DETAILED ACTION
Notice of AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Specifications
The title is objected to because a more descriptive title is requested.
Claim Rejections – 35 U.S.C. § 112(b)
The following is a quotation of 35 U.S.C. § 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
Claims 1-11 are rejected under 35 U.S.C. § 112(b) or pre-AIA 35 U.S.C. § 112, second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor, or for pre-AIA the applicant, regards as the invention.
As to claim 1, it is unclear what is meant by “different doping concentrations or concentration variations in different sub-layers”. The limitations “different doping concentrations” and “concentration variations” seem redundant and it is unclear how they differ from each other.
Indication of Allowable Subject Matter
The following is a statement of reasons for the indication of allowable subject matter: claims 12-20 are indicated as being allowable because prior art fails to teach “the P-type semiconductor layer comprises a first electron-blocking layer, a first hole- injecting layer, a second electron-blocking layer and a second hole-injecting layer which are sequentially stacked on a surface of the multi-quantum well light-emitting layer; an energy level of the first electron-blocking layer is lower than that of the second electron- blocking layer; and the first electron-blocking layer comprises a plurality of sub-layers” (claim 12).
Claims 1-11 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action.
As to claim 1, Wang (CN 110707188 A), machine translation provided and hereafter “Wang”, is the closest prior art. Wang teaches in FIG. 1 a substrate 10; and an N-type semiconductor layer 40, a multi-quantum well light-emitting layer 60, and a P-type semiconductor layer 70 is doped therein with a P-type impurity Mg, and the P-type impurity Mg has different doping concentrations in different sub-layers of the P-type semiconductor layer (layer 712 has lightly doped Mg while layer 713 has heavy doped Mg). See Wang, pg. 7. However, Wang does not teach the limitations of the substituent parts of the P-type semiconductor layer nor the limitations of the Mg-modulation layer nor the limitations of the average doping concentration relationship.
Conclusion
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/SUBERR L CHI/Primary Examiner, Art Unit 2893
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