DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Arguments
Applicant’s arguments with respect to claim(s) rejected have been considered but are moot because the new ground of rejection does not rely on Lin et al. 20230067988 applied in the prior rejection of record for any teaching or matter specifically challenged in the argument.
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 16-20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin et al. 20230067988.
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Regarding claim 16, figs. 6-7 of Lin discloses a semiconductor device, comprising:
a substrate 202;
a fin base (ML in fig. 4) disposed on the substrate;
a nanostructured channel structure, disposed on the fin base, comprising:
a germanium (Ge)-free region 208,
a Ge-doped region 222 surrounding the Ge-free region, wherein the Ge-doped region 222 has a graded germanium concentration profile (fig. 7 – 402 and par [0028]) such that an outer portion (sidewall portion 222B) of the Ge-doped region has a first Ge concentration and a second portion of the Ge-doped region (middle portion of 222A) in contact with the Ge-free region has a second Ge concentration less than the first Ge concentration;
a capping layer 220 surrounding wrapped around the Ge-doped region; and
a gate structure (203b which a gate to block/minimize Ge from leaving 222 - portions of the Ge-doped layer 222 may remain on the sidewalls of the fins 203 (i.e., the base fins 203b) 203b acts a gate to block Ge from leaving) surrounding the nanostructured channel structure.
Regarding claim 17, par [0025] of Lin discloses wherein the capping comprises a silicon germanium (SiGe) layer.
Regarding claim 18, Lin discloses wherein the Ge-free region 208 comprises a Ge-free silicon region (isolation features 208 include silicon oxide which has Ge-free silicon region as SiO2 has Si).
Regarding claim 19, Lin necessary discloses wherein the Ge concentration in the Ge doped Ge-doped region is lower than a Ge concentration in the capping layer (as Ge is diffused from the capping layer).
Regarding claim 20, fig. 6 of Lin discloses wherein the Ge doped region capping layer is in contact with the gate structure.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
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/VONGSAVANH SENGDARA/Primary Examiner, Art Unit 2893
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