Prosecution Insights
Last updated: September 17, 2026
Application No. 18/606,094

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Non-Final OA §102
Filed
Mar 15, 2024
Priority
Aug 14, 2023 — TW 112130493
Examiner
WARREN, MATTHEW E
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Orient Semiconductor Electronics Limited
OA Round
1 (Non-Final)
88%
Grant Probability
Favorable
1-2
OA Rounds
1m
Est. Remaining
93%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
890 granted / 1015 resolved
+19.7% vs TC avg
Minimal +5% lift
Without
With
+5.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
16 currently pending
Career history
1033
Total Applications
across all art units

Statute-Specific Performance

§101
1.0%
-39.0% vs TC avg
§103
52.3%
+12.3% vs TC avg
§102
35.1%
-4.9% vs TC avg
§112
9.4%
-30.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1015 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-10 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Wang et al. (US Pub. 2020/0294930 A1). In re claim 1, Wang et al. discloses (figs. 1A-2G) a method of manufacturing a semiconductor package, comprising: disposing a first die (fig. 2A; D1) on a carrier (102), wherein the first die has a top surface and a bottom surface opposing to the top surface; forming a plurality of first conductive bumps (AM1, D1d) on the top surface of the first die through a wire bonding process, wherein the first conductive bumps are electrically connected to the first die; forming a molding layer (fig. 1B & 2B; D1e, 110) to cover the first conductive bumps and the first die; grinding the molding layer (fig. 2C; to expose the first conductive bumps; forming a redistribution layer (fig. 2D; 112a) on the molding layer to electrically connect to the first conductive bumps; and removing the carrier (fig. 2E). In re claim 2, Wang et al. discloses (figs. 1A-2G) further comprising: disposing a second die (another D1, right side) on the carrier; forming a plurality of second conductive bumps (fig. 2C; AM1-TS, D1d-TS) on the second die through a wire bonding process, wherein the second conductive bumps are electrically connected to the second die; covering the second conductive bumps and the second die with the molding layer (110); exposing the second conductive bumps from the molding layer (fig. 2C; 110’); and electrically connecting the redistribution layer to the second conductive bumps (fig. 2D). In re claim 3, Wang et al. discloses [0022] the first conductive bumps are formed with one of gold wires, copper wires and alloy wires. In re claim 4, Wang et al. discloses (figs. 1A-2G) the molding layer (110) has a bottom surface that is flush with the bottom surface of the first die (D1). In re claim 5, Wang et al. discloses (figs. 1A-2G) after forming the redistribution layer, disposing a plurality of solder balls (fig. 2D; 114) on the redistribution layer, wherein the solder balls are electrically connected to the redistribution layer. In re claim 6 Wang et al. discloses (figs. 1A-2G) wherein the first die and the second die are disposed side by side on the carrier. In re claim 7, Wang et al. shows (fig. 2D) a semiconductor package, comprising: a first die (D1) having a top surface and a bottom surface opposing to the top surface; a plurality of first bonding pads (D1b) disposed on the top surface of the first die; a plurality of first conductive bumps (AM1, D1d) disposed on the first bonding pads respectively, wherein the first conductive bumps are electrically connected to the first die; a molding layer (110’) covering the top surface of the first die and exposing the first conductive bumps; and a redistribution layer (112a) disposed on the molding layer to electrically connect to the first conductive bumps. In re claim 8, Wang et al. shows (fig. 2D) a second die (another of the D1, right sided) having opposing top and bottom surfaces; a plurality of second bonding pads (D1b) disposed on the top surface of the second die; and a plurality of second conductive bumps (D1d) disposed on the second bonding pads respectively, wherein the second conductive bumps are electrically connected to the second die; wherein the molding layer (110’) further covers the top surface of the second die and exposes the second conductive bumps; and the redistribution layer (112a) is further electrically connected to the second conductive bumps. In re claim 9, Wang et al. shows (fig. 2D) wherein the molding layer (110’)has a bottom surface that is flush with the bottom surface of the first die. In re claim 10, Wang et al. shows (fig. 2D)a plurality of solder balls (114) disposed on the redistribution layer, the solder balls being electrically connected to the redistribution layer. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Hung (US 8,928,117 B1), Fujishima (US Pub. 2023/0207434 A1), Kim (US Pub. 2023/0133322 A1), Lee (US Pub. 2022/0415838 A1), Chang (US Pub. 2019/0378803 A1), Lee (WO-2017095094 A1), Lin (DE-102012109484 A1), and CN-105514099-A) also disclose various elements of the claims. Each of these references disclose most of the elements of the claims and would also serve as base references in 35 USC 102 or 103 Rejections. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MATTHEW E WARREN whose telephone number is (571)272-1737. The examiner can normally be reached Mon-Fri 10am - 6pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at 571-272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MATTHEW E WARREN/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Mar 15, 2024
Application Filed
Aug 18, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE INTERFACE LAYER AND METHODS FOR FORMING THE SAME
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3y 3m to grant Granted Aug 25, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
88%
Grant Probability
93%
With Interview (+5.0%)
2y 7m (~1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1015 resolved cases by this examiner. Grant probability derived from career allowance rate.

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