DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-6 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 recites a “growth method for silicon carbide crystal” in line 1. It is unclear how claim 1 grows silicon carbide because the remaining claim limitations do not recite any method of crystal growth. Claim 1 merely requires monitoring a silicon content in silicon carbide that is evaporated and reducing pressure for nucleation and adjusting characteristic radiation. Claim 1 does not recite any method step, such as a crystal growth temperature, seed crystal, sublimation growth process, temperature gradient etc; therefore, it is unclear how to grow a silicon carbide crystal without any crystal growth steps. The same arguments apply to dependent claims 2-6.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
CN116334748A teaches the partial pressure of silicon can affect the nucleation of silicon carbide on a seed crystal (computer translation [0005]).
US 2021/0123157 teaches a SiC growth method where pressure is controlled to create a more suitable crystal growth atmosphere ([0062]).
US 2022/0020852 teaches a SiC growth method comprising adjusting a temperature, a pressure, and an atmosphere of the inner space to sublimate the raw material, thereby preparing a silicon carbide ingot grown from the seed crystal ([0012]).
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MATTHEW J. SONG
Examiner
Art Unit 1714
/MATTHEW J SONG/Primary Examiner, Art Unit 1714
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