Prosecution Insights
Last updated: July 17, 2026
Application No. 18/714,387

MAGNET FOR SINGLE CRYSTAL PRODUCTION APPARATUS, SINGLE CRYSTAL PRODUCTION APPARATUS, AND METHOD OF PRODUCING SINGLE CRYSTAL

Non-Final OA §102§103
Filed
May 29, 2024
Priority
Nov 30, 2021 — JP 2021-194947 +1 more
Examiner
KUNEMUND, ROBERT M
Art Unit
Tech Center
Assignee
SUMCO Corporation
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
9m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
1092 granted / 1330 resolved
+22.1% vs TC avg
Moderate +14% lift
Without
With
+14.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
26 currently pending
Career history
1352
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
78.6%
+38.6% vs TC avg
§102
5.0%
-35.0% vs TC avg
§112
5.4%
-34.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1330 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1 to 3, 5, 8 12, 13 and 15 is/are rejected under 35 U.S.C. 102 (a)(1) as being clearly anticipated by Takano et al (WO 2020225985). The Takano et al reference teaches a seed pulling method and apparatus with a magnetic field, note entire reference. The single crystal pulling apparatus comprising a pulling furnace having a central axis in which a heater and a crucible for accommodating molten single crystal material, note fig 1. There is a magnetic field generating device provided around the pulling furnace and having a superconducting coil and a cryostat incorporating the superconducting coil, para 0021 and 0024. The magnetic field generating device applying a horizontal magnetic field to the molten single crystal material by passing current through the superconducting coil, thereby suppressing convection of the molten single crystal material in the crucible, para 0022 The magnetic field generating device having four superconducting coils, the coil axes of all four superconducting coils being aligned in a single horizontal plane. When the direction of magnetic field lines at the central axis in the horizontal plane is taken as an X-axis, two of the superconducting coils are arranged in each of a first region and a second region divided by a cross section including the X-axis and the central axis of the pulling furnace, figure 2, para 0024. The four superconducting coils are arranged in line symmetry with respect to the cross section, and the four superconducting coils are all arranged such that their coil axes are in an angle range of more than -30° and less than 30° with respect to a Y-axis perpendicular to the X-axis in the horizontal plane. The direction of magnetic field lines generated by the four superconducting coils is linearly symmetric with respect to the cross section. The document discloses a single crystal pulling apparatus which is symmetrical, and in each of the first and second regions, the two superconducting coils generate magnetic lines of force in opposite directions. There is a control unit for the magnetic fields, para 0025 With regards to claim 2, the Takano et al reference teaches a magnet shape which is a hollowed rectangle, note fig 4a. With regards to claim 3, the Takano et al reference teaches a magnet height of up to 1000 mm, note para 0042. With respect to claims 5, 12, 13 and 15, the Takano et al reference teaches a crucible for seed pulling surrounded by a magnetic field, note figures. With regards to claim 8, the Takano et al reference teaches a magnet height of up to 1000 mm, note para 0042. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 4, 6, 7, 9 to 11, 14 and 16 to 18 is/are rejected under 35 U.S.C. 103 as being unpatentable over Takano et al (WO 2020225985). The Takano et al reference is relied on for the same reasons as stated, supra, and differs from the instant claim in the magnetic field flux density at various points. However, in the absence of unexpected results, it would have been obvious to one of ordinary skill in the art before the filing date of the instant invention to determine through routine experimentation the optimum, operable magnetic flux density at points in the crucible or melt in the Takano et al reference in order to have a uniformly mixed melt as the magnetic flux density in the prior art is a known variable.\ With regards to claim 7, the Takano et al reference teaches growing single crystal silicon, note page 1. With respect to claims 14, and 16 to 18 the Takano et al reference teaches a crucible for seed pulling surrounded by a magnetic field, note figures. Examiner’s Remarks The remaining references are merely cited of interest as showing the state of the art in magnetic czochralski growth. Any inquiry concerning this communication or earlier communications from the examiner should be directed to ROBERT M KUNEMUND whose telephone number is (571)272-1464. The examiner can normally be reached M-F 8:00 am to 4:30 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kaj Olsen can be reached at 571-272-1344. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. RMK /ROBERT M KUNEMUND/Primary Examiner, Art Unit 1714
Read full office action

Prosecution Timeline

May 29, 2024
Application Filed
Jun 03, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12680188
OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH
2y 6m to grant Granted Jul 14, 2026
Patent 12680190
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
2y 5m to grant Granted Jul 14, 2026
Patent 12680194
ORGANIC SOLID CRYSTAL ENCAPSULATION
2y 6m to grant Granted Jul 14, 2026
Patent 12680189
PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFER, AND MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFER
2y 4m to grant Granted Jul 14, 2026
Patent 12668874
LIQUID PRECURSOR RECOVERY MODULE
3y 1m to grant Granted Jun 30, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
96%
With Interview (+14.1%)
2y 11m (~9m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1330 resolved cases by this examiner. Grant probability derived from career allowance rate.

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