DETAILED ACTION
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claims 1-20 are pending in this Application.
Priority
This application is a Continuation of application Ser. No. 18/302,215, filed on Apr. 18, 2023, which is a Continuation of application Ser. No. 15/901,970, filed on Feb. 22, 2018, which claims the benefit of U.S. Provisional Application No. 62/583,062, filed on Nov. 8, 2017, the entirety of which are incorporated by reference herein
Response to Amendment
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13.
The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer.
Instant Application 18/765,661
Parent patent Application 12057301
A fabrication system, comprising:
a processing tool, comprising:
a RF sensor configured to wirelessly detect intensity of a RF signal;
a computation device configured to extract statistical characteristics with a sampling rate; and
a fault detection and classification (FDC) system,
wherein when the detected intensity of the RF signal exceeds a threshold value or a threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage,
wherein when the detected intensity of the RF signal in a first semiconductor manufacturing process is greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process;
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process.
2. The fabrication system as claimed in claim 1, wherein the extracted statistical characteristics comprise a maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the intensity of the RF signal.
3. The fabrication system as claimed in claim 1, wherein the RF sensor comprises an RF current sensor which generates an inducting current corresponding to the intensity of the RF signal through electro-magnetic induction.
4. The fabrication system as claimed in claim 1, wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are etching processes, and the RF signal is transitioned during a transition period between the first and second semiconductor manufacturing process, and no semiconductor manufacturing process is performed during the transition period.
5. The fabrication system as claimed in claim 4, wherein the processing tool is configured to switch from the first semiconductor manufacturing process to the second semiconductor manufacturing process during the transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing processes.
6. The fabrication system as claimed in claim 1, wherein when the sampling rate is increased, the threshold value is decreased.
7. The fabrication system as claimed in claim 1, wherein the increased sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process.
8. A processing tool, comprising:
an RF signal generator configured to generate an RF signal;
at least one electrode configured to receive the RF signal to execute a first semiconductor manufacturing process and a second semiconductor manufacturing process; and
a first RF sensor and a second RF sensor arranged separately from the electrode and the RF signal generator to wirelessly detect intensity of the RF signal, wherein the detected intensity of the RF signal is utilized for extracting statistical characteristics with a sampling rate, and the statistical characteristics are transmitted to a fault detection and classification (FDC) system,
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process,
wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process,
the sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process, and the threshold value of the second semiconductor manufacturing process is less than the threshold value of the first semiconductor manufacturing process and greater than half the threshold value of the first semiconductor manufacturing process.
9. The processing tool as claimed in claim 8, wherein the RF signal generator comprises: a high-frequency (HF) signal source configured to generate an HF signal; a low-frequency (LF) signal source configured to generate an LF signal; and a distributed network arranged between the LF signal source and the HF signal source, and configured to combine and distribute the LF signal and the HF signal to generate the RF signal, wherein the LF signal source is separated from the HF signal source by the distributed network.
10. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source and configured to decrease reflectiveness of the HF signal for generating the RF signal.
11. The processing tool as claimed in claim 9, wherein the first RF sensor is arranged between the distribution network and the electrode, and the second RF sensor is arranged between the distribution network and the HF signal source.
12. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source, and configured to decrease reflectiveness of the HF signal for generating the RF signal; and a tap coupled between the distributed network and the LF signal source LF, and configured to stabilize frequency of the LF signal, wherein the first RF sensor is configured to detect the RF signal transmitted from the distribution network to the electrode, and the second RF sensor is configured to detect the HF signal transmitted through the matching network.
13. The processing tool as claimed in claim 8, wherein when the detected intensity of the RF signal exceeds the threshold value or is within the threshold range, the RF signal is adjusted to meet the threshold value or the threshold range.
14. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected maximum intensity of the RF signal is greater than the threshold value, the RF signal generator is configured to adjust the RF signal.
15. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected intensity of the RF signal falls outside the threshold range, the RF signal generator is configured to adjust the RF signal.
16. The processing tool as claimed in claim 8, wherein each of the first and second RF sensors comprises a metal coil and a coaxial connector which is surrounded by the metal coil, the coaxial connector is configured to connect a coaxial cable, and the coaxial cable is configured to connect the first and second RF sensors and the computation device.
