Prosecution Insights
Last updated: October 25, 2026
Application No. 18/586,593

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND

Non-Final OA §102
Filed
Feb 26, 2024
Priority
Aug 31, 2021 — JP 2021-142004 +1 more
Examiner
FRASER, STEWART A
Art Unit
1724
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Fujifilm Corporation
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
1175 granted / 1367 resolved
+21.0% vs TC avg
Moderate +14% lift
Without
With
+14.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
24 currently pending
Career history
1398
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
48.2%
+8.2% vs TC avg
§102
22.3%
-17.7% vs TC avg
§112
18.2%
-21.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1367 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This is the initial office action for US Patent Application No. 18/586593 by Miyoshi et al. Claims 1-16 are currently pending and have been fully considered. Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-16 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Nemoto et al. (US 2020/0393755 A1), herein referred to as Nemoto, provided in Applicant’s Information Disclosure Statement filed 5/13/2024. Regarding claims 1, 6-8, 12 and 14-16, Nemoto teaches [0041, 0043, 0064] a radiation-sensitive resin composition comprising a polymer (resin) that is decomposed by the action of an acid and thereby increased in polarity and a compound that generates an acid upon irradiation with actinic rays or radiation. The polymer can have a chemical formula (structure P-5) represented by: PNG media_image1.png 230 318 media_image1.png Greyscale The polymer taught by Nemoto satisfies the chemical structure limitations of resin (A) recited in claim 1. Nemoto further teaches [0041, 0135, 0147] a compound that generates acid that can have chemical formulas (I-1 through I-18) that satisfy the chemical structure limitations of compound (C) recited in claim 1. Chemical formula (I-6) shown below as an example: PNG media_image2.png 136 318 media_image2.png Greyscale Regarding claims 2 and 13, Nemoto teaches chemical formula (I-8) that satisfies the limitations of claim 2: PNG media_image3.png 126 290 media_image3.png Greyscale Regarding claim 3, Nemoto teaches [0041, 0086, 0088] an acid generator that generates an acid stronger than the acid generated from compound (C). Regarding claim 4, Nemoto teaches chemical formula (P-6) the polymer can be configured to have a repeating unit having a group that is decomposed to generate an acid upon irradiation with actinic rays or radiation. Regarding claim 5, Nemoto teaches [0261] chemical formulas (B-1 to B-6) compounds with repeating units that satisfy formula (S-1) recited in claim 5. Regarding claims 9-11, Nemoto teaches [0007, 0037-0040, 0223] a resist pattern-forming method includes applying the radiation-sensitive resin composition directly or indirectly on a substrate to form a resist film. The resist film is then subsequently exposed and developed. The resist pattern-forming method is utilized to form a semiconductor device (electronic device). Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEWART A FRASER whose telephone number is (571)270-5126. The examiner can normally be reached M-F, 7am-4pm, EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Miriam Stagg can be reached at 571-270-5256. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STEWART A FRASER/Primary Examiner, Art Unit 1724
Read full office action

Prosecution Timeline

Feb 26, 2024
Application Filed
Oct 02, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
99%
With Interview (+14.4%)
2y 5m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1367 resolved cases by this examiner. Grant probability derived from career allowance rate.

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