Prosecution Insights
Last updated: August 17, 2026
Application No. 18/618,951

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Non-Final OA §112
Filed
Mar 27, 2024
Priority
Dec 27, 2023 — RE 10-2023-0192618
Examiner
CHOU, SHIH TSUN A
Art Unit
Tech Center
Assignee
SK hynix Inc.
OA Round
1 (Non-Final)
77%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
364 granted / 473 resolved
+17.0% vs TC avg
Strong +17% interview lift
Without
With
+16.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
34 currently pending
Career history
502
Total Applications
across all art units

Statute-Specific Performance

§103
51.2%
+11.2% vs TC avg
§102
21.7%
-18.3% vs TC avg
§112
26.6%
-13.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 473 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of invention I, species I, corresponding to claims 1-4 and 9-14, in the reply filed on 06/30/2026 is acknowledged. Claims 5-8 and 15-38 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to nonelected invention and species, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 06/30/2026. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 2 and 13-14 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 2 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being incomplete for omitting essential structural cooperative relationships of elements, such omission amounting to a gap between the necessary structural connections. See MPEP § 2172.01. The omitted structural cooperative relationships are between the first direction and a third direction. The term “substantially” in claim 2 is a relative term which renders the claim indefinite. The term “substantially” is not defined by the claim, the specification does not provide a standard for ascertaining the requisite degree, and one of ordinary skill in the art would not be reasonably apprised of the scope of the invention. The limitation of the claims “at the substantially same level as the first insulating layers” has been rendered indefinite by use of the term “substantially”. Claim 13 recites the limitation "the third direction" in line 3. There is insufficient antecedent basis for this limitation in the claim. Claim 14 recites the limitation "the third direction" in line 3. There is insufficient antecedent basis for this limitation in the claim. Allowable Subject Matter Claims 1, 3-4 and 9-12 are allowed. Claims 2 and 13-14 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is a statement of reasons for the indication of allowable subject matter: The prior art of record, Han (US 2021/0257407), discloses a semiconductor device comprising: a stack structure including first access lines and first insulating layers that are alternately stacked, the stack structure extending in a first direction; an electrode pillar extending through the stack structure; second air gaps positioned to correspond to the first insulating layers and surrounding the electrode pillar. See Han, FIGS. 1-2 and 10; paragraphs [0033]-[0037] and [0082]-[0084]. The prior art of records, individually or in combination, do not disclose nor teach “first air gaps positioned to correspond to the first insulating layers, the first air gaps each extending in the first direction along a sidewall of the stack structure” in combination with other limitations as recited in claim 1. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHIH TSUN A CHOU whose telephone number is (408)918-7583. The examiner can normally be reached M-F 8:00-16:00 Arizona Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lynne Gurley can be reached at (571) 272-1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHIH TSUN A CHOU/Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Mar 27, 2024
Application Filed
Jul 16, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12707901
BOTTOM ELECTRODE STRUCTURE IN MEMORY DEVICE
3y 4m to grant Granted Aug 11, 2026
Patent 12701924
MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
3y 8m to grant Granted Aug 04, 2026
Patent 12701853
SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK
3y 2m to grant Granted Aug 04, 2026
Patent 12696459
BACKSIDE MRAM WITH FRONTSIDE DEVICES
3y 10m to grant Granted Jul 28, 2026
Patent 12666615
SEMICONDUCTOR DEVICE
3y 5m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
77%
Grant Probability
94%
With Interview (+16.7%)
2y 5m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 473 resolved cases by this examiner. Grant probability derived from career allowance rate.

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