Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2132 2824 2827
This examiner grants 83% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18977329 | MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18914082 | UNIT CELL CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18746974 | BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18670875 | HIGH-BANDWIDTH MEMORY DEVICE AND OPERATION METHOD THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18783132 | MEMORY DEVICE AND OPERATION THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18777874 | MANAGING ERASE OPERATIONS IN MEMORY SYSTEMS | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18814421 | SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS | Final Rejection | University of Rochester |
| 18519680 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18509301 | DATA STORAGE DEVICE AND OPERATING METHOD THEREOF | Final Rejection | SK hynix Inc. |
| 18988241 | ENHANCED PROACTIVE READ DISTURB DETECTION IN A MEMORY SUB-SYSTEM | Non-Final OA | Micron Technology, Inc. |
| 18962783 | PROGRAMMABLE COLUMN ACCESS | Non-Final OA | Micron Technology, Inc. |
| 18888899 | Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability | Non-Final OA | Micron Technology, Inc. |
| 18783764 | NEGATIVE FEEDBACK THRESHOLD COMPENSATION FOR SENSE AMPLIFIERS | Non-Final OA | Micron Technology, Inc. |
| 18781618 | READ VOLTAGE OVERDRIVE IN READ RECOVERY | Non-Final OA | Micron Technology, Inc. |
| 18777441 | ON-DIE HEATER DEVICES FOR MEMORY DEVICES AND MEMORY MODULES | Final Rejection | Micron Technology, Inc. |
| 18768747 | PRESERVING BLOCKS EXPERIENCING PROGRAM FAILURE IN MEMORY DEVICES | Final Rejection | Micron Technology, Inc. |
| 18407129 | USING A SUBTHRESHOLD VOLTAGE FOR MAPPING IN MEMORY | Non-Final OA | Micron Technology, Inc. |
| 18456152 | Methods and Apparatus for Probabilistic Refresh in Volatile Memory Devices | Non-Final OA | Micron Technology, Inc. |
| 17898392 | DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 18447826 | ONE-TIME PROGRAMMABLE MEMORY BIT CELL COMPRISING TWO OR MORE ANTIFUSE MEMORY CELLS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18796752 | NEUROMORPHIC DEVICE AND OPERATION METHOD THEREOF | Final Rejection | SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION |
| 18757932 | APPARATUS AND METHODS FOR REFERENCE READ TECHNIQUES FOR THRESHOLD SELECTOR DEVICE MEMORY | Non-Final OA | Sandisk Technologies, Inc. |
| 18464262 | MULTI-CIRCUIT CONTROL SYSTEM AND READING METHOD FOR STATUS INFORMATION THEREOF | Non-Final OA | MACRONIX International Co., Ltd. |
| 18988611 | NOISE REDUCTION FOR MIXED IN-MEMORY COMPUTING | Non-Final OA | OmniVision Technologies, Inc. |
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