Prosecution Insights
Last updated: April 19, 2026
Application No. 18/637,823

DELTA-SIGMA MODULATOR-BASED VARIABLE-RESOLUTION ACTIVATION IN-MEMORY COMPUTING MACRO

Non-Final OA §103
Filed
Apr 17, 2024
Examiner
CHO, SUNG IL
Art Unit
2825
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
The Research Foundation For The State Univeristy Of New York
OA Round
1 (Non-Final)
91%
Grant Probability
Favorable
1-2
OA Rounds
2y 2m
To Grant
99%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allow Rate
519 granted / 569 resolved
+23.2% vs TC avg
Moderate +8% lift
Without
With
+8.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
42 currently pending
Career history
611
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
48.2%
+8.2% vs TC avg
§102
28.9%
-11.1% vs TC avg
§112
11.2%
-28.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 569 resolved cases

Office Action

§103
DETAILED ACTION This action is responsive to the following communications: the Application filed April 17, 2024, and Response to Election / Restriction filed January 12, 2026. Claims 1-20 are pending. Claims 10-20 are withdrawn from consideration as being drawn to non-elected inventions without traverse. Claim 1 is independent. Notice of Pre-AIA or AIA Status The present application is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on April 17, 2024 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 103 The following is a quotation of AIA 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-9 are rejected under AIA 35 U.S.C. 103 as being unpatentable over Berdan et al. (US 2022/0405057) in view of Yang et al. (US 12,524,207). Regarding independent claim 1, Berdan et al. teach a method for improving linearity during multiply and accumulate (MAC) computations in an in memory computing (IMC) macro (e.g., para. 0027: … executes sum-of-product operation that multiplies a multi-bit input by a multi-bit weight and adds results of the multiplication …) comprising: converting an input activation of analog input into binary pulses; applying the binary pulses as a digital bitstream to the IMC macro for computation (e.g., para. 0029: … executed in a memory device by performing the arithmetic logic operation …; also para. 0036: … the input data Din …); and determining output bits by performing charge-domain MAC computations on the binary pulses and weights stored in the IMC macro (e.g., para. 0029: … executed in a memory device by performing the arithmetic logic operation corresponding to a weight bit for an input bit in a bit-wise logical operation circuit arranged in the memory … also para. 0036: … the input data Din … and a weight vector W …); and providing the output bits through a plurality of read bit lines (RBL) bits (e.g., FIG. 1: Vy to Dy, along with FIG. 8: Y, i.e., para. 0100: bit lines BL0 to BL(n-1)). Berdan et al’ input data (e.g., FIG. 1: Din) does not explicitly disclose an analog input and converting into binary data. However, analog input converting into digital data for a computing device is a well-known technology for a type of computing device for its purpose. For support, of the above asserted facts, see for example, Yang’s FIG. 1: ADC, and accompanying disclosure. Berdan and Yang are analogous art because they both are directed to computing operations with SRAM device and one of ordinary skill in the art would have had a reasonable expectation of success to modify Berdan with the specified features of Yang because they are from the same field of endeavor. It would have been obvious to one of ordinary skill in the art before the effective filing date to apply the teaching of Yang et al. to the teaching of Berdan et al. such that a logic operation system, as taught by Berdan et al., utilizes ADC, as taught by Yang et al., for the purpose of utilizing analog input and performing logic operation, thereby achieving high performance logic operations with analog input. Regarding claim 2, Berdan et al. and Yang et al., as combined, teach the limitations of claim 1. Berdan et al. further teach combining and weighting the plurality of RBL bits based on bit positions of the plurality of RBL bits (e.g., para. 0025: a bit position value of a weigh of multiple bits). Regarding claim 3, Berdan et al. and Yang et al., as combined, teach the limitations of claim 1. Berdan et al. further teach the IMC macro comprises: an array of capacitive bitcells having between six and twelve transistors inclusive (e.g., FIGS. 10-11). Regarding claim 4, Berdan et al. and Yang et al., as combined, teach the limitations of claim 3. Berdan et al. further teach charging the array of capacitive bitcells by applying the binary pulses to a static random access memory (SRAM) capacitor through a read word line (RWL) (FIGS. 10-11: WL). Regarding claim 5, Berdan et al. and Yang et al., as combined, teach the limitations of claim 3. Berdan et al. further the array of capacitive bitcells comprises: a 64x64 array of 9T1C SRAM with weights (e.g., para. 0119: a 9T1C type). Berdan et al. do not explicitly disclose 64x64 array. However, Yang et al. disclose 128x64 array (FIG. 1); and expanding the size of an array in a memory array such as 64x64 array is a well-known technology for a type of memory (e.g., SRAM) for its purpose. It would have been obvious to one of ordinary skill in the art before the effective filing date to utilize static random access memory used a variety size of matrices structure because these conventional technology are well established in the art of the memory devices. Regarding claim 6, Berdan et al. and Yang et al., as combined, teach the limitations of claim 1. Berdan and Yang are silent with respect to creating the binary pulses using a delta-sigma modulator (DSM). However, the claimed DSM in pulse generation is a well-known technology for a type of data processing for its purpose. For support, of the above asserted facts, see for example, Greer, III (US 2017/0039926), FIG. 3 and accompanying disclosure, e.g., para. 0034: a delta-sigma modulator … binary scalars having a value of one or zero generated as output signal. It would have been obvious to one of ordinary skill in the art before the effective filing date to utilize DSM in pulse generation because these conventional technology are well established in the art of the memory devices. Regarding claims 7-8, Berdan et al., Yang et al., as combined, teach the limitations of claim 6. Berdan and Yang are silent with respect to reconfiguring the DSM to modify a binary pulse train; and dynamically reconfiguring the input activation by changing an oversampling ratio (OSR) of the DSM. However, the claimed a binary pulse train and oversampling ratio of the DSM is a well-known technology for a type of data processing for its purpose. It would have been obvious to one of ordinary skill in the art before the effective filing date to utilize DSM in pulse generation because these conventional technology are well established in the art of the memory devices. Regarding claim 9, Berdan et al. and Yang et al., as combined, teach the limitations of claim 1. Berdan et al. further teach the IMC macro comprises: an array of 9T1C SRAM bitcells (e.g., para. 0119: a 9T1C type). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SUNG IL CHO whose telephone number is (571)270-0137. The examiner can normally be reached M-Th, 7:30AM-5PM; Every other F, 7:30AM-4PM EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alexander G Sofocleous can be reached on 571-272-0635. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SUNG IL CHO/Primary Examiner, Art Unit 2825
Read full office action

Prosecution Timeline

Apr 17, 2024
Application Filed
Jan 27, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12580013
MEMORY SYSTEM
2y 5m to grant Granted Mar 17, 2026
Patent 12580009
COMPUTE-IN-MEMORY CIRCUIT BASED ON CHARGE REDISTRIBUTION, AND CONTROL METHOD THEREOF
2y 5m to grant Granted Mar 17, 2026
Patent 12567466
NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES
2y 5m to grant Granted Mar 03, 2026
Patent 12562202
MEMORY DEVICE SUPPLYING CURRENT TO FIRST MEMORY CELL BASED ON A FIRST CURRENT AND A SECOND CURRENT FLOWING IN SECOND MEMORY CELLS
2y 5m to grant Granted Feb 24, 2026
Patent 12550629
SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
91%
Grant Probability
99%
With Interview (+8.5%)
2y 2m
Median Time to Grant
Low
PTA Risk
Based on 569 resolved cases by this examiner. Grant probability derived from career allow rate.

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