Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1714 1737 1781 1792 2818
This examiner grants 82% of resolved cases
Robert M. Kunemund works in Tech Center 2800 and Art Unit 1714. The examiner has managed 1341 resolved cases. The data reveals an allowance rate of 82.0 percent, indicating a high likelihood of grant for applicants. An interview lift of 13.2 percent shows that interviews provide a modest but positive benefit to the prosecution process.
The 13.2 percent lift suggests that communication with the examiner can help bridge gaps in the application. The median days to allowance is 1072, providing a clear timeline for applicants. With 1341 resolved cases, the examiner has a significant presence in this art unit. The 82.0 percent allowance rate and 1072 median days to allowance are key metrics for planning.
Practitioners should consider the 13.2 percent interview lift as a tool to navigate the 1341 cases resolved by this examiner. The high allowance rate of 82.0 percent suggests that the examiner is generally receptive to patentable subject matter. The 1072 median days to allowance offers a realistic expectation for the duration of the grant process. These figures collectively provide a favorable outlook for prosecution in Art Unit 1714.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18968834 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18726142 | ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR WAFER USING THE ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHODS OF THE SAME | Non-Final OA | STANLEY ELECTRIC CO., LTD. |
| 18690194 | METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS | Final Rejection | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18900134 | METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER | Non-Final OA | ASM IP Holding B.V. |
| 18932740 | SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE | Non-Final OA | Resonac Corporation |
| 18817323 | SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE | Non-Final OA | Resonac Corporation |
| 18559490 | EPITAXIAL NITRIDE FERROELECTRONICS | Final Rejection | The Regents of the University of Michigan |
| 18702872 | COLLOIDAL CRYSTAL AND PRODUCTION METHOD THEREFOR | Non-Final OA | MURATA MANUFACTURING CO., LTD. |
| 18238853 | Confined Growth of 2D Materials and Their Heterostructures | Final Rejection | Massachusetts Institute of Technology |
| 18939211 | SYNTHESIS OF MONOLAYER TRANSITION METAL DICHALCOGENIDES BY ELECTROSTATIC SELF-ASSEMBLY | Non-Final OA | California Institute of Technology |
| 18355747 | CHIRAL ORGANIC OPTOELECTRONIC MOLECULES WITH TUNABLE REFRACTIVE INDEX FOR IMPROVED CONTROL OF CIRCULARLY POLARIZED LIGHT PROPAGATION IN OPTICAL DEVICES | Non-Final OA | Meta Platforms Technologies, LLC |
| 18898556 | METHODS FOR CONTROLLING CRYSTALLINE PHASE OF MOLYBDENUM PRECURSORS AND RELATED COMPOSITIONS | Non-Final OA | ENTEGRIS, INC. |
| 18828024 | LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH REDUCED CRYSTALLOGRAPHIC STRESS | Non-Final OA | Wolfspeed, Inc. |
| 18898926 | GaN CRYSTAL AND GaN WAFER | Non-Final OA | MITSUBISHI CHEMICAL CORPORATION |
| 18865726 | FABRICATION OF LARGE AREA RADIATION DETECTORS AND SHIELDING VIA FIELDASSISTED SINTERING TECHNOLOGY (FAST) | Non-Final OA | THE PENN STATE RESEARCH FOUNDATION |
| 18867900 | METHOD FOR PRODUCING HETEROEPITAXIAL WAFER | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18257202 | TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE POLYMER TRANSFER LAYER AND THEIR FABRICATION | Final Rejection | DANMARKS TEKNISKE UNIVERSITET |
| 18434507 | SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE | Non-Final OA | SUMITOMO CHEMICAL COMPANY, LIMITED |
| 18752650 | GROWTH OF STRONTIUM TETRABORATE CRYSTALS | Final Rejection | KLA CORPORATION |
| 18850725 | METHOD FOR PREPARING 3C-SIC SINGLE CRYSTAL | Non-Final OA | Institute of Physics, Chinese Academy of Sciences |
| 18789879 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME | Non-Final OA | SOCPRA SCIENCES ET GENIE S.E.C. |
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