DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant’s election without traverse of Group 1, claims 1-16, in the reply filed on 07/13/2026 is acknowledged.
Status of the Application
Claims 1-20 remain pending in this application. Claims 17-20 are withdrawn.
Claim Objections
Claims 6, 7, and 11 objected to because of the following informalities:
Regarding claim 6, the claim recites “the first optical material”, it appears it should read “the first optical material layer”, or another appropriate correction.
Regarding claim 7, the claim recites “the second optical material”, it appears it should read “the second optical material layer”, or another appropriate correction.
Regarding claim 11, the claim recites “the second optical material”, it appears it should read “the second optical material layer”, or another appropriate correction.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
Claims 1-8, 14, and 15 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Regarding claim 1, it recites the limitation "the optical material layer" in line 5. There is insufficient antecedent basis for this limitation in the claim. The examiner interprets the claim to have intended to state “the first optical material layer”, in which case proper antecedent basis is established. The claim will be examined on the basis of this interpretation hereafter. Appropriate correction is required.
Regarding claims 2-8, the claims depends from rejected claim 1, includes all limitations of claim 1 and therefore are rejected for the same reason. The claims will be examined on the basis of interpretation of the rejected claim hereafter.
Regarding claim 14, it recites the limitation "the second masking layer" in line 2. There is insufficient antecedent basis for this limitation in the claim. The examiner interprets the claim to have intended to state “a second masking layer”, in which case proper antecedent basis is established. The claim will be examined on the basis of this interpretation hereafter. Appropriate correction is required.
Regarding claim 15, it recites the limitation "the trench fill material" in line 2. There is insufficient antecedent basis for this limitation in the claim. The examiner interprets the claim to have intended to state “a trench fill material”, in which case proper antecedent basis is established. The claim will be examined on the basis of this interpretation hereafter. Appropriate correction is required.
Allowable Subject Matter
Claims 9-13, and 16 are allowable.
Claims 1-8 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action.
Claim 14 and 15 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims.
The following is a statement of reasons for the indication of allowable subject matter:
Regarding claim 1, it is allowable, notwithstanding the above rejection, primarily because the prior arts of record, singly or in combination, neither anticipates nor render obvious the following limitations when taken in combination with all other limitations:
removing the etch stop layer by performing a wet etch through the opening, wherein the wet etch forms a cavity beneath the plurality of pillars. (Applicant ¶0038, fig 9).
Noudo et al (US 20250120205 A1, hereafter Noudo) teaches: A method of forming an image sensor (Noudo fig 1, 4, 36A-38D), the method comprising:
forming an etch stop layer (Noudo 91, ¶0456) atop a spacer layer (Noudo 48)(Noudo fig 36A, ¶0440), wherein the spacer layer is formed over a color filter (Noudo 110)(Noudo fig 69, ¶0536);
forming a first optical material layer (Noudo 92, ¶0402, 0405) over the etch stop layer (Noudo fig 36C, ¶0442);
forming a plurality of pillars (Noudo 93, ¶0402) from the optical material layer (as best understood to mean “the first optical material layer”)(Noudo fig 36D, ¶0443);
forming an opening (Noudo 92b) through a first pillar of the plurality of pillars (Noudo fig 38B, ¶0459),
performing a wet etch through the opening (Noudo fig 38C, ¶0460), wherein the wet etch forms a cavity (Noudo 99, ¶0460)(Noudo fig 38C).
Akselrod et al (US 20190301025 A1, hereafter Akselrod) teaches: A method of forming an optical metasurface (Akselrod fig 6A-I, ¶0083-0104), the method comprising:
forming an etch stop layer (Akselrod 620, at least capable thereof, ¶0091, 0106) atop a spacer layer (Akselrod 618, ¶0089)(Akselrod fig 6F, ¶0089, 0091);
forming a first optical material layer (Akselrod 622, at least capable thereof, ¶0042, 0047, 0061) over the etch stop layer (Akselrod fig 6F, ¶0091);
forming a plurality of pillars (Akselrod 622, ¶0102)(Akselrod fig 6G, ¶0098);
removing the etch stop layer by performing a wet etch (Akselrod fig 6G, ¶0093, 0099), wherein the wet etch forms a cavity (Akselrod 621)(Akselrod fig 6G, ¶0098); and
forming a second optical material layer (Akselrod 626, ¶0102) within the cavity (Akselrod fig 6I, ¶0102).
Sreenivasan et al (US 20230245996 A1, hereafter Sreenivasan) teaches: A method (Sreenivasan ¶0679-0685, 0760, figs 84A-G), the method comprising:
forming an etch stop layer (Sreenivasan 8401, ¶0667, 0682) atop a spacer layer (Sreenivasan 8403, ¶0680)(Sreenivasan fig 84B, ¶0680);
forming a first material layer (Sreenivasan 8402) over the etch stop layer (Sreenivasan 84B);
forming a plurality of pillars (Sreenivasan 8405) from the first material layer (Sreenivasan 84C);
forming an opening between the plurality of pillars, the opening exposing the etch stop layer (Sreenivasan 84C);
removing a portion of the etch stop layer (Sreenivasan 84D) by performing a wet etch through the opening (Sreenivasan 84D, ¶0682), wherein the wet etch forms a cavity below the plurality of pillars (Sreenivasan 84D, at least the space no longer occupied by removed portions of 8401); and
forming a second material layer (Sreenivasan 8406) within the cavity (Sreenivasan 84E).
Therefore, Noudo in view of Akselrod and/or Sreenivasan in combination disclose some of the features of the claimed invention, but there is no motivation/teaching and do not render obvious to combine and/or modify Noudo, Akselrod, Sreenivasan, or any other prior arts of record so that all of limitations of claim 1 as a whole can be met.
Regarding claims 2-8, the dependent claims are allowable for their dependency to claim 1.
Regarding claim 9, it is allowable primarily because the prior arts of record, singly or in combination, neither anticipates nor render obvious the following limitations when taken in combination with all other limitations:
removing the etch stop layer by performing a wet etch through the opening, wherein the wet etch forms a cavity between the spacer layer and the plurality of nanopillars
removing the etch stop layer by performing a wet etch through the opening, wherein the wet etch forms a cavity beneath the plurality of pillars; and
forming a second optical material layer within the cavity and within the opening through the first nanopillar of the plurality of nanopillars. (Applicant ¶0038-0039, fig 9, 10).
Noudo et al (US 20250120205 A1, hereafter Noudo) teaches: A method of forming a meta lens assembly (Noudo 90, ¶0400, 36A-38D), the method comprising:
forming an etch stop layer (Noudo 91, ¶0456) atop a spacer layer (Noudo 48)(Noudo fig 36A, ¶0440), wherein the spacer layer is formed over a color filter (Noudo 110)(Noudo fig 69, ¶0536);
forming a first optical material layer (Noudo 92, ¶0402, 0405) over the etch stop layer (Noudo fig 36C, ¶0442);
etching the first optical material layer to form a plurality of nanopillars (Noudo 93, ¶0402)(Noudo fig 36D, ¶0443);
forming an opening (Noudo 92b) through a first nanopillar of the plurality of nanopillars (Noudo fig 38B, ¶0459); and
performing a wet etch through the opening (Noudo fig 38C, ¶0460), wherein the wet etch forms a cavity (Noudo 99, ¶0460)(Noudo fig 38C).
Akselrod et al (US 20190301025 A1, hereafter Akselrod) teaches: A method of forming a meta lens assembly (Akselrod fig 6A-I, ¶0083-0104), the method comprising:
forming an etch stop layer (Akselrod 620, at least capable thereof, ¶0091, 0106) atop a spacer layer (Akselrod 618, ¶0089)(Akselrod fig 6F, ¶0089, 0091);
forming a first optical material layer (Akselrod 622, at least capable thereof, ¶0042, 0047, 0061) over the etch stop layer (Akselrod fig 6F, ¶0091);
forming a plurality of nanopillars (Akselrod 622, ¶0102)(Akselrod fig 6G, ¶0098);
removing the etch stop layer by performing a wet etch (Akselrod fig 6G, ¶0093, 0099), wherein the wet etch forms a cavity (Akselrod 621)(Akselrod fig 6G, ¶0098); and
forming a second optical material layer (Akselrod 626, ¶0102) within the cavity (Akselrod fig 6I, ¶0102).
Sreenivasan et al (US 20230245996 A1, hereafter Sreenivasan) teaches: A method (Sreenivasan ¶0679-0685, 0760, figs 84A-G), the method comprising:
forming an etch stop layer (Sreenivasan 8401, ¶0667, 0682) atop a spacer layer (Sreenivasan 8403, ¶0680)(Sreenivasan fig 84B, ¶0680);
forming a first material layer (Sreenivasan 8402) over the etch stop layer (Sreenivasan 84B);
etching the first material layer to form a plurality of nanopillars (Sreenivasan 8405)(Sreenivasan 84C);
forming an opening between the plurality of nanopillars, the opening extending to the etch stop layer (Sreenivasan 84C);
removing a portion of the etch stop layer (Sreenivasan 84D) by performing a wet etch through the opening (Sreenivasan 84D, ¶0682), wherein the wet etch forms a cavity below the plurality of nanopillars (Sreenivasan 84D, at least the space no longer occupied by removed portions of 8401); and
forming a second material layer (Sreenivasan 8406) within the cavity and within the opening between the plurality of nanopillars (Sreenivasan 84E).
Therefore, Noudo in view of Akselrod and/or Sreenivasan in combination disclose some of the features of the claimed invention, but there is no motivation/teaching and do not render obvious to combine and/or modify Noudo, Akselrod, Sreenivasan, or any other prior arts of record so that all of limitations of claim 9 as a whole can be met.
Regarding claims 10-16, the dependent claims are allowable, notwithstanding the above rejections, for their dependency to claim 9.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure:
Cheng et al (US 20170133429 A1) is cited as an example of an analogous method further removing portions of an etch stop layer exposed by openings.
Hansen et al (US 20240302568 A1) is cited as an example of an analogous method further removing portions of an etch stop layer exposed by openings.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to NICHOLAS B. MICHAUD whose telephone number is (703)756-1796. The examiner can normally be reached Monday-Friday, 0800-1700 Eastern Time.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, EVA MONTALVO can be reached at (571) 272-3829. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/NICHOLAS B. MICHAUD/
EXAMINER
Art Unit 2818
/BRIAN TURNER/Primary Examiner, Art Unit 2818
