DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Continued Examination Under 37 CFR 1.114
A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 03/22/2026 has been entered.
Priority
Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55.
Response to Arguments
Claim(s) 5, 14, 16 was/were withdrawn.
Claim(s) 2, 6-10 is/are amended.
Applicant’s arguments regarding amendments with respect to the pending claims have been considered but are moot because the arguments based on the amendments do not apply to the current rejection. The amendments in the claims are rejected by Kataigi in addition to previously relied on references below.
Claim Interpretation
The following is a quotation of 35 U.S.C. 112(f):
(f) Element in Claim for a Combination. – An element in a claim for a combination may be expressed as a means or step for performing a specified function without the recital of structure, material, or acts in support thereof, and such claim shall be construed to cover the corresponding structure, material, or acts described in the specification and equivalents thereof.
The following is a quotation of pre-AIA 35 U.S.C. 112, sixth paragraph:
An element in a claim for a combination may be expressed as a means or step for performing a specified function without the recital of structure, material, or acts in support thereof, and such claim shall be construed to cover the corresponding structure, material, or acts described in the specification and equivalents thereof.
The claims in this application are given their broadest reasonable interpretation using the plain meaning of the claim language in light of the specification as it would be understood by one of ordinary skill in the art. The broadest reasonable interpretation of a claim element (also commonly referred to as a claim limitation) is limited by the description in the specification when 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, is invoked.
As explained in MPEP § 2181, subsection I, claim limitations that meet the following three-prong test will be interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph:
(A) the claim limitation uses the term “means” or “step” or a term used as a substitute for “means” that is a generic placeholder (also called a nonce term or a non-structural term having no specific structural meaning) for performing the claimed function;
(B) the term “means” or “step” or the generic placeholder is modified by functional language, typically, but not always linked by the transition word “for” (e.g., “means for”) or another linking word or phrase, such as “configured to” or “so that”; and
(C) the term “means” or “step” or the generic placeholder is not modified by sufficient structure, material, or acts for performing the claimed function.
Use of the word “means” (or “step”) in a claim with functional language creates a rebuttable presumption that the claim limitation is to be treated in accordance with 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph. The presumption that the claim limitation is interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, is rebutted when the claim limitation recites sufficient structure, material, or acts to entirely perform the recited function.
Absence of the word “means” (or “step”) in a claim creates a rebuttable presumption that the claim limitation is not to be treated in accordance with 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph. The presumption that the claim limitation is not interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, is rebutted when the claim limitation recites function without reciting sufficient structure, material or acts to entirely perform the recited function.
Claim limitations in this application that use the word “means” (or “step”) are being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, except as otherwise indicated in an Office action. Conversely, claim limitations in this application that do not use the word “means” (or “step”) are not being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, except as otherwise indicated in an Office action.
This application includes one or more claim limitations that do not use the word “means,” but are nonetheless being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, because the claim limitation(s) uses a generic placeholder that is coupled with functional language without reciting sufficient structure to perform the recited function and the generic placeholder is not preceded by a structural modifier. Such claim limitation(s) is/are:
Gas flow channel structure (guide flow channel structure, second uniform space, para. [0038]) in claims 1-20.
Position limiting ring structure (ring body para. [0050], sleeve structure, para. [0036]) in claims 1-20.
Guide flow channel structure (guide flow channel, gas through-hole, para. [0042]) in claim 2.
First uniform flow channel structure (first curved flow channel, para. [0047]) in claims 8-9.
Second uniform flow channel structure (second curved flow channel, para. [0049]) in claims 10-12.
Because this/these claim limitation(s) is/are being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, it/they is/are being interpreted to cover the corresponding structure described in the specification as performing the claimed function, and equivalents thereof.
