Tech Center 1700 • Art Units: 1713 1792
This examiner grants 78% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18709461 | ETCHANT AND METHOD FOR SELECTIVELY ETCHING TITANIUM DIOXIDE | Final Rejection | Microsoft Technology Licensing, LLC |
| 18779953 | ENDPOINT DETECTION IN LOW OPEN AREA AND/OR HIGH ASPECT RATIO ETCH APPLICATIONS | Non-Final OA | Applied Materials, Inc. |
| 18631989 | METHOD FOR ETCHING RUTHENIUM | Non-Final OA | Applied Materials, Inc. |
| 18536370 | MANUFACTURING METHOD OF THE FUNCTIONAL MEMBRANE AND THE FUNCTIONAL MEMBRANE | Non-Final OA | Konica Minolta, Inc. |
| 18820797 | TITANIUM OXIDE-BASED CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR HEAVILY-DOPED BORON SILICON FILMS | Non-Final OA | ENTEGRIS, INC. |
| 18234960 | ETCHING PROCESSING APPARATUS AND ETCHING PROCESSING METHOD | Final Rejection | RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
| 18424262 | SELECTIVE ETCHING IN SEMICONDUCTOR DEVICES | Non-Final OA | Tokyo Electron Limited |
| 18376050 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18615192 | CARBON HARD MASK, FILM FORMING APPARATUS, AND FILM FORMING METHOD | Non-Final OA | National University Corporation Tokai National Higher Education and Research System |
| 18394206 | SILICON ETCHING SOLUTION, METHOD OF TREATING SILICON SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | TOKUYAMA CORPORATION |
| 18235120 | ETCHING SOLUTION, METHOD OF MANUFACTURING SILICON DEVICE AND METHOD OF TREATING SUBSTRATE USING THE ETCHING SOLUTION | Final Rejection | TOKUYAMA CORPORATION |
| 18848283 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME | Non-Final OA | FUJIMI INCORPORATED |
| 18820001 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | FUJIMI INCORPORATED |
| 18543206 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | Non-Final OA | FUJIMI INCORPORATED |
| 18278467 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME | Final Rejection | FUJIMI INCORPORATED |
| 18275321 | POLISHING COMPOSITION | Final Rejection | FUJIMI INCORPORATED |
| 18223137 | POLISHING COMPOSITION, POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIMI INCORPORATED |
| 18283083 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENTS | Non-Final OA | MITSUBISHI GAS CHEMICAL COMPANY, INC. |
| 18375009 | Method of Plasma Etching | Non-Final OA | SPTS Technologies Limited |
| 18088607 | SLURRY COMPOSITION FOR METAL FILM FOR CONTACT PROCESS | Non-Final OA | KCTECH CO., LTD. |
| 18255600 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESSING,METHOD FOR PREPARING POLISHING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT TO WHICH POLISHING COMPOSITION IS APPLIED | Non-Final OA | SK enpulse Co., Ltd. |
| 18255958 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESSING,METHOD FOR PREPARING POLISHING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT TO WHICH POLISHING COMPOSITION IS APPLIED | Final Rejection | SKC ENPULSE CO., LTD. |
| 17435927 | SILICON NITRIDE ETCHING LIQUID COMPOSITION | Non-Final OA | Kanto Kagaku Kabushiki Kaisha |
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