17. An arcing protection method, comprising:
transmitting an RF signal from an RF signal generator to at least one electrode of a processing tool;
detecting an intensity of the RF signal;
extracting statistical characteristics with a sampling rate based on the detected intensity of the RF signal; and
when the detected intensity of the RF signal in a first semiconductor manufacturing process being greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate is increased and the threshold value is decreased in the second semiconductor manufacturing process;
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process.
18. The arcing protection method as claimed in claim 17, wherein the extracted statistical characteristics comprise a detected maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the detected intensity of the RF signal.
19. The arcing protection method as claimed in claim 17, further comprising:
determining whether the detected maximum intensity of the RF signal is greater than the threshold value, or determining whether range of the detected intensity of the RF signal falls outside the threshold range;
adjusting the RF signal when the detected maximum intensity of the RF signal is greater than the threshold value or the range of the detected intensity of the RF signal falls outside the threshold range.
20. The arcing protection method as claimed in claim 17,
wherein the first semiconductor manufacturing process is switched to the second semiconductor manufacturing process by the processing tool during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing process.
A fabrication system, comprising:
a processing tool, comprising:
at least one electrode configured to receive a radio frequency (RF) signal from a RF signal generator during a first semiconductor manufacturing process and a second semiconductor manufacturing process; and
a RF sensor configured to wirelessly detect an intensity of the RF signal;
a computation device connected to the RF sensor, and configured to extract statistical characteristics with a sampling rate based on the detected intensity of the RF signal; and
a fault detection and classification (FDC) system communicatively connected to the processing tool and the computation device, wherein the FDC system comprises a processor, and the processor is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or a threshold range according to the extracted statistical characteristics,
wherein when the detected intensity of the RF signal exceeds the threshold value or the threshold range, the processor notifies the processing tool to adjust the RF signal or stop tool to check parts damage,
wherein when a detected intensity of the RF signal in the first semiconductor manufacturing process is greater than a detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process.
2. The fabrication system as claimed in claim 1, wherein the extracted statistical characteristics comprise a maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the intensity of the RF signal.
3. The fabrication system as claimed in claim 1, wherein the RF sensor comprises an RF current sensor which generates an inducting current corresponding to the intensity of the RF signal through electro-magnetic induction.
4. The fabrication system as claimed in claim 1, wherein the first semiconductor process and the second semiconductor process are etching processes, and the RF signal is transitioned during a transition period between the first and second semiconductor manufacturing process, and no semiconductor manufacturing process is performed during the transition period.
5. The fabrication system as claimed in claim 4, wherein the processing tool is configured to switch from the first semiconductor manufacturing process to the second semiconductor manufacturing process during the transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing processes.
6. The fabrication system as claimed in claim 1, wherein when the sampling rate is increased, the threshold value is decreased.
7. The fabrication system as claimed in claim 1, wherein the increased sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process.
8. A processing tool, comprising:
an RF signal generator configured to generate an RF signal;
at least one electrode configured to receive the RF signal to execute a first semiconductor manufacturing process during a first period and a second semiconductor manufacturing process during a second period, wherein the second period is shorter than the first period; and
a first RF sensor and a second RF sensor arranged separately from the electrode and the RF signal generator to wirelessly detect an intensity of the RF signal, wherein the detected intensity of the RF signal is utilized for extracting statistical characteristics by a computation device with a sampling rate, and the statistical characteristics are transmitted to a fault detection and classification (FDC) system, wherein the FDC system is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or is outside a threshold range according to the extracted statistical characteristics,
wherein the first semiconductor process and the second semiconductor process are the same type of process,
wherein when a detected intensity of the RF signal during the first period is greater than a detected intensity of the RF signal during the second period and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value during the first period,
the sampling rate of the second period is twice the sampling rate of the first period,
and the threshold value of the second period is less than the threshold value of the first period and greater than half the threshold value of the first period.
9. The processing tool as claimed in claim 8, wherein the RF signal generator comprises: a high-frequency (HF) signal source configured to generate an HF signal; a low-frequency (LF) signal source configured to generate an LF signal; and a distributed network arranged between the LF signal source and the HF signal source, and configured to combine and distribute the LF signal and the HF signal to generate the RF signal, wherein the LF signal source is separated from the HF signal source by the distributed network.
10. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source and configured to decrease reflectiveness of the HF signal for generating the RF signal.
11. The processing tool as claimed in claim 9, wherein the first RF sensor is arranged between the distribution network and the electrode, and the second RF sensor is arranged between the distribution network and the HF signal source.
12. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source, and configured to decrease reflectiveness of the HF signal for generating the RF signal; and a tap coupled between the distributed network and the LF signal source LF, and configured to stabilize frequency of the LF signal, wherein the first RF sensor is configured to detect the RF signal transmitted from the distribution network to the electrode, and the second RF sensor is configured to detect the HF signal transmitted through the matching network.
13. The processing tool as claimed in claim 8, wherein when the detected intensity of the RF signal exceeds the threshold value or is within the threshold range, the RF signal is adjusted to meet the threshold value or the threshold range.
14. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected maximum intensity of the RF signal is greater than the threshold value, the RF signal generator is configured to adjust the RF signal.
15. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected intensity of the RF signal falls outside the threshold range, the RF signal generator is configured to adjust the RF signal.
16. The processing tool as claimed in claim 8, wherein each of the first and second RF sensors comprises a metal coil and a coaxial connector which is surrounded by the metal coil, the coaxial connector is configured to connect a coaxial cable, and the coaxial cable is configured to connect the first and second RF sensors and the computation device.
17. An arcing protection method, comprising:
generating an RF signal, by an RF signal generator during a first semiconductor manufacturing process and a second semiconductor manufacturing process;
detecting an intensity of the RF signal from the RF signal generator to at least one electrode of a processing tool;
extracting statistical characteristics with a sampling rate based on the detected intensity of the RF signal;
determining whether or not the detected intensity of the RF signal exceeds a threshold value or threshold range according to the extracted statistical characteristics; and
adjusting the RF signal when the intensity of the RF signal exceeds the threshold value or the threshold range, wherein the first semiconductor process and the second semiconductor process are etching processes,
wherein in response to a detected intensity of the RF signal in the first semiconductor manufacturing process being greater than a detected intensity of the RF signal in the second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate is increased and the threshold value is decreased in the second semiconductor manufacturing process.
18. The arcing protection method as claimed in claim 17, wherein the extracted statistical characteristics comprise a detected maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the detected intensity of the RF signal.
19. The arcing protection method as claimed in claim 17, wherein determining whether or not the detected intensity of the RF signal exceeds the threshold value or threshold range comprises: determining whether the detected maximum intensity of the RF signal is greater than the threshold value; or determining whether range of the detected intensity of the RF signal falls outside the threshold range.
See claim 17 above
20. The arcing protection method as claimed in claim 17, wherein when the sampling rate is increased, the threshold value is decreased,
wherein the first semiconductor manufacturing process is switched to the second semiconductor manufacturing process by the processing tool during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing process.
Claim 1-7 and 17-20 are rejected on the ground of nonstatutory obviousness type double patenting as being unpatentable over claims 1-20 of U.S. Patent No. 12057301 in view of Valcore et al (US 20170084432).
Although the claims at issue are not identical, they are not patentably distinct from each other because the patent Application claims are narrower than this instant application and teaches all of the limitations of the claims but the patent, for claims 1 and 17, does not explicitly teach “wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process”.
However, Valcore teaches a plasma system and a method for controlling a plasma chamber comprising performing a first and a second semiconductor manufacturing process during a period of time respectively, wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process (see Fig. 6B and [0144] “…when the substrate 119 is to be etched at a rate higher than a rate at which the substrate 119 is to be etched during the state S0, the operations 108, 124, and 126 or the operations 108, 124, and 129 are performed during the state S1 to facilitate etching of the substrate 119 at the higher rate…”; also, see [0149]).
Therefore, it would have been obvious to one of ordinary skilled in the art before effective filing date of the claimed invention to which said subject matter pertains to have modified The patent 12057031 to include performing a first and a second semiconductor manufacturing process during a period of time respectively, wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process as taught by Valcore in order to process a substrate using the first and second process being the same type using different variables (see Fig. 6B and [0144] “…when the substrate 119 is to be etched at a rate higher than a rate at which the substrate 119 is to be etched during the state S0, the operations 108, 124, and 126 or the operations 108, 124, and 129 are performed during the state S1 to facilitate etching of the substrate 119 at the higher rate…”; also, see [0149]) because these processes such as etching require adjustments to the variables when processing a substrate.
