Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1721 1723 1724 1737 1795
This examiner grants 86% of resolved cases
Stewart A. Fraser is an experienced examiner in Tech Center 1700 and Art Unit 1721, with 1363 resolved cases. He maintains an allowance rate of 85.9%, which is a high figure for this tech center. The median days to allowance is 904, providing a benchmark for applicants. The 1363 resolved cases demonstrate a high volume of consistent examination.
The interview lift of 14.5% indicates that personal engagement is a valuable tactic. When added to the 85.9% baseline allowance rate, an interview can be a decisive factor in prosecution. Practitioners should view the 904-day median pendency as the standard timeframe for success. The 14.5% lift suggests that the examiner is receptive to oral arguments, which can complement the 85.9% allowance rate to secure a grant within 904 days.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18578342 | ELECTRONIC DEVICE MANUFACTURING AQUEOUS SOLUTION, METHOD FOR MANUFACTURING RESIST PATTERN AND METHOD FOR MANUFACTURING DEVICE | Non-Final OA | Merck Patent GmbH |
| 18562363 | THICK FILM RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | Non-Final OA | Merck Patent GmbH |
| 18582661 | ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD OF PREPARING LITHOGRAPHIC PRINTING PLATE, AND LITHOGRAPHIC PRINTING METHOD | Non-Final OA | FUJIFILM CORPORATION |
| 18417298 | HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18614445 | EUV LITHOGRAPHY MASK BLANKS, EUV MASKS AND METHODS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18417128 | PELLICLE FOR EUV APPLICATIONS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, LTD. |
| 18360853 | EXTREME ULTRAVIOLET LITHOGRAPHY METHOD AND EUV PHOTOMASK | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18568071 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18403811 | REFLECTION TYPE MASK BLANK AND METHOD FOR MANUFACTURING SAME | Non-Final OA | AGC Inc. |
| 18692007 | SUBSTRATE WITH MULTILAYER REFLECTIVE FILM REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | HOYA CORPORATION |
| 18620810 | PELLICLE FILM, PELLICLE, AND METHOD FOR MEASURING STANDARD DEVIATION OF ORIENTATION ANGLE OF CARBON NANOTUBES INCLUDED IN PELLICLE FILM | Non-Final OA | LINTEC Corporation |
| 18568131 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18407259 | Evacuated Gratings and Methods of Manufacturing | Non-Final OA | DigiLens Inc. |
| 18292027 | POSITIVE RESIST COMPOSITION | Non-Final OA | ZEON CORPORATION |
| 18435588 | Compound Having Unsaturated Double Bond, Composition Comprising The Compound, Polybenzoxazole, And Polybenzoxazole Film For Semiconductor Device | Non-Final OA | Nippon Kayaku Kabushiki Kaisha |
| 18574367 | RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND | Non-Final OA | JSR CORPORATION |
| 18395922 | NOVEL ORGANOTIN SILICATE COMPOUNDS, PREPARATION METHODS THEREOF AND PHOTORESIST COMPOSITION CONTAINING THE SAME | Non-Final OA | INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy