2897