Prosecution Insights
Last updated: August 17, 2026
Application No. 18/614,414

POWER/THERMAL VIA FOR THREE-DIMENSIONAL (3D) CHIP STACKING

Non-Final OA §102§103
Filed
Mar 22, 2024
Examiner
TOBERGTE, NICHOLAS J
Art Unit
Tech Center
Assignee
Qualcomm Incorporated
OA Round
1 (Non-Final)
95%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 95% — above average
95%
Career Allowance Rate
853 granted / 902 resolved
+34.6% vs TC avg
Minimal +2% lift
Without
With
+1.9%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 8m
Avg Prosecution
21 currently pending
Career history
935
Total Applications
across all art units

Statute-Specific Performance

§101
1.9%
-38.1% vs TC avg
§103
40.4%
+0.4% vs TC avg
§102
28.6%
-11.4% vs TC avg
§112
12.2%
-27.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 902 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-3, 6, 8-14, 16, 18-20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Hu et al US 2023/0335468. Pertaining to claims 1, 11 and 12, Hu teaches a three-dimensional (3D) stacked chip/method, comprising: a first die T1 having a front-side surface and a backside surface, opposite the front-side surface, the backside surface on a front-side surface of a first redistribution layer (RDL) 250 see Figure 5C and [0052]; a second die T2 having a front-side surface on the front-side surface of the first die and a backside surface being distal from the first RDL; and a via 230 extending from the backside surface of the second die to a back-end-of-line (BEOL) layer of the second die. See Figure 3D marked up below PNG media_image1.png 614 832 media_image1.png Greyscale Pertaining to claims 2 and 13, Hu teaches the 3D stacked chip of claims 1 and 12, further comprising a second RDL 250 see Figure 3D marked up above having a front-side surface on the backside surface of the second die, the second RDL being distal from the first RDL, in which the via 230 is directly coupled to the second RDL see Figure 3D marked up above. Pertaining to claims 3 and 14, Hu teaches the 3D stacked chip of claims 1 and 12, in which the second die comprises a substrate 210 having an active layer (layer in which devices 212 are placed) coupled to the BEOL layer of the second die and distal from the backside surface of the second die, in which the via 230 extends through the substrate 210 and the active layer to the BEOL layer of the second die see Figure 3D. Pertaining to claims 6 and 16, Hu teaches the 3D stacked chip of claims 3 and 14, further comprising a second RDL 250 see Figure 3D marked up above on the backside surface of the second die T2, in which the via 230 is a power via [0036] that extends from the second RDL through the substrate 210 and the active layer (layer in which devices 212 are placed) to the BEOL layer of the second die. See Figure 3D marked up above. Pertaining to claims 8 and 18, Hu teaches the 3D stacked chip of claims 1 and 11, further comprising a printed circuit board coupled to the first die through package bumps. 44 = Figure 3C, see also Figures 7. 42 is a circuit board [0058] Pertaining to claims 9 and 19, Hu teaches the 3D stacked chip of claims 1 and 11, in which the front-side surface of the first die is directly bonded to the front-side surface of the second die to couple the BEOL layer of the second die to a BEOL layer of the first die. Direct bonding is illustrated in Figure 3D as marked up above and denoted by ‘IF’ [0037] Pertaining to claims 10 and 20, Hu teaches the 3D stacked chip of claims 1 and 11, further comprising a package substrate 42 coupled to a backside surface of a second RDL on the backside surface of the second die 44 = Figure 3C. 42 can also be a package substrate [0058] Figure 7 Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 4, 5, 7, 15 and 17 is/are rejected under 35 U.S.C. 103 as being unpatentable over Hu as applied to claims 3 and 14 above, and further in view of Katkar et al US 2016/0284672 and further in view of Matayabas Jr et al US 2005/0041406. Pertaining to claims 4, 5, 7, 15 and 17, Hu teaches the device/method of claims 1, 3, 11 and 14, but is silent regarding a thermal plate, lead, thermal interface material and a thermal via. Matayabas teaches a device/method further comprising: forming a thermal plate 105 on the backside surface of the die, forming a thermal lead 106 coupled to the thermal plate. thermal interface material 104 on the backside surface of the die 103 See Figure 3 It would have been obvious to one of ordinary skill in the art at the time the invention was filed to incorporate the teachings of Matayabs into the method of Hu by adding the thermal layers as claimed above. The ordinary artisan would have been motivated to modify Hu in the manner set forth above for at least the purpose of extracting heat from the chip in order to prevent device failure. Matayabas fails to teach a thermal via. Katkar teaches a thermal via 118 that extends from the thermal interface material/plate 42/43 and through the substrate IC Die 10-1. It would have been obvious to one of ordinary skill in the art at the time the invention was filed to incorporate the teachings of Katkar into the method of Hu in view of Matayabas by adding thermal vias through the chip/substrate. The ordinary artisan would have been motivated to modify Hu/Matayabas in the manner set forth above for at least the purpose of improving heat dissipation through the device, the via acting as a means of extracting heat from the opposing side and interior structures. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to NICHOLAS J TOBERGTE whose telephone number is (571)272-6458. The examiner can normally be reached M-F 7:30-4:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at (571) 272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /NICHOLAS J TOBERGTE/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Mar 22, 2024
Application Filed
Aug 04, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12707740
SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
2y 10m to grant Granted Aug 11, 2026
Patent 12699300
SEMICONDUCTOR DEVICES
3y 5m to grant Granted Aug 04, 2026
Patent 12702033
ELECTRONIC DEVICE
3y 0m to grant Granted Aug 04, 2026
Patent 12690461
STRESS-REDUCING DIELECTRIC-TO-METAL ADHESION ARCHITECTURE FOR ELECTRONIC PACKAGES
4y 0m to grant Granted Jul 21, 2026
Patent 12690463
SEMICONDUCTOR PACKAGE
3y 4m to grant Granted Jul 21, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
95%
Grant Probability
96%
With Interview (+1.9%)
1y 8m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 902 resolved cases by this examiner. Grant probability derived from career allowance rate.

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