DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin (US 2021/0028097.)
In regard to claim 1, in fig. 5, Lin discloses a method of fabricating semiconductor package device, comprising:
providing a semiconductor chip, or die, 102 (para [0015]) including a first chip pad and a second chip pad 114 (para [0015]);
forming a first redistribution pattern (not numbered) in direct contact with the first chip pad; and
forming a second redistribution pattern 406 (the element formed between the first redistribution element) in direct contact with the second chip pad;
wherein the first redistribution pattern includes a first via part, wherein the second redistribution pattern includes a second via part (para [0016]), and wherein a length of the second via part is greater than a length of the first via part.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claim(s) 1-4, 7-9, 16, and 18 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by HUANG (US 2022/0020674, hereinafter, Huang.)
In regard to claims 1 and 7, in fig. 7, for example, Huang discloses a method of fabricating semiconductor package device 4, comprising:
providing a semiconductor chip 42 including a first chip pad and a second chip pad 44 (para [0056]);
forming a first redistribution pattern 246 (para [0060]) in direct contact with the first chip pad; and
forming a second redistribution pattern 145 in direct contact with the second chip pad; wherein the first redistribution pattern includes a first via part, wherein the second redistribution pattern includes a second via part, and wherein a length of the second via part is greater than a length of the first via part.
Regarding claim 7, Huang further shows the etching and forming the redistribution layer by patterning the dielectric layers. Figs. 11-21.
Regarding claims 2 and 16, wherein the first redistribution pattern further includes a first via pad part that vertically overlaps the first via part, wherein the second redistribution pattern further includes a second via pad part that vertically overlaps the second via part, and
wherein the first via pad part and the second via pad part are located at different levels. Fig. 7.
Regarding claim 3, Lin further comprising forming a third redistribution pattern on the first redistribution pattern, wherein the third redistribution pattern is in direct contact with the first redistribution pattern, wherein the third redistribution pattern includes a third via part, and
wherein the length of the second via part is greater than a length of the third via part. Fig. 7.
Regarding claim 4, wherein the second redistribution pattern further includes a second via pad part that vertically overlaps the second via part,
wherein the third redistribution pattern further includes a third via pad part that vertically overlaps the third via part, and
wherein the second via pad part and the third via pad part are located at different levels. Fig. 7.
Regarding claim 8, wherein the first dielectric layer and the second dielectric layer include at least one selected from photosensitive polyimide (para [0055].)
Regarding claim 9, each of the first redistribution pattern and the second redistribution pattern includes a seed/barrier pattern and a metal pattern on the seed/barrier pattern, wherein the seed/barrier pattern includes copper/titanium, and wherein the metal pattern includes copper. Fig. 7 and para [0051].
Regarding claim 18, wherein patterning of the first dielectric layer and the second dielectric layer includes an exposure process, a development process, and a curing process (para [0055].)
Allowable Subject Matter
Claims 5-6, 10-15, and 17 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
The prior art does not show wherein the first chip pad has a first diameter, wherein the second chip pad has a second diameter, and the second diameter is greater than the first diameter. And further comprising forming a third redistribution pattern in direct contact with the first redistribution pattern,
wherein forming the second redistribution pattern and forming the third redistribution pattern are performed simultaneously.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to NATHAN W HA whose telephone number is (571)272-1707. The examiner can normally be reached M-T: 8:00AM-6:00PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, WAEL FAHMY can be reached at (571)-272-1705. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/NATHAN W HA/Primary Examiner, Art Unit 2814
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