Prosecution Insights
Last updated: October 02, 2026
Application No. 18/614,774

NONVOLATILE MEMORY WITH FAST PROGRAM VOLTAGE RAMP DOWN

Final Rejection §112
Filed
Mar 25, 2024
Examiner
RADKE, JAY W
Art Unit
2827
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
SanDisk Technologies Inc.
OA Round
3 (Final)
86%
Grant Probability
Favorable
4-5
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
732 granted / 852 resolved
+17.9% vs TC avg
Moderate +8% lift
Without
With
+8.5%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 0m
Avg Prosecution
15 currently pending
Career history
870
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
41.5%
+1.5% vs TC avg
§102
23.6%
-16.4% vs TC avg
§112
26.0%
-14.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 852 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Claims 18-20 objected to because of the following informalities: Regarding claim 18: To make the claim more definite Examiner suggests amending as follows (claims 19-20 depend on claim 18): Claim 18: A storage system comprising: a plurality of nonvolatile memory cells arranged in NAND strings; and means for programming the plurality of nonvolatile memory cells by applying a plurality of program pulses at a plurality of corresponding program voltages on control gates of the plurality of nonvolatile memory cells, a first subset of the plurality of program pulses ending in a ramp-down from its corresponding program voltage to a post-pulse voltage and a second subset of the plurality of program pulses each ending in a fast ramp-down from its corresponding program voltage to an offset target voltage that is offset from the post-pulse voltage by a negative kick voltage with the magnitude of the negative kick voltage for a program pulse of the second subset increasing as the corresponding program voltage of the program pulse of the second subset increases from pulse to pulse. Appropriate correction is required. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 12-14 and 16-17 rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 12: The phrase “corresponding program voltage of corresponding program pules” is indefinite since it is not definite as to whether “a plurality of corresponding program voltages” is intended to be an antecedent basis for “corresponding program voltage”, and if “a plurality of program pules” is intended to be antecedent basis for “corresponding program pules” since there is not an article used before each noun. Claims 13, 14, 16, and 17 depend on claim 12. Examiner suggests amending the claim as follows: Claim 12: A method of programming a plurality of nonvolatile memory cells, comprising: applying a plurality of program pulses at a plurality of corresponding program voltages on control gates of the plurality of nonvolatile memory cells, each program pulse ending in a ramp-down from its corresponding program voltage; for each of two or more of the plurality of program pulses, ramping-down from its [[the]] corresponding program voltage to a target voltage that is offset from a post-pulse voltage by a negative kick voltage; and increasing the magnitude of the negative kick voltage for the two or more of the plurality of program pulses according to at least one corresponding program voltage of the two or more program pulses. Response to Arguments Applicant’s arguments with respect to the pending claims have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to JAY W RADKE whose telephone number is (571)270-1622. The examiner can normally be reached M-F 9-6 EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Amir Zarabian can be reached at 272-1852. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. JAY W. RADKE Primary Examiner Art Unit 2827 /JAY W. RADKE/Primary Examiner, Art Unit 2827
Read full office action

Prosecution Timeline

Show 1 earlier event
Sep 10, 2025
Non-Final Rejection mailed — §112
Dec 09, 2025
Response Filed
Mar 27, 2026
Non-Final Rejection mailed — §112
Jun 01, 2026
Interview Requested
Jun 09, 2026
Applicant Interview (Telephonic)
Jun 15, 2026
Response Filed
Jun 27, 2026
Examiner Interview Summary
Aug 28, 2026
Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12748691
MEMORY DEVICE AND OPERATION THEREOF
2y 2m to grant Granted Sep 29, 2026
Patent 12744084
METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PARTICULAR A PHASE-CHANGE MEMORY DEVICE, AND MULTI-LEVEL NON-VOLATILE MEMORY DEVICE
2y 4m to grant Granted Sep 22, 2026
Patent 12744095
MEMORY DEVICE AND OPERATION METHOD THEREOF
2y 2m to grant Granted Sep 22, 2026
Patent 12738309
ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE
1y 10m to grant Granted Sep 15, 2026
Patent 12725655
REDUNDANCY AND MAJORITY VOTING IN A KEY-VALUE DATA STORAGE SYSTEM USING CONTENT ADDRESSABLE MEMORY
1y 10m to grant Granted Sep 01, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

4-5
Expected OA Rounds
86%
Grant Probability
94%
With Interview (+8.5%)
2y 0m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 852 resolved cases by this examiner. Grant probability derived from career allowance rate.

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