Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1714 1737 1781 1792 2818
This examiner grants 82% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18690194 | METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS | Final Rejection | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18784060 | REFLECTORS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING REFLECTORS, AND METHODS OF DEPOSITING MATERIAL LAYERS IN SEMICONDUCTOR PROCESSING SYSTEMS USING REFLECTORS | Non-Final OA | ASM IP Holding B.V. |
| 18559490 | EPITAXIAL NITRIDE FERROELECTRONICS | Final Rejection | The Regents of the University of Michigan |
| 18695073 | METHOD FOR PRODUCING HETEROEPITAXIAL FILM | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18708259 | GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE | Non-Final OA | TOKUYAMA CORPORATION |
| 18238853 | Confined Growth of 2D Materials and Their Heterostructures | Non-Final OA | Massachusetts Institute of Technology |
| 18779927 | TEMPERATURE AND FILM ADJUSTMENTS FOR PROCESS CHAMBERS, AND RELATED SYSTEMS AND METHODS | Non-Final OA | Applied Materials, Inc. |
| 18702872 | COLLOIDAL CRYSTAL AND PRODUCTION METHOD THEREFOR | Non-Final OA | MURATA MANUFACTURING CO., LTD. |
| 18811164 | SUBSTRATE COATED WITH A SILICON-CARBIDE (SIC) LAYER AND A METHOD OF MANUFACTURING THE SAME | Non-Final OA | STMicroelectronics International N.V. |
| 18752650 | GROWTH OF STRONTIUM TETRABORATE CRYSTALS | Non-Final OA | KLA CORPORATION |
| 18588822 | SYSTEM AND METHOD FOR GROWTH OF QUASI-PHASE MATCHED STRONTIUM TETRABORATE AND LITHIUM TRIBORATE CRYSTALS FOR FREQUENCY CONVERSION | Non-Final OA | KLA Corporation |
| 18865726 | FABRICATION OF LARGE AREA RADIATION DETECTORS AND SHIELDING VIA FIELDASSISTED SINTERING TECHNOLOGY (FAST) | Non-Final OA | THE PENN STATE RESEARCH FOUNDATION |
| 18932740 | SiC INGOT AND METHOD FOR MANUFACTURING SiC SUBSTRATE | Non-Final OA | Resonac Corporation |
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