Prosecution Insights
Last updated: August 17, 2026
Application No. 18/640,071

FABRICATION OF REFLECTIVE POLYMER WAVEGUIDE MOLD

Non-Final OA §102§103
Filed
Apr 19, 2024
Priority
Apr 20, 2023 — provisional 63/460,712
Examiner
CULBERT, ROBERTS P
Art Unit
1716
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Google LLC
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
78%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
669 granted / 820 resolved
+16.6% vs TC avg
Minimal -4% lift
Without
With
+-3.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
20 currently pending
Career history
840
Total Applications
across all art units

Statute-Specific Performance

§101
0.9%
-39.1% vs TC avg
§103
44.4%
+4.4% vs TC avg
§102
34.0%
-6.0% vs TC avg
§112
9.3%
-30.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 820 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant's election with traverse of Group I in the reply filed on 5/6/26 is acknowledged. The traversal is on the ground(s) that there is no undue burden and Claims are not independent and distinct. This is not found persuasive because both requirements independent or distinct and burden reasoning are outlined in the restriction requirement. The requirement is still deemed proper and is therefore made FINAL. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-6, 9 and 10 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US Publication 2002/0127497 to Brown et al. Regarding Claim 1, Brown et al. teaches a method, comprising: depositing a hard mask layer (310) on a crystalline substrate (300); lithographically patterning the hard mask layer with photoresist (320) to form a first pattern; and anisotropically removing the crystalline substrate to form a prism array waveguide (Fig 10D) mold with the first pattern. Regarding Claim 2, Brown et al. teaches a crystal axis (111 planes) of the crystalline substrate defines periodic optical structures of the prism array. Regarding Claim 3, Brown et al. teaches adjusting a pitch and flat top width of a lithographic pattern (Paragraph 40) for lithographically patterning the hard mask layer to define a height of the periodic optical structures of the prism array. Regarding Claim 4, Brown et al. teaches anisotropically removing the crystalline substrate is performed by wet chemical (Paragraph 37) etching. Regarding Claim 5, Brown et al. teaches patterning the hard mask layer comprises lithography exposure, development (Paragraph 40), and pattern transfer from lithography resist to the hard mask layer (Paragraph 41). Regarding Claim 6, Brown et al. teaches replicating the first pattern of the prism array waveguide mold on an optical substrate (440) with a functional resin (430) to form a resin replica. Regarding Claim 9, Brown et al. teaches replicating a second pattern of a second prism array waveguide (second groove or facet) on the optical substrate (440) with the functional resin (430) to form a two-dimensional resin replica as broadly recited. Regarding Claim 10, Brown et al. teaches lithographically patterning the hard mask layer to form a second pattern (second stripe); and anisotropically removing the crystalline substrate to form a prism array waveguide mold comprising the first pattern and the second pattern (Figure 10D). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 7 and 8 are rejected under 35 U.S.C. 103 as being unpatentable over US Publication 2002/0127497 to Brown et al. in view of JP 2004286956 to Abe et al. Regarding Claim 7, Brown et al. teaches the method of the invention substantially as claimed, but does not expressly teach shrinking the resin replica to reduce a prism angle. However, the effect of resin shrink on angle is old and well known in the art of forming prism replicas. For example, Abe et al. teaches the blaze angle may be smaller due to resin shrinkage (translation). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to shrink a resin replica to reduce a prism angle in the well-known manner in order to provide a desired angle with predictable results. Regarding Claim 8, Brown et al. teaches depositing an anti-sticking layer (420) on the resin replica. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US Patent 4,330,175 to Fujii et al. teaches a method (Fig 12 and Col. 7, Lines 43-64)), comprising: depositing a hard mask layer (protection film) on a crystalline substrate; lithographically patterning the hard mask layer to form a first pattern and anisotropically removing the crystalline substrate to form a prism array waveguide mold with the first pattern; a crystal axis ({111} plane) of the crystalline substrate defines periodic optical structures of the prism array; adjusting (implicit) a pitch and flat top width of a lithographic pattern for lithographically patterning the hard mask layer (Fig 4) to define a height of the periodic optical structures of the prism array; anisotropically removing the crystalline substrate is performed by wet chemical (KOH solution) etching; (Fig 12) patterning the hard mask layer comprises lithography exposure, development, and pattern transfer from lithography resist to the hard mask layer. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Roberts P Culbert whose telephone number is (571)272-1433. The examiner can normally be reached Monday thru Thursday 7:30 AM-6 PM EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ROBERTS P CULBERT/Primary Examiner, Art Unit 1716
Read full office action

Prosecution Timeline

Apr 19, 2024
Application Filed
Aug 07, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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ETCHING METHOD
3y 3m to grant Granted Aug 11, 2026
Patent 12701948
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
2y 5m to grant Granted Aug 04, 2026
Patent 12695915
COMPOSITION AND METHOD FOR TREATING SUBSTRATE
3y 4m to grant Granted Jul 28, 2026
Patent 12692413
POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
3y 1m to grant Granted Jul 28, 2026
Patent 12692414
POLISHING COMPOSITION, PRODUCTION METHOD OF POLISHING COMPOSITION, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE
2y 10m to grant Granted Jul 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
78%
With Interview (-3.9%)
2y 4m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 820 resolved cases by this examiner. Grant probability derived from career allowance rate.

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