Prosecution Insights
Last updated: April 19, 2026
Application No. 18/615,192

CARBON HARD MASK, FILM FORMING APPARATUS, AND FILM FORMING METHOD

Non-Final OA §103
Filed
Apr 04, 2024
Examiner
AHMED, SHAMIM
Art Unit
1713
Tech Center
1700 — Chemical & Materials Engineering
Assignee
National University Corporation Tokai National Higher Education And Research System
OA Round
1 (Non-Final)
78%
Grant Probability
Favorable
1-2
OA Rounds
2y 10m
To Grant
99%
With Interview

Examiner Intelligence

Grants 78% — above average
78%
Career Allow Rate
938 granted / 1197 resolved
+13.4% vs TC avg
Strong +22% interview lift
Without
With
+22.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 10m
Avg Prosecution
48 currently pending
Career history
1245
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
54.4%
+14.4% vs TC avg
§102
13.5%
-26.5% vs TC avg
§112
18.3%
-21.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1197 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Specification The disclosure is objected to because of the following informalities: At the first page, in the preliminary amendment to the specification of dated 3/25/2024, the continuing date needs to be updated, such as the application No. 17/415,104 is now US patent 11,993,849. Appropriate correction is required. The abstract of the disclosure is objected to because at the end of the abstract, there is a phrase “[Representative Figure] Fig.7” needs to be deleted from the abstract. A corrected abstract of the disclosure is required and must be presented on a separate sheet, apart from any other text. See MPEP § 608.01(b). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 1 is/are rejected under 35 U.S.C. 103 as being unpatentable over Won et al (US 212/0276743) in view of Ito et al (US 2015/0030792). Regarding claim 1, Won et al disclose a hard mask layer including a diamond-like carbon, etching the hard mask layer to form a hard mask layer pattern, and etching the insulation layer to form an insulation layer pattern using the hard mask layer pattern as an etching mask ([0011]; Figures 6-9), wherein the hard mask layer (220) is laminated on an etching target film (210) [0076]. Won et al also disclose that the carbon-containing hard mask 220 layer is formed by a deposition process using the ICP deposition apparatus illustrated in FIG. 1, for example, by an ICP-PECVD process. A process gas for generating a plasma may include helium gas or argon gas. A reactive gas that may be activated by a collision with the plasma to form the hard mask layer 220 on the insulation layer 210 may include a hydrocarbon compound gas including, e.g., C.sub.3H.sub.6, C.sub.4H.sub.8 or C.sub.6H.sub.12 [0079]. Unlike the instant invention, Won et al fail to disclose the deposited hard mask layer having a concentration ratio of methylene group (CH2) and a methyl group (CH3) satisfies the claimed equation as recited in claim 1. However, Ito et al disclose a hydrocarbon film is vapor-deposited on the surface of a base material, and includes two layers of a high CH.sub.2 layer having a ratio of CH.sub.2 per the total of CH, CH.sub.2 and CH.sub.3 of not less than 40% [0015]; and aforesaid teaching appears to overlaps the claimed range as expressed in the equation 1. Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to employ Ito et al's teaching of depositing the hydrocarbon layer with the configuration of a carbon film that contain more CH2 than CH3 into the teaching of Won et al for achieving a hard mask layer suggested by Ito et al and additionally, such better etching selectivity than amorphous carbon layer as required in the Won et al ([0076] in Won et al). Conclusion The prior art made of record, listed in the PTO-892 and not relied upon is considered pertinent to applicant's disclosure. Osawa et al (US 4913,994) disclose an amorphous material comprising hydrogen and carbon atoms, said carbon atoms constituting methyl group and methylene group in a ratio of the former to the latter being 0.5:1 to 3:1 (col.8, lines 7-9). Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHAMIM AHMED whose telephone number is (571)272-1457. The examiner can normally be reached M-TH (8-5:30pm). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Joshua Allen can be reached at 571-270-3176. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. SHAMIM AHMED Primary Examiner Art Unit 1713 /SHAMIM AHMED/ Primary Examiner, Art Unit 1713
Read full office action

Prosecution Timeline

Apr 04, 2024
Application Filed
Feb 06, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603254
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
2y 5m to grant Granted Apr 14, 2026
Patent 12604689
BRACING STRUCTURE, SEMICONDUCTOR DEVICE WITH THE SAME, AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Apr 14, 2026
Patent 12591174
MICROLITHOGRAPHIC FABRICATION OF STRUCTURES
2y 5m to grant Granted Mar 31, 2026
Patent 12588475
HIGH SELECTIVITY DOPED HARDMASK FILMS
2y 5m to grant Granted Mar 24, 2026
Patent 12580154
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
78%
Grant Probability
99%
With Interview (+22.1%)
2y 10m
Median Time to Grant
Low
PTA Risk
Based on 1197 resolved cases by this examiner. Grant probability derived from career allow rate.

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