Claims 8-16 are rejected on the ground of nonstatutory obviousness type double patenting as being unpatentable over claims 8-16 of U.S. Patent Copending application No. 12057031. Although the claims at issue are not identical, they are not patentably distinct from each other because the patent Application is narrower than the instant application. The patent application claims 8-16 include all of the limitations of the instant Application claims 8-16. It has been held in court that the generic patented invention has been anticipated by the species. See In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993).
Instant Application 18/765,661
Parent patent Application 11,664,206
A fabrication system, comprising:
a processing tool, comprising:
a RF sensor configured to wirelessly detect intensity of a RF signal;
a computation device configured to extract statistical characteristics with a sampling rate; and
a fault detection and classification (FDC) system,
wherein when the detected intensity of the RF signal exceeds a threshold value or a threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage,
wherein when the detected intensity of the RF signal in a first semiconductor manufacturing process is greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process;
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process.
2. The fabrication system as claimed in claim 1, wherein the extracted statistical characteristics comprise a maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the intensity of the RF signal.
3. The fabrication system as claimed in claim 1, wherein the RF sensor comprises an RF current sensor which generates an inducting current corresponding to the intensity of the RF signal through electro-magnetic induction.
4. The fabrication system as claimed in claim 1, wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are etching processes (see claim 1 above, in patent), and
the RF signal is transitioned during a transition period between the first and second semiconductor manufacturing process, and no semiconductor manufacturing process is performed during the transition period.
5. The fabrication system as claimed in claim 4, wherein the processing tool is configured to switch from the first semiconductor manufacturing process to the second semiconductor manufacturing process during the transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing processes.
6. The fabrication system as claimed in claim 1, wherein when the sampling rate is increased, the threshold value is decreased.
7. The fabrication system as claimed in claim 1, wherein the increased sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process.
8. A processing tool, comprising:
an RF signal generator configured to generate an RF signal;
at least one electrode configured to receive the RF signal to execute a first semiconductor manufacturing process and a second semiconductor manufacturing process; and
a first RF sensor and a second RF sensor arranged separately from the electrode and the RF signal generator to wirelessly detect intensity of the RF signal, wherein the detected intensity of the RF signal is utilized for extracting statistical characteristics with a sampling rate, and the statistical characteristics are transmitted to a fault detection and classification (FDC) system,
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process,
wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process,
the sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process, and the threshold value of the second semiconductor manufacturing process is less than the threshold value of the first semiconductor manufacturing process and greater than half the threshold value of the first semiconductor manufacturing process.
9. The processing tool as claimed in claim 8, wherein the RF signal generator comprises:
a high-frequency (HF) signal source configured to generate an HF signal;
a low-frequency (LF) signal source configured to generate an LF signal; and
a distributed network arranged between the LF signal source and the HF signal source, and configured to combine and distribute the LF signal and the HF signal to generate the RF signal, wherein the LF signal source is separated from the HF signal source by the distributed network .
10. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source and configured to decrease reflectiveness of the HF signal for generating the RF signal.
11. The processing tool as claimed in claim 9, wherein the first RF sensor is arranged between the distribution network and the electrode, and the second RF sensor is arranged between the distribution network and the HF signal source.
12. The processing tool as claimed in claim 9, wherein the RF signal generator further comprises: a matching network coupled between the distributed network and the HF signal source, and configured to decrease reflectiveness of the HF signal for generating the RF signal; and a tap coupled between the distributed network and the LF signal source LF, and configured to stabilize frequency of the LF signal, wherein the first RF sensor is configured to detect the RF signal transmitted from the distribution network to the electrode, and the second RF sensor is configured to detect the HF signal transmitted through the matching network.
13. The processing tool as claimed in claim 8, wherein when the detected intensity of the RF signal exceeds the threshold value or is within the threshold range, the RF signal is adjusted to meet the threshold value or the threshold range.
14. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected maximum intensity of the RF signal is greater than the threshold value, the RF signal generator is configured to adjust the RF signal.
15. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected intensity of the RF signal falls outside the threshold range, the RF signal generator is configured to adjust the RF signal.
16. The processing tool as claimed in claim 8, wherein each of the first and second RF sensors comprises a metal coil and a coaxial connector which is surrounded by the metal coil, the coaxial connector is configured to connect a coaxial cable, and the coaxial cable is configured to connect the first and second RF sensors and the computation device.
17. An arcing protection method, comprising:
transmitting an RF signal from an RF signal generator to at least one electrode of a processing tool;
detecting an intensity of the RF signal;
extracting statistical characteristics with a sampling rate based on the detected intensity of the RF signal; and
wherein the first semiconductor manufacturing process and the second semiconductor manufacturing process are the same type of process.
when the detected intensity of the RF signal in a first semiconductor manufacturing process being greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate is increased and the threshold value is decreased in the second semiconductor manufacturing process;
18. The arcing protection method as claimed in claim 17, wherein the extracted statistical characteristics comprise a detected maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the detected intensity of the RF signal.
19. The arcing protection method as claimed in claim 17, further comprising:
determining whether the detected maximum intensity of the RF signal is greater than the threshold value, or determining whether range of the detected intensity of the RF signal falls outside the threshold range (see claim 16);
adjusting the RF signal when the detected maximum intensity of the RF signal is greater than the threshold value or the range of the detected intensity of the RF signal falls outside the threshold range.
20. The arcing protection method as claimed in claim 17, wherein the first semiconductor manufacturing process is switched to the second semiconductor manufacturing process by the processing tool during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing process.
A fabrication system, comprising:
a processing tool, comprising: at least one electrode, configured to receive a radio frequency (RF) signal from an RF signal generator during a first semiconductor manufacturing process and a second semiconductor manufacturing process; and
a RF sensor, configured to wirelessly detect intensity of the RF signal and comprising a circuit board, a coaxial connector arranged at a central portion of the circuit board and a metal coil arranged on the circuit board, wherein the coaxial connector is surrounded by the metal coil on the circuit board, and the metal coil is connected to the coaxial connector;
a computation device, connected to the RF sensor through the coaxial connector and a coaxial cable, and configured to extract statistical characteristics with a sampling rate based on the detected intensity of the RF signal; and
a fault detection and classification (FDC) system, communicatively connected to the processing tool and the computation device, wherein the FDC system comprises a processor, the processor is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or a threshold range according to the extracted statistical characteristics,
wherein when the detected intensity of the RF signal exceeds the threshold value or the threshold range, the processor notifies the processing tool to adjust the RF signal or stop tool to check parts damage,
wherein when the sampling rate is increased, the threshold value is decreased,
wherein the processing tool is configured to switch from the first semiconductor manufacturing process to the second semiconductor manufacturing process during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing processes,
wherein the first semiconductor process and the second semiconductor process are etching processes,
wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process.
(repeated from above “wherein the first semiconductor process and the second semiconductor process are etching processes”)
2. The fabrication system as claimed in claim 1, wherein the extracted statistical characteristics comprise a maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the intensity of the RF signal.
3. The fabrication system as claimed in claim 1, wherein the RF sensor comprises an RF current sensor which generates an inducting current corresponding to the intensity of the RF signal through electro-magnetic induction.
5. The processing tool as claimed in claim 1,
(repeated from claim 1 above “wherein the first semiconductor process and the second semiconductor process are etching processes”)
wherein the RF signal is transitioned during a transition period between the first and second semiconductor manufacturing process, and no semiconductor manufacturing process is performed during the transition period.
See claim 1 above “wherein the processing tool is configured to switch from the first semiconductor manufacturing process to the second semiconductor manufacturing process during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing processes,
See claim 1 above, “the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process.
