Prosecution Insights
Last updated: July 17, 2026
Application No. 18/635,635

THREE DIMENSIONAL SWITCHING VOLTAGE REGULATOR

Non-Final OA §102§112
Filed
Apr 15, 2024
Priority
Aug 14, 2023 — RE 10-2023-0106210
Examiner
CHAMBLISS, ALONZO
Art Unit
2838
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
90%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
65%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allowance Rate
1068 granted / 1186 resolved
+22.1% vs TC avg
Minimal -25% lift
Without
With
+-24.7%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
23 currently pending
Career history
1208
Total Applications
across all art units

Statute-Specific Performance

§101
3.9%
-36.1% vs TC avg
§103
52.3%
+12.3% vs TC avg
§102
12.8%
-27.2% vs TC avg
§112
9.1%
-30.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1186 resolved cases

Office Action

§102 §112
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-8,11, 14-18, and 20 in the reply filed on 3/20/2026 is acknowledged. Claims 9, 10, 12, 13, and 19 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species claims, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 3/20/2026. Information Disclosure Statement The information disclosure statement (IDS) submitted on 4/15/2024 and 10/16/2024 were filed after the mailing date of the Non-final rejection on 6/21/2026. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Drawings The formal drawings filed on 4/15/2024 have been approved by the examiner. Claim Rejections - 35 USC § 112 Claims 1-8, 11, 14-18, and 20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. In claims 1 and 20, the phrase “ the first die has a first figure of merit (FOM) characteristic, and the second die has a second figure of merit (FOM) characteristic different from the first figure of merit (FOM) characteristic ” is vague and indefinite since it is not clear from the claim what the first figure of merit (FOM) and the second figure of merit (FOM) would be in the switching voltage regulator. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-3, 6-8, 11, and 14 insofar as being definite are rejected under 35 U.S.C. 102(a)(1) as being clearly anticipated by Carpenter et al. (US 9,842,797). With respect to Claim 1, Carpenter teaches a converting circuit 300 configured to receive an input voltage and to generate an output voltage through a switching operation. A control circuit configured to cause the output voltage to be generated by controlling the switching operation. The converting circuit comprises at least one switch 315 formed on a first die 310 and configured to perform the switching operation under control of the control circuit (i.e. the combination of 130, bonding wire 131, and 326). At least one blocking transistor (i.e. pair of lateral transistors) formed on a second die 320 and electrically connected to at least one first transistor. The first die 310 is vertically stacked on the second die 320. The first die 310 has a first figure of merit (FOM) characteristic (i.e. Low side power transistor) and the second die has a second figure of merit (FOM) characteristic (i.e. high side power transistor with lateral spaced apart transistor) different from the first figure of merit (FOM) characteristic (see col. 2 lines 19-60, col. 4 lines 10-65, and col. 5 lines 10-65; Figs. 1A, 1B, and 2-4). With respect to Claim 2, Carpenter teaches the at least one switch formed on the first die 310 comprises a first switch configured to receive the input voltage. A second switch connected to a ground voltage, wherein the control circuit is configured to cause the first switch to open and close and to cause the second switch to open and close (see col. 4 lines 10-45).. With respect to Claim 3, Carpenter teaches the first switch in the first die 310 comprises a plurality of p-channel metal-oxide semiconductor (PMOS) transistors connected in series. The second switch in chip 320 comprises a plurality of n-channel metal-oxide semiconductor (NMOS) transistors connected in series (see col. 3 lines 40-52 and col. 5 lines 10-20; Figs. 3 and 4). With respect to Claim 6, Carpenter teaches the at least one blocking transistor 325, 325’ comprises a first transistor 325 electrically connected to the first switch. A second transistor 325’ connected in series to the first transistor and electrically connected to the second switch (see Figs. 3 and 4). With respect to Claim 7, Carpenter teaches the converting circuit further comprises at least one switch 325 or 325’ formed on the second die and configured to perform the switching operation under the control of the control circuit (see Figs. 3 and 4). With respect to Claim 8, Carpenter teaches the at least one blocking transistor 325, 325’ comprises a p-channel metal-oxide semiconductor (PMOS) transistor electrically connected to the at least one switch formed on the first die 310. An n-channel metal-oxide semiconductor (NMOS) transistor connected in series to the PMOS transistor and electrically connected to the at least one switch formed on the second die 320 (see col. 3 lines 39-50 and col. 2 lines 15-25). With respect to Claim 11, Carpenter teaches the converting circuit further comprises at least one switch 325 formed on the second die and connected in series to the at least one blocking transistor 325’ (see Figs. 3 and 4). With respect to Claim 11, Carpenter teaches a portion of the control circuit (i.e. 326) formed on the second die 320 (see Figs. 3 and 4). With respect to Claim 17, Carpenter teaches the first die 310 and the second die 320are bonded to each other in a face-to-face (F2F) configuration (see Figs. 3 and 4) Allowable Subject Matter Claim 20 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. 11. Claims 4 are 15-18 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is a statement of reasons for the indication of allowance subject matter: none of the prior art of record teaches or suggest the combination of a number of the plurality of PMOS transistors and a number of the plurality of NMOS transistors are determined based on a voltage provided to a gate of the at least one blocking transistor in claim 4. The control circuit comprises a gate controller formed on the first die and configured to generate a first gate voltage controlling the at least one switch. A voltage generator formed on the second die and configured to generate a second gate voltage controlling the at least one blocking transistor in claim 15. The first die and the second die are bonded to each other in a face-to-face (F2F) configuration in claim 16. The converting circuit further comprises an inductor formed on the second die and electrically connected to the at least one blocking transistor in claim 18. A second die stacked on the first die, wherein a plurality of transistors are formed on the second die. The blocking transistor is configured to block an input voltage. the blocking transistor and the plurality of transistors are configured to operate as a converting circuit of a DC-DC converter in claim 20, Conclusion 12. Any inquiry concerning the communication or earlier communications from the examiner should be directed to Alonzo Chambliss whose telephone number is (571) 272-1927. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Jacob Y. Choi can be reached on (469) 295-9060. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system Status information for published applications may be obtained from either Private PMR or Public PMR. Status information for unpublished applications is available through Private PMR only. For more information about the PMR system see hittp://pair-dkect.usptol gov. Should you have questions on access to the Private PMR system contact the Electronic Center (EBC) at 866-217-9197 (toll-free). AC/June 21, 2026 /Alonzo Chambliss/ Primary Examiner, Art Unit 2897
Read full office action

Prosecution Timeline

Apr 15, 2024
Application Filed
Jun 24, 2026
Non-Final Rejection mailed — §102, §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12685212
SWITCHING DEVICE ELECTRICALLY CONNECTED TO A LEAD FRAME BY A BONDING MATERIAL
3y 1m to grant Granted Jul 14, 2026
Patent 12672292
SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF DIELECTRIC LAYERS STACKED ON FERROELECTRIC LAYER
4y 1m to grant Granted Jun 30, 2026
Patent 12672553
ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF
2y 11m to grant Granted Jun 30, 2026
Patent 12672435
DISPLAY PANEL
2y 6m to grant Granted Jun 30, 2026
Patent 12666546
CIRCUIT BOARD WITH A PLURALITY OF LAMINATED INSULATING LAYERS HAVING CONDUCTIVE PASTE FILLED VIAS AND MANUFACTURING METHOD THEREOF
3y 7m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
90%
Grant Probability
65%
With Interview (-24.7%)
2y 1m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1186 resolved cases by this examiner. Grant probability derived from career allowance rate.

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