Prosecution Insights
Last updated: May 29, 2026
Application No. 18/757,416

SEMICONDUCTOR PACKAGE AND METHOD FOR IDENTIFYING INTEGRATED CIRCUIT LAYERS IN STACK

Non-Final OA §102
Filed
Jun 27, 2024
Priority
Jun 30, 2023 — provisional 63/511,432
Examiner
NGUYEN, HOAI AN D
Art Unit
2858
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Ap Memory Technology Corporation
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
4m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
623 granted / 723 resolved
+18.2% vs TC avg
Moderate +11% lift
Without
With
+10.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
15 currently pending
Career history
735
Total Applications
across all art units

Statute-Specific Performance

§101
2.2%
-37.8% vs TC avg
§103
56.9%
+16.9% vs TC avg
§102
26.4%
-13.6% vs TC avg
§112
4.2%
-35.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 723 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on January 17, 2025 is being considered by the examiner. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-3, 6 and 11-15 are rejected under 35 U.S.C. 102 (a)(1) as being anticipated by Gorman et al. (US 8,872,322 B2). Gorman et al. teaches a stacked chip module with integrated circuit chips comprising: PNG media_image1.png 342 645 media_image1.png Greyscale PNG media_image2.png 308 590 media_image2.png Greyscale PNG media_image3.png 403 655 media_image3.png Greyscale PNG media_image4.png 407 570 media_image4.png Greyscale With regard to claim 1, a semiconductor package (FIG. 1, stacked chip module 100) comprising: a plurality of integrated circuit (IC) substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) stacked one above another (FIG. 1); and a conductive structure (FIGS. 2 and 3, through-substrate base plate channels 131, 132 and 182) penetrating through the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n), wherein each of the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) comprises an identification circuit (FIG. 1, enumerating circuit 180) coupled to the conductive structure (FIGS. 2 and 3, through-substrate base plate channels 131, 132 and 182), and each identification circuit (FIG. 1, enumerating circuit 180) is configured to identify a corresponding IC substrate (FIG. 1, substrate 105 of each integrated circuit chips 101a-101n) by receiving an input signal (FIG. 3 in view of FIG. 1, enumeration signal 185) from the conductive structure (FIGS. 2 and 3, through-substrate base plate channels 131, 132 and 182) and accordingly generating an identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the corresponding IC substrate (FIG. 1, substrate 105 of each integrated circuit chips 101a-101n) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). With regard to claim 2, respective identification circuits (FIG. 1, enumerating circuits 180) of the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) are configured to generate respective identifiers (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192 from respective enumerating circuits 180) sequentially in a spatial arrangement order of the IC substrates (FIG. 3 in view of FIG. 1, substrates 105 of integrated circuit chips 101a-101n) (Column 7, lines 4-43) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). With regard to claim 3, the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) comprises: a first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n), wherein when the input signal indicates an address corresponding to the identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n), the identification circuit (FIG. 1, enumerating circuit 180) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n) is configured to send a stimulus signal when receiving the input signal; and a second IC substrate (FIG. 1, substrate 105 of another one of the integrated circuit chips 101a-101n) adjacent to the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n), the identification circuit (FIG. 1, enumerating circuit 180) of the second IC substrate (FIG. 1, substrate 105 of another one of the integrated circuit chips 101a-101n) is configured to receive the stimulus signal and generate the identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the second IC substrate (FIG. 1, substrate 105 of another one of the integrated circuit chips 101a-101n) (Column 7, lines 4-43) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). With regard to claim 6, the identification circuit (FIG. 1, enumerating circuit 180) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n) comprises: a storage device (FIG. 4 in view of FIG. 3, register 186), configured to store the identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n); a coupling circuit (FIG. 3, latch 183), configured to generate the stimulus signal according to a drive signal (FIG. 3 in view of FIG. 1, enumeration signal 185); and a processing circuit (FIG. 3 in view of FIG. 1, counter 181 and register 186), coupled to the storage device (FIG. 4 in view of FIG. 3, register 186) and the coupling circuit (FIG. 3, latch 183), the processing circuit (FIG. 3 in view of FIG. 1, counter 181 and register 186) being configured to generate the drive signal (FIG. 3 in view of FIG. 1, enumeration signal 185) by determining whether the input signal indicates the address corresponding to the identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n) (Column 7, lines 4-43) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). With regard to claim 11, the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) comprises: a first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n); and a plurality of second IC substrates (FIG. 1, substrate 105 of the other ones of the integrated circuit chips 101a-101n) identical to each other, each second IC substrate (FIG. 1, substrate 105 of another one of the integrated circuit chips 101a-101n) being non-identical to the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n), wherein the