7. The fabrication system as claimed in claim 1, wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process.
8. A processing tool, comprising:
an RF signal generator, configured to generate an RF signal, wherein the RF signal generator comprises: a high-frequency (HF) signal source, configured to generate an HF signal; a low-frequency (LF) signal source, configured to generate an LF signal; and a distributed network, arranged between the LF signal source and the HF signal source, configured to combine and distribute the LF signal and the HF signal to generate the RF signal, wherein the LF signal source is separated from the HF signal source by the distributed network;
at least one electrode, configured to receive the RF signal to execute a first semiconductor manufacturing process during a first period and a second semiconductor manufacturing process during a second period, wherein the second period is shorter than the first period; and
a first RF sensor and a second RF sensor, arranged separately from the electrode and the RF signal generator to wirelessly detect intensity of the RF signal, wherein the detected intensity of the RF signal is utilized for extracting statistical characteristics by a computation device with a sampling rate, and the statistical characteristics are transmitted to a fault detection and classification (FDC) system, wherein the first RF sensor is arranged between the distribution network and the electrode, and the second RF sensor is arranged between the distribution network and the HF signal source, wherein the FDC system is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or is outside a threshold range according to the extracted statistical characteristics,
wherein the first semiconductor process and the second semiconductor process are etching processes,
wherein when the detected intensity of the RF signal during the first period is greater than the detected intensity of the RF signal during the second period and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value during the first period,
the sampling rate of the second period is twice the sampling rate of the first period, and
the threshold value of the second period is less than the threshold value of the first period and greater than half the threshold value of the first period.
See claim 8 above
9. The processing tool as claimed in claim 8, wherein the RF signal generator further comprises: a matching network, coupled between the distributed network and the HF signal source and configured to decrease reflectiveness of the HF signal for generating the RF signal.
See claim above;
10. The processing tool as claimed in claim 8, wherein the RF signal generator further comprises: a matching network, coupled between the distributed network and the HF signal source, and configured to decrease reflectiveness of the HF signal for generating the RF signal; and a tap, coupled between the distributed network and the LF signal source LF, and configured to stabilize frequency of the LF signal, wherein the first RF sensor is configured to detect the RF signal transmitted from the distribution network to the electrode, and the second RF sensor is configured to detect the HF signal transmitted through the matching network.
11. The processing tool as claimed in claim 8, wherein when the detected intensity of the RF signal exceeds the threshold value or is within the threshold range, the RF signal will be adjusted to meet the threshold value or the threshold range.
12. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected maximum intensity of the RF signal is greater than the threshold value, the RF signal generator is configured to adjust the RF signal.
13. The processing tool as claimed in claim 8, wherein when the FDC system determines that the detected intensity of the RF signal falls outside the threshold range, the RF signal generator is configured to adjust the RF signal.
14. The processing tool as claimed in claim 8, wherein each of the first and second RF sensors comprises a metal coil and a coaxial connector which is surrounded by the metal coil, the coaxial connector is configured to connect a coaxial cable, and the coaxial cable is configured to connect the first and second RF sensors and the computation device.
16. An arcing protection method, comprising:
using a distribution network to combine and distribute a low-frequency (LF) signal from a LF signal source and a high-frequency (HF) signal from a HF signal source to generate an RF signal during a first semiconductor manufacturing process and a second semiconductor manufacturing process, wherein the LF signal source is separated from the HF signal source by the distributed network;
detecting an intensity of the RF signal from the distribution network to at least one electrode of a processing tool wirelessly by a first RF sensor, wherein the first RF sensor is apart from the distribution network and the processing tool;
detecting an intensity of the HF signal from the HF signal source to the distribution network wirelessly by a second RF sensor, wherein the second RF sensor is apart from the distribution network and the processing tool;
extracting statistical characteristics with a sampling rate based on the detected intensity of the RF and HF signals signal;
determining whether or not the detected intensity of the RF signal exceeds a threshold value or threshold range according to the extracted statistical characteristics; and
adjusting the RF signal when the intensity of the RF signal exceeds the threshold value or the threshold range, wherein when the sampling rate is increased, the threshold value is decreased, wherein the first semiconductor manufacturing process is switched to the second semiconductor manufacturing process by the processing tool during a transition period, and the detected intensity of the RF signal in the transition period is greater than the detected intensity of the RF signal in the first and second semiconductor manufacturing process,
wherein the first semiconductor process and the second semiconductor process are etching processes,
wherein in response to the detected intensity of the RF signal in the first semiconductor manufacturing process being greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate is increased and the threshold value is decreased in the second semiconductor manufacturing process.
17. The arcing protection method as claimed in claim 16, wherein the extracted statistical characteristics comprise a detected maximum intensity of the RF signal, a range of the intensity of the RF signal, and a standard deviation of the detected intensity of the RF signal.
