Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825
This examiner grants 91% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18669633 | MEMORY DEVICES AND OPERATING METHODS THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18791901 | SERIAL WORD LINE ACTUATION WITH LINKED SOURCE VOLTAGE SUPPLY MODULATION FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM) | Non-Final OA | STMicroelectronics International N.V. |
| 18244782 | ANALOG IN-MEMORY COMPUTATION PROCESSING CIRCUIT USING SEGMENTED MEMORY ARCHITECTURE | Non-Final OA | STMicroelectronics International N.V. |
| 18739363 | PRE-CHARGE SYSTEM FOR PERFORMING TIME-DIVISION PRE-CHARGE UPON BIT-LINE GROUPS OF MEMORY ARRAY AND ASSOCIATED PRE-CHARGE METHOD | Non-Final OA | MEDIATEK INC. |
| 18444776 | DUAL-RAIL MEMORY DEVICE WITH HIGH SPEED AND LOW POWER CONSUMPTION | Non-Final OA | MEDIATEK INC. |
| 18771863 | MEMORY CELL ARRAY AND METHOD OF OPERATING SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18769407 | MEMORY DEVICE INCLUDING DUAL CONTROL CIRCUITS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18758504 | NEW WAS CELL FOR SRAM HIGH-R ISSUE IN ADVANCED TECHNOLOGY NODE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18748972 | MEMORY CIRCUITS AND METHODS FOR OPERATING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18545370 | SEMICONDUCTOR DEVICE | Non-Final OA | SK hynix Inc. |
| 17380899 | SEMICONDUCTOR DEVICES | Final Rejection | SK hynix Inc. |
| 18571407 | AUGMENTED MEMORY COMPUTING: A NEW PATHWAY FOR EFFICIENT AI COMPUTATIONS | Non-Final OA | UNIVERSITY OF SOUTHERN CALIFORNIA |
| 18506989 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH WELL TAP CELLS | Non-Final OA | Socionext Inc. |
| 18355359 | MULTI-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS | Non-Final OA | Sandisk Technologies, Inc. |
| 18418060 | OPERATION SCHEME FOR FOUR TRANSISTOR STATIC RANDOM ACCESS MEMORY | Non-Final OA | FlashSilicon Incorporation |
| 18047097 | WORD LINE VOLTAGE DETECTION CIRCUIT FOR ENCHANCED READ OPERATION | Non-Final OA | Intel NDTM US LLC |
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