If applicant does not intend to have this/these limitation(s) interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph, applicant may: (1) amend the claim limitation(s) to avoid it/them being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph (e.g., by reciting sufficient structure to perform the claimed function); or (2) present a sufficient showing that the claim limitation(s) recite(s) sufficient structure to perform the claimed function so as to avoid it/them being interpreted under 35 U.S.C. 112(f) or pre-AIA 35 U.S.C. 112, sixth paragraph.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claim(s) 1, 3, 4, 7, 13, 15, 17 is/are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by US 6159299 to Koai.
Claim 1: Koai discloses a carrier device applied to semiconductor processing equipment arranged in a processing chamber (100 [chamber], Fig. 1) of the semiconductor processing equipment (10 [system]) and comprising: a base (150T/280, Fig. 2c) including a connection flow channel (285 [small holes]), a top surface of the base (151 [wafer support surface]) being configured to carry a wafer (190 [wafer]); a carrier element (150B/150M) stacked with the base (150T/280) and located under the base (150T/280), a gas flow structure (182/156/184) being formed between the carrier element (150B/150M) and the base (150T/280, c. 7, l. 1-11);
and a position-limiting ring structure (200 [edge ring assembly]) sleeved at an outer circumference of the base (150T/280) and configured to limit a position of the wafer (190), a gas blow channel (182) and a first uniform flow space (space above 280P1 [inside perimeter]) being formed between an inner circumferential wall of the position-limiting ring structure (inner wall of 200) and an outer circumferential wall of the base (outer wall of 150T/280), the first uniform flow space (space above 280P1) communicating with the gas blow channel (182); wherein: the gas flow structure (182/156/184) communicates with the first uniform flow space (space above 280P1) via the connection flow channel (285) and is configured to transfer a purge gas to the first uniform flow space via the connection flow channel (285, Fig. 2C); the first uniform flow space (space above 280P1) is considered capable to be configured to flow-equalize the purge gas passing by (Fig. 2C); and the gas blow channel (182) is configured to blow the flow-equalized purge gas to purge a bottom surface and a side surface of the wafer (Fig. 2C).
Regarding “flow-equalize the purge gas” the apparatus of Koai is capable of performing as necessary; additionally, the courts have held that a claim containing a “recitation with respect to the manner in which a claimed apparatus is intended to be employed does not differentiate the claimed apparatus from a prior art apparatus” if the prior art apparatus teaches all the structural limitations of the claim. MPEP 2114 II.
Claim 3: Koai discloses wherein: a volume of the second uniform flow space (volume of 155, Fig. 2c, Koai) is greater than a volume of the first uniform flow space (volume of space above 280P1, see Fig. 2c); or a gas introduction cross-section of the connection flow channel is smaller than gas introduction cross-sections of the first uniform flow space and the second uniform flow space.
Claim 4: Koai discloses wherein the connection flow channel (285, Fig. 2c, Koai) includes: a plurality of flow-limiting holes (holes of 285) passing through the base (150T/280) and arranged uniformly along a circumferential direction of the base (Fig. 2A), two ends of each flow-limiting hole (top and bottom of holes of 285) communicating with the first uniform flow space (285) and the second uniform flow space (155), respectively.
Claim 5: (Withdrawn).
Claim 7: Koai discloses wherein: an annular groove (annular groove of 155, Fig. ) and a plurality of straight grooves (straight grooves of 156) are formed on one of a surface of the carrier element facing the base and a surface of the base facing the carrier element (Fig. 2c), the other one of the surface carrier element facing the base and the surface of the base facing the carrier element cooperating with the annular groove to form the second uniform flow space (155) and cooperate with each straight groove (straight grooves of 156) to form at least one of the guide flow channels (156); or annular grooves and a plurality of straight grooves are formed on both the surface of the carrier element facing the base and the surface of the base facing the carrier element, the annular groove of the carrier element and the annular groove of the base cooperate to form the second uniform flow space, and the plurality of straight grooves of the carrier device cooperate with the plurality of straight grooves of the base to form the guide flow channels.