18. The arcing protection method as claimed in claim 17, wherein determining whether or not the detected intensity of the RF signal exceeds the threshold value or threshold range comprises: determining whether the detected maximum intensity of the RF signal is greater than the threshold value.
See claim 16
See claim 16 above
Claims 1-20 are rejected on the ground of non-statutory obviousness type double patenting as being unpatentable over claims 1-3, 5, 8-14, and 16-18 of U.S. Patent No. 11,664,206.
Although the claims at issue are not identical, they are not patentably distinct from each other because the patent Application is narrower (species) than the instant application (genus). The patent application claims 1-3, 5, 8-14, and 16-18 include all of the limitations of the instant Application claims 1-20. It has been held in court that the generic patented invention has been anticipated by the species. See In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993).
Claim Objections
Claims 1, 8, and 17 are objected to because of the following informalities:
Claim 1 recites: “a fault detection and classification (FDC) system, wherein when the detected intensity of the RF signal exceeds a threshold value or a threshold range…wherein when the detected intensity of the RF signal in a first semiconductor manufacturing process is greater than the detected intensity of the RF signal in a second semiconductor manufacturing process… the FDC system determines that the measured intensity of the RF signal…”
There is insufficient antecedent basis for the highlighted terms in the claim.
These limitations seems to be:
“a fault detection and classification (FDC) system, wherein when a detected intensity of the RF signal exceeds a threshold value or a threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage,
wherein when a detected intensity of the RF signal in a first semiconductor manufacturing process is greater than a detected intensity of the RF signal in a second semiconductor manufacturing process and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process”.
Claim 8, recites “…wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing…”. There is insufficient antecedent basis for the highlighted terms in the claim.
These limitations seems to be:
Claim 8, recites “wherein when a detected intensity of the RF signal in the first semiconductor manufacturing process is greater than a detected intensity of the RF signal in the second semiconductor manufacturing”.
Claim 17 recites “…when the detected intensity of the RF signal in a first semiconductor manufacturing process being greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process,…” There is insufficient antecedent basis for the highlighted terms in the claim.
These limitations seems to be:
Claim 17 recites “…when a detected intensity of the RF signal in a first semiconductor manufacturing process being greater than a detected intensity of the RF signal in a second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, …”
Relevant Art Cited by Examiner
The following prior art made of record (Cited in IDs) and not relied upon is cited to stablish the level of skill the in the applicant's art and those arts considered reasonably pertinent to Applicant's disclosure. See MPEP 707.05(c). No prior art rejection has bene given to the claims.
The references cited:
Valcore JR et al. (US 20150069912), which was the closest prior art of record teaches A fabrication system, comprising:
a processing tool (see Fig. 1 processing tool 130; also, [0021]), comprising:
at least one electrode configured to receive an radio frequency (RF) signal from a RF signal generator during a first semiconductor manufacturing process and a second semiconductor manufacturing process (see Fig. 1 electrode 136 and/or see Fig. 2 electrostatic chuck 152 that includes an electrode as well, see [0024], [0073], [0094], and [0097] and [0201]); and
a RF sensor configured to detect intensity of the RF signal (see [0055] and see [0107]);
a computation device connected to the RF sensor, and configured to extract statistical characteristics with a sampling rate based on the detected intensity of the RF signal (see Fig 1A host system with a processor/computing device, see [0031], [0049], [0056], [0064], [0110], and [0119]);
and a fault detection and classification (FDC) system (see [0028] and [0086]) communicatively connected to the processing tool and the computation device (Valcore, Figs 1A-1B and [0198] and [0199-0200]),
wherein the FDC system comprises a processor, and the processor is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or a threshold range according to the extracted statistical characteristics (see Valcore, FIG. 1A-1B and [115]), wherein when the detected intensity of the RF signal exceeds the threshold value or the threshold range, the processor notifies the processing tool to adjust the RF signal or stop tool to check parts damage (see FIG. 1 and [0087]),
While Valcore clearly and explicitly teaches sensors to detect RF signal parameters for the purpose of detecting arcing, Valcore does not explicitly teach:
the sensor wirelessly detecting an intensity of the RF signal and comprising a circuit board (however, this wireless detecting parameters and sensor are very well known in this art. They are widely known as induction sensor, magnetic field sensors, eddy current sensor, hall sensors, B-dot sensors, and so on), also, Valcore does not explicitly teach wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process. Valcore does not explicitly teach the allowable subject matter described below in claims 1, 8 and 17.