identification circuit (FIG. 1, enumerating circuit 180) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n) is configured to identify the identifier (FIG. 4 in view of FIG. 3, first control signal 191 and second control signal 192) of the first IC substrate (FIG. 1, substrate 105 of one of the integrated circuit chips 101a-101n) before any of the second IC substrate (FIG. 1, substrate 105 of the other ones of the integrated circuit chips 101a-101n)s (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) is identified (Column 5, lines 22-42 and column 9, lines 11-47) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). It is clearly seen in column 5, lines 22-42 and column 9, lines 11-47 and FIGS. 1 and 2 that the interconnect structure 130 (e.g., using multiplexer 136-138 and through base plate channel 131-132) located in a substrate 105 on each chip 101a-101n may include a combination of different types of interconnect structures (emphasis added); that is, it is a desirable design choice and/or an intended use to configure “a plurality of second IC substrates identical to each other, each second IC substrate being non-identical to the first IC substrate”. With regard to claim 12, a control circuit (FIGS. 2 and 3, first controller 111 and second controller 112), coupled to the conductive structure (FIGS. 2 and 3, through-substrate base plate channels 131, 132 and 182), the control circuit (FIGS. 2 and 3, first controller 111 and second controller 112) being configured to send the input signal to the conductive structure (FIGS. 2 and 3, through-substrate base plate channels 131, 132 and 182), wherein the control circuit (FIGS. 2 and 3, first controller 111 and second controller 112) is located in one of the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n), or located outside the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) (From column 5, line 60 to column 8, line 52). With regard to claim 13, each of the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) is dynamic random-access memory (Column 9, lines 11-47). With regard to claim 14, the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) are identical to each other (FIG. 1, and from column 1, line 64 to column 2, line 3). With regard to claim 15, at least one of the IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) is non-identical to the other IC substrates (FIG. 1, substrates 105 of integrated circuit chips 101a-101n) (Column 5, lines 22-42 and column 9, lines 11-47) (For more details, please read: Abstract; from column 1, line 64 to column 3, line 13; and from column 4, line 36 to column 9, line 5). It is clearly seen in column 5, lines 22-42 and column 9, lines 11-47 and FIGS. 1 and 2 that the interconnect structure 130 (e.g., using multiplexer 136-138 and through base plate channel 131-132) located in a substrate 105 on each chip 101a-101n may include a combination of different types of interconnect structures (emphasis added); that is, it is a desirable design choice and/or an intended use to configure “a plurality of second IC substrates identical to each other, each second IC substrate being non-identical to the first IC substrate”. Allowable Subject Matter Claims 16-20 are allowed. The following is an examiner’s statement of reasons for allowance: With regard to claim 16, the prior art does not teach, suggest or render obvious the claimed method for identifying integrated circuit (IC) substrates in a stack in combination as claimed including: When each of the IC substrates is in a non-selectable state, turning a first IC substrate of the IC substrates from the non-selectable state to a selectable state by assigning a first identifier to the first IC substrate; Applying an input signal to a conductive structure penetrating through the IC substrates in the stack; and Identifying a second IC substrate of the IC substrates by referring the input signal and generating a second identifier, wherein the second IC substrate is adjacent to the first IC substrate. With regard to claims 17-20, these claims are allowed at least by virtue of their dependencies directly or indirectly from the base claim. Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.” Claims 4, 5 and 7-10 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Applicants’ attention is invited to the followings whose inventions disclose similar devices. Matsuoka et al. (JP 2010-093199 A) teaches a method of manufacturing a laminated semiconductor device. Kamins (KR 10-1421665 B1) teaches a methods of forming through-substrate interconnects. CONTACT INFORMATION Any inquiry concerning this communication or earlier communications from the examiner should be directed to HOAI-AN D. NGUYEN whose telephone number is (571) 272-2170. The examiner can normally be reached MON-THURS (7:00 AM - 5:00 PM). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, LEE E. RODAK can be reached at 571-270-5628. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. HOAI-AN D. NGUYEN Primary Examiner Art Unit 2858 /HOAI-AN D. NGUYEN/ Primary Examiner, Art Unit 2858
Read full office action

Prosecution Timeline

Jun 27, 2024
Application Filed
May 06, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12631696
Device For Detecting Faults In High-Voltage Transmission Lines
2y 6m to grant Granted May 19, 2026
Patent 12631673
MEASUREMENT APPARATUS AND MEASUREMENT METHOD
2y 0m to grant Granted May 19, 2026
Patent 12618886
Power Conversion Apparatus, Deterioration Determination Method for Smoothing Capacitor
2y 5m to grant Granted May 05, 2026
Patent 12613292
POWER SUPPLY DEVICE, AND CONTROL METHOD FOR POWER SUPPLY DEVICE
2y 1m to grant Granted Apr 28, 2026
Patent 12601769
INPUT ISOLATED VOLTAGE MONITOR
2y 9m to grant Granted Apr 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
97%
With Interview (+10.6%)
2y 3m (~4m remaining)
Median Time to Grant
Low
PTA Risk
Based on 723 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month