Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1714 1784 1792
This examiner grants 60% of resolved cases
Matthew J Song has managed 913 resolved cases within Tech Center 1700. The examiner maintains an allowance rate of 60.4 percent. For applications that reach allowance in Art Unit 1714, the median time to resolution is 1345 days. This pendency figure provides a baseline for practitioners when setting expectations for the duration of the prosecution process.
The data indicates that conducting an interview results in a 13.8 percent lift in the probability of allowance. This 13.8 percent increase suggests that direct engagement with the examiner is a strategy for addressing rejections. Given the 60.4 percent baseline allowance rate, an interview can be a factor in securing a patent. The volume of 913 cases indicates a substantial history of decisions for this examiner.
Practitioners should consider both the 1345-day median pendency and the 13.8 percent interview lift when developing a strategy. These metrics offer a view of the procedural landscape in Art Unit 1714. The 60.4 percent allowance rate serves as a primary statistical benchmark for applicants in this field.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17288362 | CRYSTAL, METHOD OF PRODUCING CRYSTAL, AND METHOD OF SELF-ORGANIZING SILANOL COMPOUND | Final Rejection | National Institute of Advanced Industrial Science and Technology |
| 18569005 | SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING THE SAME | Final Rejection | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18283790 | SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME | Final Rejection | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18873715 | METHOD FOR PREPARING FULLERENE SINGLE-CRYSTAL FILMS AND USES FIELD OF TECHNOLOGY | Non-Final OA | ZHEJIANG UNIVERSITY |
| 18703652 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE | Non-Final OA | DENSO CORPORATION |
| 18395658 | METHOD FOR MANUFACTURING AN INGOT AND SINGLE CRYSTAL GROWING FURNACE | Final Rejection | JINKO SOLAR CO., LTD. |
| 18614826 | LOW-TEMPERATURE ETCHANT-FREE SELECTIVE EPITAXY OF N-TYPE DOPED SILICON | Non-Final OA | Applied Materials, Inc. |
| 18590572 | LOW TEMPERATURE ATMOSPHERIC EPITAXIAL PROCESS | Final Rejection | Applied Materials, Inc. |
| 17659235 | SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUCTION METHOD | Final Rejection | AGC INC. |
| 18410216 | SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR | Final Rejection | NGK INSULATORS, LTD. |
| 18348533 | METHOD AND APPARATUS FOR PROCESSING A SINGLE CRYSTAL BLANK | Non-Final OA | DISCO CORPORATION |
| 18720973 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18738193 | MANAGING THE GROWTH OF SILICON CARBIDE CRYSTALS | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18937248 | Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond Growth | Non-Final OA | Plasmability, LLC |
| 18412905 | Method of Growing Personalized Single Crystal Diamond | Non-Final OA | Plasmability, LLC |
| 18766019 | METHOD FOR MANUFACTURING SAPPHIRE BARS | Non-Final OA | Comadur SA |
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