Tech Center 1700 • Art Units: 1714 1792
This examiner grants 60% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18395658 | METHOD FOR MANUFACTURING AN INGOT AND SINGLE CRYSTAL GROWING FURNACE | Non-Final OA | JINKO SOLAR CO., LTD. |
| 18590572 | LOW TEMPERATURE ATMOSPHERIC EPITAXIAL PROCESS | Non-Final OA | Applied Materials, Inc. |
| 18051236 | METHODS FOR MANUFACTURING ORGANIC SOLID CRYSTALS | Final Rejection | Meta Platforms Technologies, LLC |
| 18555514 | INGOT GROWING APPARATUS | Non-Final OA | HANWHA SOLUTIONS CORPORATION |
| 18683339 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18019916 | METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18873715 | METHOD FOR PREPARING FULLERENE SINGLE-CRYSTAL FILMS AND USES FIELD OF TECHNOLOGY | Non-Final OA | ZHEJIANG UNIVERSITY |
| 17659235 | SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUCTION METHOD | Non-Final OA | AGC INC. |
| 18306455 | Multi-port Phase Compensation Nested Microwave-plasma Apparatus for Diamond Film Deposition | Non-Final OA | Hangzhou Dianzi University |
| 18410216 | SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR | Non-Final OA | NGK INSULATORS, LTD. |
| 16902117 | HYDRIDE VAPOR PHASE EPITAXY REACTORS | Final Rejection | Alliance for Sustainable Energy, LLC |
| 18902914 | METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALS WITH MULTI-COMPONENT GARNET STRUCTURE | Non-Final OA | MEISHAN BOYA ADVANCED MATERIALS CO., LTD. |
| 18294193 | DEVICE AND METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON ROD | Non-Final OA | SILTRONIC AG |
| 18348533 | METHOD AND APPARATUS FOR PROCESSING A SINGLE CRYSTAL BLANK | Final Rejection | DISCO CORPORATION |
| 18411957 | METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED GATE BIPOLAR TRANSISTORS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18529747 | SINGLE CRYSTAL INGOT PULLER WITH HIGH-POWER LASER BEAM AS AUXILIARY HEATING SOURCE | Non-Final OA | GlobalWafers Co., Ltd. |
| 18448787 | CRUCIBLES HAVING ANCHORS | Final Rejection | GlobalWafers Co., Ltd. |
| 18412905 | Method of Growing Personalized Single Crystal Diamond | Non-Final OA | Plasmability, LLC |
| 18575113 | POLYCRYSTALLINE SIC FORMED BODY AND METHOD FOR PRODUCING THE SAME | Non-Final OA | TOKAI CARBON CO., LTD. |
| 17924306 | SEMICONDUCTOR GROWTH DEVICE AND OPERATION METHOD THEREOF | Final Rejection | Everbright Institute of Semiconductor Photonics Co., Ltd. |
| 18505963 | APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE | Non-Final OA | SLT Technologies, Inc. |
| 18355676 | INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH | Non-Final OA | SLT Technologies, Inc. |
| 18356127 | COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH | Final Rejection | SLT Technologies, Inc. |
| 18283210 | MOLTEN SILICON FEEDER FOR CONTINUOUS CZOCHRALSKI SINGLE CRYSTALS | Non-Final OA | SHANGHAI YINWAN PHOTOELECTRIC TECHNOLOGY CO., LTD |
| 18270095 | PROCESS FOR MANUFACTURING A MONOCRYSTALLINE CRYSTAL, IN PARTICULAR A SAPPHIRE | Final Rejection | FAMETEC GmbH |
| 18199285 | SYNTHESIS OF H-BN USING METALLIC SOLVENT AND HIGH-TEMPERATURE SOAKS | Non-Final OA | NS Nanotech, Inc. |
| 18019814 | EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY | Final Rejection | HUNAN SEMICOREPI SEMICONDUCTOR TECHNOLOGY CO., LTD. |
| 17700746 | METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES | Final Rejection | AXT, Inc. |
| 16036724 | In-Situ Passivation for Nonlinear Optical Crystals | Non-Final OA | KLA-Tencor Corporation |
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