Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1713 1792
This examiner grants 78% of resolved cases
Shamim Ahmed is a patent examiner in Tech Center 1700, specifically operating within Art Unit 1713. This examiner has managed a total of 1218 resolved cases. The data shows an allowance rate of 78.4 percent for these applications. This rate indicates the frequency of patent grants for cases reaching a final resolution with this examiner.
Practitioners should note the impact of examiner interviews on prosecution outcomes. The interview lift is 22.2 percent, suggesting that direct communication with the examiner correlates with an increased probability of allowance. This lift is a metric for developing a strategy when facing initial rejections or technical hurdles in Art Unit 1713.
The timeline for reaching a final resolution is also a factor. The median days to allowance for this examiner is 1001. This duration provides a baseline for setting expectations regarding the length of the patent prosecution process. Managing 1218 resolved cases demonstrates a history of examiner actions and decisions within the 1700 Tech Center.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18924620 | POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18924443 | METHOD OF PROCESSING SUBSTRATE USING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17875458 | COMPOSITIONS AND METHODS OF USE THEREOF | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18857322 | ABRASIVE GRAINS AND METHOD FOR SELECTING SAME, POLISHING LIQUID, MULTI-LIQUID TYPE POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | Non-Final OA | Resonac Corporation |
| 18730007 | COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL | Non-Final OA | BASF SE |
| 18939889 | PLASMA ASSISTED DEPOSITION AND ETCHING METHODS, AND RELATED PROCESSING CHAMBERS, SYSTEMS, AND APPARATUS | Non-Final OA | Applied Materials, Inc. |
| 18925805 | DIRECTIONAL ANGLED ETCH FOR HARDMASK OPENING AND LWR IMPROVEMENT | Non-Final OA | Applied Materials, Inc. |
| 18925695 | Subtractive Metal flow with Tip-to-Tip Critical Dimension Reduction | Non-Final OA | Applied Materials, Inc. |
| 19062585 | ETCHING METHOD, PRECOAT METHOD, AND ETCHING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18918152 | ETCHING METHOD | Non-Final OA | Tokyo Electron Limited |
| 18924422 | PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18924413 | PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18820797 | TITANIUM OXIDE-BASED CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR HEAVILY-DOPED BORON SILICON FILMS | Non-Final OA | ENTEGRIS, INC. |
| 18202007 | ETCHANT COMPOSITION AND METHOD | Final Rejection | ENTEGRIS, INC. |
| 18848283 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME | Final Rejection | FUJIMI INCORPORATED |
| 18810102 | POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION, POST-CHEMICAL MECHANICAL POLISHING AND CLEANING TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | FUJIMI INCORPORATED |
| 17568827 | POLISHING COMPOSITION, METHOD FOR MANUFACTURING POLISHING COMPOSITION, AND POLISHING METHOD | Final Rejection | FUJIMI INCORPORATED |
| 18715108 | POLISHING SLURRY COMPOSITION | Final Rejection | KCTECH CO.,LTD. |
| 18088607 | SLURRY COMPOSITION FOR METAL FILM FOR CONTACT PROCESS | Final Rejection | KCTECH CO., LTD. |
| 18956558 | SUBSTRATE PROCESSING METHOD, MANUFACTURING METHOD, AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | SEMES CO., LTD. |
| 18980788 | METHOD OF ETCHING METAL OXIDE LAYER BY USING ATOMIC LAYER ETCHING | Non-Final OA | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS |
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