Chen et al. (US 20120074951) teaches a system for detecting arcing in a plasma using a RF sensor wirelessly detecting an intensity of a RF signal (See Fig. 2, and RF sensor 202).
Haiqing et al (CN 102981028 as taught by provided the machine translation) teaches a RF sensor comprising a metal coil and a coaxial connector which is surrounded by the metal coil, the coaxial connector is configured to connect a coaxial cable, and the coaxial cable is configured to connect the first and second RF sensors and the computation device (see Figs, 2, 4-5 and accompanying text in the disclosure).
Yasar et al (US 20030034244) a fabrication system comprising a threshold value which is decreased during a semiconductor process, and switching from a first process to a second manufacturing process (see 002, 0041, 0044 and Figs. 4-5).
Bode (US 7558687) teaches a RF sensor wherein the sampling rate of this sensor is dynamically adjusted or increased to detect faults based on traced data being above outside a range or threshold.
Ye et al (US 10663491) teaches a system wherein RF signal intensity is measured and adjusted when does not meet a threshold or range.
Long et al (US 20170040176) teaches a plasma chamber device comprising changing RF power from one level to a second level during etching.
Marakhtanov et al (US 20160172216) teaches a plasma device controlled during etching and deposition, wherein during etching the RF power is greater than during the second process such as deposition. Marakhtanov is silent about controlling and measuring the RF signal during the processes.
Anwar et al (US 7514936) teaches a system for detecting arcing comprising defining arc detection thresholds values as a function of RF power setpoint signal in order to detect arcing events and take remedial actions.
Newly found reference Park et al (US 20100245084) teaches a system for controlling a RF plasma chamber wherein a RF threshold value is decreased in a second semiconductor manufacturing process (see Figs. 2-4 and see 0079 and see Fig. 5).
However, these references alone or in combination neither anticipates, nor renders obvious the recited combination as a whole in combination with the other claimed elements including the limitations of a:
Claim 1, A fabrication system, comprising:
“…wherein when the detected intensity of the RF signal in a first semiconductor manufacturing process is greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the FDC system determines that the measured intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the computation device is increased and the threshold value of the FDC system is decreased in the second semiconductor manufacturing process…”.
Claim 8, A processing tool, comprising:
“…wherein when the detected intensity of the RF signal in the first semiconductor manufacturing process is greater than the detected intensity of the RF signal in the second semiconductor manufacturing process and the FDC system determines that the detected intensity of the RF signal does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate of the second semiconductor manufacturing process is twice the sampling rate of the first semiconductor manufacturing process, and the threshold value of the second semiconductor manufacturing process is less than the threshold value of the first semiconductor manufacturing process and greater than half the threshold value of the first semiconductor manufacturing process…”.
Claim 17, An arcing protection method, comprising:
“…when the detected intensity of the RF signal in a first semiconductor manufacturing process being greater than the detected intensity of the RF signal in a second semiconductor manufacturing process and the intensity of the RF signal that does not exceed the threshold value in the first semiconductor manufacturing process, the sampling rate is increased and the threshold value is decreased in the second semiconductor manufacturing process…”.
The claims could/would be allowed if a Terminal disclaimer is submitted and the claim objections are overcome.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to OLVIN LOPEZ ALVAREZ whose telephone number is (571) 270-7686 and fax (571) 270-8686. The examiner can normally be reached Monday thru Friday from 9:00 A.M. to 6:00 P.M.
If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Robert Fennema, can be reached at (571) 272-2748. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of an application may be obtained from Patent Center. Status information for published applications may be obtained from Patent Center. Status information for unpublished applications is available through Patent Center for au/DARRIN D DUNN/ thorized users only. Should you have questions about access to Patent Center, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free).
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) Form at https://www.uspto.gov/patents/uspto-automated- interview-request-air-form.
/O. L./
Examiner, Art Unit 2117
/DARRIN D DUNN/Patent Examiner, Art Unit 2117
Prosecution Insights