Claim 13: Koai discloses wherein: the position-limiting ring structure (200, Fig. 2c, Koai) includes a ring body (200); a cover ring (250 [horizontal portion of 240) protruding toward an outer circumferential wall of the base (150T/280) is formed at an inner circumferential wall of the ring body (inner wall of 200); and a gap (182) between the inner circumferential wall of the cover ring (inner wall of 250) and the outer circumferential wall of the base (outer wall of 150T/280) forms the gas blow channel (182).
Claims 14, 16: (Withdrawn).
Claim 15: Koai discloses wherein: the base (150T/280, Fig. 2c, Koai) includes a base body (150T/280); a support ring (interpreted as portion of 280) protruding toward an inner circumferential wall of the ring body (200) is arranged at the outer circumferential wall of the base body (outer wall of 150T/280); an overlap ring (230/220) protruding toward the base body (200) is arranged at the inner circumferential wall of the ring body (inner wall of 200) and below the cover ring (below 250); and the overlap ring (230/220) is stacked on the support ring (interpreted as portion of 280), and a gap (space above 280P1) between the overlap ring (230/220) and the outer circumferential wall of the base body (outer wall of 150T/280) forms the first uniform flow space (space above 280P1).
Claim 17: Koai discloses wherein: a protruded flow-limiting ring (another portion of 280, Fig. 2c, Koai) is formed at the outer referential wall of the base body (outer wall of 150T/280) and located between the support ring (interpreted as portion of 280) and the cover ring (250); a gap (space between another portion of 280 and 250) between the flow-limiting ring (another portion of 280) and the cover ring (250) forms a flow-limiting channel (space between another portion of 280 and 250) configured to communicate the gas blow channel (182) with the first uniform flow space (space above 280P1).
Claim(s) 20 is/are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by US 6159299 to Koai.
Claim 20: Koai discloses Semiconductor processing equipment comprising: a processing chamber (100 [chamber], Fig. 1); and a carrier device arranged in the processing chamber (100) and comprising: a base (150T/280, Fig. 2c) including a connection flow channel (285 [small holes]), a top surface of the base (151 [wafer support surface]) being configured to carry a wafer (190 [wafer]); a carrier element (150B/150M) stacked with the base (150T/280) and located under the base (150T/280), a gas flow structure (182/156/184) being formed between the carrier element (150B/150M) and the base (150T/280, c. 7, l. 1-11);
and a position-limiting ring structure (200 [edge ring assembly]) sleeved at an outer circumference of the base (150T/280) and configured to limit a position of the wafer (190), a gas blow channel (182) and a first uniform flow space (space above 280P1 [inside perimeter]) being formed between an inner circumferential wall of the position-limiting ring structure (inner wall of 200) and an outer circumferential wall of the base (outer wall of 150T/280), the first uniform flow space (space above 280P1) communicating with the gas blow channel (182); wherein: the gas flow structure (182/156/184) communicates with the first uniform flow space (space above 280P1) via the connection flow channel (285) and is configured to transfer a purge gas to the first uniform flow space via the connection flow channel (285, Fig. 2C); the first uniform flow space (space above 280P1) is configured to flow-equalize the purge gas passing by (Fig. 2C); and the gas blow channel (182) is configured to blow the flow-equalized purge gas to purge a bottom surface and a side surface of the wafer (Fig. 2C).
Regarding “flow-equalize the purge gas” the apparatus of Koai is capable of performing as necessary; additionally, the courts have held that a claim containing a “recitation with respect to the manner in which a claimed apparatus is intended to be employed does not differentiate the claimed apparatus from a prior art apparatus” if the prior art apparatus teaches all the structural limitations of the claim. MPEP 2114 II.
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
Claim(s) 2, 6 is/are rejected under 35 U.S.C. 103 as being unpatentable over Koai as applied to claims 1, 3, 4, 7, 13, 15, 17 above, and further in view of US 20090235866 to Kataigi.
