DETAILED ACTION
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 03/27/24 was filed after the mailing date of the application. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1, 10, 11, 20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Yamamoto, U.S. Pub. No. 2014/0284754.
Regarding claim 1, Yamamoto discloses a semiconductor circuit device comprising:
a substrate;
a buried layer (barrier) disposed on one side of the substrate;
a well including a semiconductor region disposed on one side of the buried layer (Fig. 11), and
a Schottky diode portion (AD1-AD4) disposed on one side of the well;
wherein the Schottky diode AD1 portion comprises an anode A4, a guard ring 24, A53 (Fig. 19) electrically connected with the anode, and a poly field plate (metal plate, [0235]) electrically connected with the anode and the guard ring, and
the guard ring comprises at least one slit A18, A48 (Fig. 19) configured to block a flow of current.
Regarding claim 11, Yamamoto discloses a Schottky diode portion disposed on one side of a well, comprising:
a Schottky diode portion (AD1-AD4) disposed on one side of the well;
wherein the Schottky diode AD1 portion comprises an anode A4, a guard ring 24, A53 (Fig. 19) electrically connected with the anode, and a poly field plate (metal plate, [0235]) electrically connected with the anode and the guard ring, and
the guard ring comprises at least one slit A18, A48 (Fig. 19) configured to block a flow of current.
Regarding claims 10, 20, Yamamoto discloses wherein the Schottky diode A41, AD11-AD44 ([0002], [0245]-[0293]):
a cathode 88 disposed to surround the anode 83, the guard ring A53 and poly field plate, and
an insulator configured to electrically separate the anode and cathode, and
wherein the insulator comprises a STI (the well in the substrate).
Allowable Subject Matter
Claims 2-9, 12-19 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims, since the prior made of record and considered pertinent to the applicant’s disclosure does not teach or suggest the claimed limitations having the limitations of claim 1 wherein the slit is formed to penetrate at least one region of the guard ring.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to THAO P LE whose telephone number is (571)272-1785. The examiner can normally be reached on Monday-Friday 9AM-6PM.
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/THAO P LE/Primary Examiner, Art Unit 2818