MULTIFUNCTIONAL OPTOELECTRONIC DEVICE

DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-15 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Chunxiong et al. (Chunxiong) “Bidirectional optical signal transmission between two identical devices perovskite diodes”. In regards to claim 1, Chunxiong (Figs. 1a, 1b, 2b and associated text) discloses a multifunctional optoelectronic device (OLED, dual-function perovskite diode) comprising: at least one photo-responsive perovskite light-emitting diode (Fig. 1a) arranged to alternatingly operate in emission mode and sensing mode, wherein said at least one perovskite LED (Fig. 1a) comprises a cathode (glass/ITO), an electron transport layer (ZNO/PEIE) having a lowest unoccupied molecular orbital (LUMO) level and a highest occupied molecular orbital (HOMO) level, a perovskite layer (perovskite) having a conduction band (CB) and a valence band (VB), a hole transport layer (TFB/MoOx) having a LUMO level and a HOMO level, and an anode (Au), wherein said LUMO level of said ETL (3) is lower than said CB bottom of said perovskite layer, and said HOMO level of said HTL (ZNO/PEIE) is higher than said VB top of said perovskite layer (perovskite); said multifunctional device (OLED, dual-function perovskite diode) further comprising a sensing circuit (not shown) comprising a sensor arranged to determine the electric current through said at least one perovskite LED (Fig. 1a) and a switch arranged to select between said emission mode and said sensing mode of said perovskite LED (Fig. 1a) as a function of said electric current through said at least one perovskite LED (Fig. 1a). Chunxiong discloses “As we show in Fig. 1b, when the diode works under a positive bias larger than the turn-on voltage, the electrons and holes are injected into the perovskite emitters and generate light emission via efficient radiative recombination. Similarly, when the diode works under a zero or reverse bias, upon excitations by photons with energy equal to or higher than the bandgap of the perovskite, the photo-generated carriers are separated and collected as an electrical signal”. In Fig. 2b, the transient EL intensity as well as the current intensity are shown when each cell switches between both side. Therefore, there is implicitly a sensing circuit as claimed by the Applicant. In regards to claim 2, Chunxiong (Figs. 1a, 1b, 2b and associated text) discloses wherein said perovskite layer (perovskite) comprises a metal halide perovskite (page 156, left column, page 157, left column). In regards to claim 3, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said metal halide perovskite is a metal halide perovskite having a general formula AM.sup.IIX.sub.3, a double perovskite having general formula A.sub.2M.sup.IM.sup.IIIX.sub.6, a layered perovskite having general formula A′A.sub.nM.sub.nX.sub.3n+1 or combination thereof . In regards to claim 4, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses, wherein A is a small monovalent cation, A′ is a is a large monovalent cation, M.sup.I is a monovalent metal cation, M.sup.II is a divalent metal cation, M.sup.III is a trivalent metal cation, and X is an anion. In regards to claim 5, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said small monovalent cation is selected from a group consisting of methylammonium (MA.sup.+), formamidinium (FA.sup.+), Cs.sup.+ and combination thereof. In regards to claim 6, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said large monovalent cation is an aliphatic or aromatic alkylammonium. In regards to claim 7, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said monovalent metal cation is Ag+, and/or said divalent metal cation is selected from a group consisting of Pb.sup.2+, Sn.sup.2+, Ga.sup.2+, Ge.sup.2+ and combinations thereof, and/or said trivalent metal cation is selected from a group consisting of Bi.sup.3+, In.sup.3+, Sb.sup.3+ and combinations thereof. In regards to claim 8, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said anion is a halide anion. In regards to claim 9, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said anion is a mixture of bromide (Br.sup.−), iodide (I.sup.−) and chloride (Cl.sup.−). In regards to claim 10, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said perovskite layer (perovskite) comprises a passivation agent. In regards to claim 11, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said passivation agent is 2,2′-(ethylenedioxy)diethylamine (EDEA), 2,2′-(oxybis(ethylenoxy))diethylamine (ODEA), 5-aminovaleric acid (5-AVA), 5-aminovaleric acid hydroiodide (5-AVAI), or 5-aminovaleric acid hydrobromide (5-AVABr) or combination thereof. In regards to claim 12, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said multifunctional device (10) comprises a driving circuit, and wherein said sensing circuit is integrated into said driving circuit. In regards to claim 13, Chunxiong (page 157, left column, Figs. 1a, 1b, 2b and associated text) discloses wherein the thickness of said ETL (ZNO/PEIE) and/or said HTL (5) is from 20 nm to 100 nm, and wherein the thickness of said perovskite layer (perovskite) is from 50 nm to 500 nm. In regards to claim 14, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said ETL (ZNO/PEIE) is polyethylenimine ethoxylated (PEIE) modified or pure zinc oxide (ZnO), tin oxide (SnO.sub.2) or titanium oxide (TiO.sub.2). In regards to claim 15, Chunxiong (Methods section, Figs. 1a, 1b, 2b and associated text) discloses wherein said HTL (TFB/MoOx) is poly(9,9-dioctylfluorene-co-N-(4-sec-butylphenyl)-diphenylamine) (TFB)/molybdenum oxide (MoO.sub.x). Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. All references listed in 892 could have been used as primary references and disclose the materials of the ETL, HTL and perovskite alone and/or in combination with one another. Gao et al. (US 2024/0081144 A1) could possibly be excluded due to common inventors and assignee. Examiner suggests reviewing all references before responding so that potential amendments, if any, distinguish the Applicant’s invention from the current prior art of record. This will assist in compact prosecution. Any inquiry concerning this communication or earlier communications from the examiner should be directed to TELLY D GREEN whose telephone number is (571)270-3204. The examiner can normally be reached M-F 8am-5pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Manno can be reached at 571-272-2339. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. TELLY D. GREEN Examiner Art Unit 2898 /TELLY D GREEN/Primary Examiner, Art Unit 2898 August 17, 2026