Prosecution Insights
Last updated: August 17, 2026
Application No. 18/642,368

HIGH EFFICIENCY SINGLE-PHOTON AVALANCHE DIODE (SPAD) PIXEL

Non-Final OA §102§Other
Filed
Apr 22, 2024
Priority
Jan 29, 2024 — provisional 63/626,159
Examiner
MENZ, LAURA MARY
Art Unit
Tech Center
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
88%
Grant Probability
Favorable
1-2
OA Rounds
1m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
828 granted / 946 resolved
+27.5% vs TC avg
Moderate +9% lift
Without
With
+8.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
37 currently pending
Career history
975
Total Applications
across all art units

Statute-Specific Performance

§101
3.1%
-36.9% vs TC avg
§103
27.4%
-12.6% vs TC avg
§102
40.1%
+0.1% vs TC avg
§112
7.5%
-32.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 946 resolved cases

Office Action

§102 §Other
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-12 in the reply filed on 7/21/26 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-12 is/are rejected under 35 U.S.C. 102a1 as being anticipated by Borthakur et al (US 2021/0175272). A photodetector comprising: a plurality of pixels [0037-0038], each pixel of the plurality of pixels comprising: a plurality of photo-sensing elements (Fig.7-8/13 (204-1/204-2/204-3) and [0050]); at least one micro-lens (Fig.7-8/13 (286-1/286-2) and [0060]) on the plurality of photo-sensing elements (Fig.7-8/13 (204-1/204-2/204-3) and [0050]); and a refractive element (Fig.7-8/13 (270) and [0058-0067]) between the plurality of photo-sensing elements (Fig.7-8/13 (204-1/204-2/204-3) and [0050]) and the at least one micro-lens(Fig.7-8/13 (286-1/286-2) and [0060]), wherein an optical center of the at least one micro-lens (Fig.13 (286-1/286-2) and [0060]) is offset from a center of each of the plurality of sensing elements (Fig.7-8/13 (204-1/204-2/204-3) and [0050]). The photodetector of claim 1, wherein a number of the at least one micro-lens (Fig.7-8/13 (286-1/286-2) and [0060- 2]) is less than a number of the plurality of photo-sensing elements (Fig.7-8/13 (204-1/204-2/204-3) and [0050-3]). 3. The photodetector of claim 1, wherein the refractive element comprises a material having a refractive index greater than 1.5 [0057]. 4. The photodetector of claim 3, wherein the material of the refractive element is selected from the group consisting of SiO2 ,Si3N4, Si, Ge, GaN, GaAs, InAs, InP, ZnS, ZnSe, ZnTe, PbTe, PbSe, PbS, Te, HfO2, TiO2, ZrO2, Al2O3, Ta2O5, LiNbO3 , and a high refractive index polymer material [0053-0056]. 5. The photodetector of claim 1, wherein the refractive element is a multi-facet prism (Fig.7-8/13 (270) and [0058-0067]). 6. The photodetector of claim 1, wherein the refractive element is a Fresnel prism (Fig.7-8/13 (270) and [0058-0067]). 7. The photodetector of claim 1, wherein the refractive element is a nanostructure prism (Fig.7-8/13 (270) and [0058-0067]). 8. The photodetector of claim 5, wherein a number of facets of the multi-facet prism (Fig.7-8/13 (270) and [0058-0067]) is equal to a number of sensing elements in the pixel (Fig.7-8/13 (204-1/204-2/204-3) and [0050]). 9. The photodetector of claim 8, wherein facets of the multi-facet prism are angled at least two different angles (Fig.7-8/13 (270) and [0058-0067]). 10. The photodetector of claim 9, wherein an angle of a first facet of the multi-facet prism is substantially zero (Fig.8 (270) and [0058-0067]). 11. The photodetector of claim 1, wherein the plurality of photo-sensing elements is a plurality of single-photon avalanche diodes (SPADs) (Fig.7-8/13 (204-1/204-2/204-3) and [0050]). 12. The photodetector of claim 1, wherein the plurality of photo-sensing elements is a plurality of photodiodes [0027]. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Borthakur et al (US 2021/0175380; US 20230215960 and US 11652176) teach similar SPAD pixels which contain refractive elements. Any inquiry concerning this communication or earlier communications from the examiner should be directed to LAURA M MENZ whose telephone number is (571)272-1697. The examiner can normally be reached Monday-Friday 7:00-3:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Gauthier can be reached at 571-270-0373. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /LAURA M MENZ/Primary Examiner, Art Unit 2813 8/2/26
Read full office action

Prosecution Timeline

Apr 22, 2024
Application Filed
Aug 05, 2026
Non-Final Rejection mailed — §102, §Other (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Patent 12702002
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Patent 12701809
SEMICONDUCTOR PACKAGE INCLUDING MULTIPLE SEMICONDUCTOR CHIPS
2y 11m to grant Granted Aug 04, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
88%
Grant Probability
96%
With Interview (+8.7%)
2y 5m (~1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 946 resolved cases by this examiner. Grant probability derived from career allowance rate.

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