Prosecution Insights
Prosecution Insights
Listed by the USPTO as KUNEMUND, ROBERT M
Tech Center 2800 • Art Units: 1714 1737 1781 1792 2818
This examiner grants 82% of resolved cases
Robert M. Kunemund works in Tech Center 2800 and Art Unit 1714. The examiner has managed 1341 resolved cases. The data reveals an allowance rate of 82.0 percent, indicating a high likelihood of grant for applicants. An interview lift of 13.2 percent shows that interviews provide a modest but positive benefit to the prosecution process.
The 13.2 percent lift suggests that communication with the examiner can help bridge gaps in the application. The median days to allowance is 1072, providing a clear timeline for applicants. With 1341 resolved cases, the examiner has a significant presence in this art unit. The 82.0 percent allowance rate and 1072 median days to allowance are key metrics for planning.
Practitioners should consider the 13.2 percent interview lift as a tool to navigate the 1341 cases resolved by this examiner. The high allowance rate of 82.0 percent suggests that the examiner is generally receptive to patentable subject matter. The 1072 median days to allowance offers a realistic expectation for the duration of the grant process. These figures collectively provide a favorable outlook for prosecution in Art Unit 1714.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18968834 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18900134 | METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER | Non-Final OA | ASM IP Holding B.V. |
| 18726142 | ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR WAFER USING THE ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHODS OF THE SAME | Non-Final OA | STANLEY ELECTRIC CO., LTD. |
| 18690194 | METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS | Final Rejection | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18238853 | Confined Growth of 2D Materials and Their Heterostructures | Final Rejection | Massachusetts Institute of Technology |
| 18817323 | SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE | Non-Final OA | Resonac Corporation |
| 18559490 | EPITAXIAL NITRIDE FERROELECTRONICS | Final Rejection | The Regents of the University of Michigan |
| 18702872 | COLLOIDAL CRYSTAL AND PRODUCTION METHOD THEREFOR | Non-Final OA | MURATA MANUFACTURING CO., LTD. |
| 18939211 | SYNTHESIS OF MONOLAYER TRANSITION METAL DICHALCOGENIDES BY ELECTROSTATIC SELF-ASSEMBLY | Non-Final OA | California Institute of Technology |
| 18894708 | GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SAME | Non-Final OA | NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM |
| 18898556 | METHODS FOR CONTROLLING CRYSTALLINE PHASE OF MOLYBDENUM PRECURSORS AND RELATED COMPOSITIONS | Non-Final OA | ENTEGRIS, INC. |
| 18828024 | LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH REDUCED CRYSTALLOGRAPHIC STRESS | Non-Final OA | Wolfspeed, Inc. |
| 18865726 | FABRICATION OF LARGE AREA RADIATION DETECTORS AND SHIELDING VIA FIELDASSISTED SINTERING TECHNOLOGY (FAST) | Non-Final OA | THE PENN STATE RESEARCH FOUNDATION |
| 18898926 | GaN CRYSTAL AND GaN WAFER | Non-Final OA | MITSUBISHI CHEMICAL CORPORATION |
| 18867900 | METHOD FOR PRODUCING HETEROEPITAXIAL WAFER | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18977640 | EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN FILMS BY REACTIVE ANNEALS | Non-Final OA | Alliance for Sustainable Energy, LLC |
| 18257202 | TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE POLYMER TRANSFER LAYER AND THEIR FABRICATION | Final Rejection | DANMARKS TEKNISKE UNIVERSITET |
| 18434507 | SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE | Non-Final OA | SUMITOMO CHEMICAL COMPANY, LIMITED |
| 18752650 | GROWTH OF STRONTIUM TETRABORATE CRYSTALS | Final Rejection | KLA CORPORATION |
| 18990573 | METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS | Non-Final OA | OSAKA UNIVERSITY |
| 18940294 | SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE DURING A CRYSTAL GROWTH PROCESS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18666359 | SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER | Non-Final OA | GlobalWafers Co., Ltd. |
| 18895354 | METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALS | Non-Final OA | BOYA ADVANCED MATERIALS CO., LTD. |
| 18925295 | CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELECTIVE GROWTH ON HEXAGONAL SiC SUBSTRATES | Non-Final OA | Mainstream Engineering Corporation |
| 18924686 | METHOD AND APPARATUS FOR LASER ANNEALING | Non-Final OA | Coherent LaserSystems GmbH & Co. KG |
| 18885761 | METHOD FOR PURIFYING GRAPHITE MATERIAL, METHOD FOR PURIFYING GRAPHITE CRUCIBLE BASED ON SILICON CARBIDE CRYSTAL GROWTH, AND METHOD FOR MANUFACTURING HIGH-PURITY SILICON CARBIDE | Non-Final OA | TAISIC MATERIALS CORP. |
| 18885756 | DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL | Non-Final OA | TAISIC MATERIALS CORP. |
| 18789879 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME | Non-Final OA | SOCPRA SCIENCES ET GENIE S.E.C. |
| 18710633 | USES OF SPINEL-TYPE SINGLE CRYSTALS AS FERROELECTRICS AND RELAXOR FERROELECTRICS, ENERGY STORAGE MATERIAL AND RECHARGEABLE ENERGY STORAGE PRODUCT | Final Rejection | UNIVERSITY OF MACAU |
| 18695648 | PREPARATION METHOD FOR COMPOSITE SUBSTRATE | Non-Final OA | TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy82.1% of resolved applications examined by Robert M Kunemund were allowed (1,344 resolved cases), compared with 50.4% across Art Unit 1714 over the last five years.
This examiner's interview lift is +13.2 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Robert M Kunemund took 1,071 days on average from filing to allowance.
Robert M Kunemund examines applications in Art Unit 1714 in Tech Center 2800 (Semiconductors, Circuits & Optics).