Prosecution Insights
Last updated: October 02, 2026
Application No. 18/745,894

APPARATUSES AND METHODS FOR HALF-PAGE MODES OF MEMORY DEVICES

Non-Final OA §102
Filed
Jun 17, 2024
Priority
Sep 05, 2023 — provisional 63/580,518
Examiner
NGUYEN, VAN THU T
Art Unit
2824
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Micron Technology Inc.
OA Round
3 (Non-Final)
83%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allowance Rate
800 granted / 965 resolved
+14.9% vs TC avg
Moderate +6% lift
Without
With
+6.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
25 currently pending
Career history
998
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
46.0%
+6.0% vs TC avg
§102
32.4%
-7.6% vs TC avg
§112
14.7%
-25.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 965 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This Office Action is in response to 07/23/2026 Amendment and RCE. Claims 1-5, 7-11, 13-18, 20 are pending and examined. Claims 6, 12 and 19 have been cancelled. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-5, 7-11, 13-18, 20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US 11,728,003 to Suh et al. (hereafter Suh). Regarding independent claim 1, Suh teaches a system comprising: a controller including an error correction circuit (FIG. 3: a system ECC decoder 131 and a system ECC encoder 132), wherein the controller is configured to provide a plurality of data bits and the error correction circuit is configured to provide a plurality of module parity bits based on the plurality of data bit as part of a write operation (see 9:58-10:6); and a memory module comprising: a plurality of memory devices (FIG. 1: memories 150-1 to 150-4), each memory device of the plurality configured to store a portion of the plurality of data bits and further store a portion of the plurality of module parity bits (FIG. 3: storing data in portion 932 and system ECCs in portion 934). Regarding dependent claim 2, Suh teaches wherein the memory module comprises: a plurality of channels, each associated with one of the plurality of memory devices (see FIG. 1), each of the plurality of channels comprising a plurality of data terminals, wherein a first set of the plurality of data terminals is configured to receive the portion of the plurality of data bits (FIG. 3: terminals DQ[0:7] for data) and an additional one of the plurality of data terminals is configured to receive the portion of the plurality of module parity bits as part of the write operation (FIG. 3: terminal DM for parity bits in write operation, see 7:60-8:3). Regarding dependent claim 3, Suh teaches wherein the plurality of memory devices each include a mode register (FIG. 3: mode register 179) configured to put the memory module in a first mode or a second mode, wherein in the first mode there are a first number of the plurality of module parity bits and in the second mode there are a second number of the plurality of module parity bits (see FIG. 9). Regarding dependent claim 4, Suh teaches wherein the first number of the plurality of module parity bits enables the error correction circuit to perform a first level of error correction and wherein the second number of the plurality of module parity bits enables the error correction circuit to perform a second level of error correction (FIG. 9: e.g. mode 0010B and mode 0011B perform ECC parity [0:23] and ECC parity [0:15], respectively). Regarding dependent claim 5, Suh teaches wherein the controller configured to provide a plurality of metadata bits as part of the write operation, and wherein the error correction circuit is configured to generate the plurality of module parity bits based on the plurality of data bits and the plurality of metadata bits (FIG. 21: metadata stored in portion 934, see 20:5-23). Regarding dependent claim 6, Suh teaches wherein the memory module is configured to operate in an 8x2p3 mode (the mode is regarding how data and module parity are stored in the memory array, see FIGS. 17-18 as how data and parity are stored). Regarding independent claim 8, Suh teaches an apparatus comprising: a module settings register (FIG. 3: mode register 179) configured to set the apparatus in a first mode or a second mode (FIG. 9: e.g. mode 0010B and mode 0011B perform ECC parity [0:23] and ECC parity [0:15], respectively); a plurality of memory devices (FIG. 1: memories 150-1 to 150-4), each memory device of the plurality configured to receive and store both a portion of a plurality of data bits and a portion of a plurality of module parity bits (FIG. 3: storing data in portion 932 and system ECCs in portion 934), wherein the plurality of module parity bits is a first number of module parity bits in the first mode or a second number of module parity bits in the second mode; and a plurality of pseudo-channels, each associated with one of the plurality of memory devices, each of the plurality of pseudo-channels including a first set of data terminals configured to transmit the associated portion of the plurality of data bits and an additional data terminal configured to transmit the associated portion of the plurality of module parity bits (FIG. 3: comprising DQ[0:7] for data and DM for parity bits in write operation, see 7:60-8:3). Regarding dependent claim 9, Suh teaches wherein each of the plurality of memory devices has a first capacity in the first mode or a second capacity in the second mode (FIG. 9: higher ECC parity bits mean lower data capacity and vice