Claims 2, 6: Koai does not disclose (claim 2) wherein the gas flow channel structure includes: a guide flow channel structure; and a second uniform flow space communicating with the guide flow channel structure and communicating with the first uniform flow space via the connection flow channel; wherein: the guide flow channel structure includes a plurality of guide flow channels formed between the carrier element and the base, each of the plurality of guide flow channels having an inlet end and an outlet end, and lengths of the plurality of guide flow channels between respective inlet ends and outlet ends being substantially equal;
(claim 6) wherein the guide flow channel structure is configured to transfer the purge gas to the second uniform flow space; and the second uniform flow space is configured to flow-equalize the purge gas flowing by; the guide flow channel structure includes: at least a gas through-hole passing through the carrier element, the gas through-hole being arranged at or close to a center position of the base, each gas through-hole communicating with an inlet end of at least one of the guide flow channels and being configured to communicate with a purge gas source, outlet ends of the guide flow channels being arranged uniformly along a circumferential direction of the second uniform flow space at intervals and communicate with the second uniform flow space.
However Kataigi discloses (claim 2) wherein the gas flow channel structure (31’s/30, Fig. 3-4) includes: a guide flow channel structure (31’s [branched grooves]); and a second uniform flow space (30 [annular groove]) communicating with the guide flow channel structure (31’s) and communicating with the first uniform flow space (20 [purge groove]) via the connection flow channel (24 [purge holes]); wherein: the guide flow channel structure (31’s) includes a plurality of guide flow channels (31’s) formed between the carrier element (14 [second base]) and the base (12 [first base]), each of the plurality of guide flow channels (31’s) having an inlet end (inlet end of 31) and an outlet end (outlet end of 31), and lengths of the plurality of guide flow channels (31’s) between respective inlet ends and outlet ends being substantially equal (Fig. 3);
(claim 6) wherein the guide flow channel structure (31’s, Fig. 3-4) is configured to transfer the purge gas to the second uniform flow space (30, para. [0060]); and the second uniform flow space (30) is configured to flow-equalize the purge gas flowing by (para. [0061-0065]); the guide flow channel structure (31’s) includes: at least a gas through-hole (32 [penetration hole]) passing through the carrier element (14, para. [0063]), the gas through-hole (32) being arranged at or close to a center position of the base (12, Fig. 3), each gas through-hole (32) communicating with an inlet end of at least one of the guide flow channels (inlet end of 31’s) and being configured to communicate with a purge gas source (para. [0060], “purge source”), outlet ends of the guide flow channels (outlet ends of 31’s) being arranged uniformly along a circumferential direction of the second uniform flow space (30) at intervals and communicate with the second uniform flow space (30). Kataigi discloses this for the purpose of suppressing corrosion at an outer periphery of a substrate mounting surface of a plate (para. [0014]).
It would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to incorporate the limitations above as taught by Kataigi with motivation to suppress corrosion at an outer periphery of a substrate mounting surface of a plate.
Claim(s) 8-12 is/are rejected under 35 U.S.C. 103 as being unpatentable over Koai as applied to claims 1, 3, 4, 7, 13, 15, 17 above, and further in view of US 20140252710 to Cuvalci.
Claims 8-9: The apparatus of Koai discloses further comprising: a support shaft (164 [shaft], Fig. 1-2a, Koai) located under the carrier element (150B/150M) and configured to support the carrier element (150B/150M).
However the apparatus of Koai does not disclose (claim 8) a first uniform flow channel structure being formed on a surface of the support shaft facing the support element, and the inlet ends of the first uniform flow channel structure communicating with the inlet ends of the gas through-holes and communicating with the purge gas source; (claim 9) wherein the first uniform flow channel structure includes: at least one first curved flow channel extending along a circumferential direction of the support shaft and corresponding to two gas through-holes, inlet ends of the two gas through-holes communicating with two ends of the first curved flow channel, and an inlet opening communicating with the purge gas source being arranged at the center position of the first curved flow channel.