versa). Regarding dependent claim 10, Suh teaches wherein each of the plurality of memory devices includes an error correction circuit configured to generate a plurality of parity bits based on the stored portion of the plurality of data bits and the stored portion of the plurality of module parity bits (FIG. 3: a system ECC decoder 131 and a system ECC encoder 132). Regarding dependent claim 11, Suh teaches wherein the first number of module parity bits enables a first level of correction of the plurality of data bits and the second number of module parity bits enables a second level of correction of the plurality of data bits (FIG. 9: e.g. mode 0010B and mode 0011B perform ECC parity [0:23] and ECC parity [0:15], respectively). Regarding dependent claim 13, Suh teaches wherein the module settings register is configured to implicitly allow a user to select the first mode or the second mode (FIG. 3: user is allowed to set the mode register 179 via host, see 22:63-23:6). Regarding dependent claim 14, Suh teaches wherein a number of bits of the plurality of data bits is the same in the first mode and the second mode (when the data and parity data are stored in separated rows as shown in FIG. 18, number of bits read corresponding to a row address in each of the modes of FIG. 9 would be the same). Regarding independent claim 15, Suh teaches a method comprising: selecting a first mode or a second mode for a memory module (FIG. 9: e.g. mode 0010B and mode 0011B perform ECC parity [0:23] and ECC parity [0:15], respectively); selecting a first portion or a second portion of a word line in each of the plurality of memory devices (FIG. 3: data portion 932 and system ECC portion 934; FIG. 17 shows data portion and system ECC portion are stored on the same word line); storing a respective portion of a plurality of data bits along the selected one of the first portion or the second portion of the word line and further storing a respective portion of a plurality of module parity bits along the non-selected one of the first portion or the second portion of the word line on each of a plurality of memory devices of the memory module (see FIG. 17), wherein the plurality of module parity bits is a first number of bits in the first mode and a second number of bits in the second mode (i.e. parity bits corresponding to ECC mode). Regarding dependent claim 16, Suh teaches wherein the first number of module parity bits enables correction of a first number of the plurality of data bits and wherein the second number of module parity bits enables correction of a second number of the plurality of data bits (because they are ECC parity bits). Regarding dependent claim 17, Suh teaches reading the plurality of data bits and the plurality of module parity bits over a plurality of channels, each associated with one of the plurality of memory devices, wherein respective portion of the plurality of data bits is read over a first and a second data terminal of the channel (FIG. 3: terminals DQ[0:7] for data) and the respective portion of the plurality of metadata bits is read over a third data terminal of the channel (FIG. 3: terminal RDQS for parity bits in read operation, see 7:60-8:3). Regarding dependent claim 18, Suh teaches correcting the portion of the plurality of data bits associated with one of the plurality of memory devices in the first mode or correcting less than the portion of the plurality of data bits associated with one of the plurality of memory devices in the second mode (FIG. 9: e.g. mode 0010B and mode 0011B perform ECC parity [0:23] and ECC parity [0:15], respectively. It is obvious that mode with ECC parity [0:15] correcting less data bits than mode ECC parity [0023]). Regarding dependent claim 20, Suh teaches changing between the first mode and the second mode of the memory module (FIG. 3: when host is configured to set mode in register 179, see 22:63-23:6). Response to Arguments Applicant’s arguments with respect to claim(s) 1-5, 7-11, 13-18, 20 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to VANTHU NGUYEN whose telephone number is (571)272-1881. The examiner can normally be reached M-F: 7:00AM - 3:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard Elms can be reached at (571) 272-1869. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. August 27, 2026 /VANTHU T NGUYEN/Primary Examiner, Art Unit 2824
Read full office action

Prosecution Timeline

Jun 17, 2024
Application Filed
Nov 21, 2025
Non-Final Rejection mailed — §102
Jan 29, 2026
Response Filed
Feb 23, 2026
Final Rejection mailed — §102
Jul 23, 2026
Request for Continued Examination
Jul 27, 2026
Response after Non-Final Action
Sep 01, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12725675
READ COMMAND FAULT DETECTION IN A MEMORY SYSTEM
2y 7m to grant Granted Sep 01, 2026
Patent 12720873
TRANSCEIVER ARCHITECTURE WITH LOW KICK-BACK NOISE AND PAD CAP
3y 0m to grant Granted Aug 25, 2026
Patent 12706140
Buried Metal Techniques for Memory Applications
3y 9m to grant Granted Aug 11, 2026
Patent 12700438
IN-MEMORY COMPUTATION DEVICE FOR IMPLEMENTING AT LEAST A MULTILAYER NEURAL NETWORK
2y 2m to grant Granted Aug 04, 2026
Patent 12682978
SELF-CALIBRATION IN A MEMORY DEVICE
2y 3m to grant Granted Jul 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

3-4
Expected OA Rounds
83%
Grant Probability
89%
With Interview (+6.4%)
2y 2m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 965 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month