Cuvalci discloses (claim 8) a first uniform flow channel structure (418/421 [circular edge purge channels], Fig. 4C) being formed on a surface (408 [top surface] of the support shaft (120/400 [shaft]), Fig. 4A, 4C) facing the carrier element (102 [first plate]), and the inlet ends of the first uniform flow channel structure (inlet ends of 118 [vertical holes]) communicating with the inlet ends of the gas through-holes (end of 118) and communicating with the purge gas source (source at end of 420 [purge line], para. [0054-0062]); (claim 9) wherein the first uniform flow channel structure (418/421) includes: at least one first curved flow channel (418/421) extending along a circumferential direction of the support shaft (400/120) and corresponding to two gas through-holes (118), inlet ends of the two gas through-holes (inlet ends of 118) communicating with two ends of the first curved flow channel (418/421), and an inlet opening (422 [first end] of 420) communicating with the purge gas source (source at end of 420) being arranged at the center position of the first curved flow channel (center of 418/421). Cuvalci discloses the above limitations for the purpose of beneficially increasing process uniformity and repeatability (para. [0061]). It is also noted that Cuvalci also teaches that the curved flow channel(s) can have other arrangements and shapes as necessary and not limited to Fig. 4C (para. [0059], [0062]).
It would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to incorporate the optimization of curved channel and arrangement as taught by Cuvalci with motivation to beneficially increase process uniformity and repeatability.
Claims 10-12: The apparatus of Koai in view of Cuvalci does not disclose (claim 10) wherein: the base also includes a plurality of first absorption holes passing through the base arranged uniformly along a circumferential direction of the base; the carrier element also includes a plurality of second absorption holes passing through the carrier element, a number of the second absorption holes being same as a number of the first absorption holes, and the plurality of second absorption holes being in a one-to-one correspondence with the plurality of first absorption holes; a second uniform flow channel structure is further formed on a surface of the support shaft facing the carrier element, and communicates correspondingly with inlet ends of the second absorption holes and a vacuum absorption device;
(claim 11) wherein: the second uniform flow channel structure includes at least one second curved flow channel extending along a circumferential direction of the support shaft; each second curved flow channel corresponds to two second absorption holes; inlet ends of two second absorption holes communicate with two ends of the second curved flow channel, respectively; and an inlet opening communicating with the vacuum absorption device is formed at a center position of the second curved flow channel;
(claim 12) wherein: two second curved flow channels are provided and are symmetrically distributed about an axis of the support shaft; the second uniform flow channel structure also includes a third curved flow channel extending along a circumferential direction of the support shaft; two ends of the third curved flow channel communicate with two second curved flow channels at center positions of the two second curved flow channels, respectively; and the third curved flow channel communicates with the vacuum absorption device at a center position of the third curved flow channel.
Cuvalci discloses (claim 10) wherein: the base (102, Fig. 2/2A) also includes a plurality of first absorption holes (110a [vacuum passages]) passing through the base (102) arranged uniformly along a circumferential direction of the base (102, Fig. 2); the carrier element (bottom half of 102) also includes a plurality of second absorption holes (110a) passing through the carrier element, a number of the second absorption holes (110a) being same as a number of the first absorption holes (110a), and the plurality of second absorption (110a) holes being in a one-to-one correspondence with the plurality of first absorption holes (110a); a second uniform flow channel structure (412, Fig. 4C) is further formed on a surface of the support shaft facing the carrier element (408 of 120/400), and communicates correspondingly with inlet ends of the second absorption holes (inlet ends of 110a) and a vacuum absorption device (vacuum source at end of 414 [vacuum line], para. [0057]);
(claim 11) wherein: the second uniform flow channel structure (412, Fig. 4C) includes at least one second curved flow channel (412) extending along a circumferential direction of the support shaft (400/120, Fig. 4C); each second curved flow channel (412) corresponds to two second absorption holes (at least 2 110a’s are shown in Fig. 2/2A); inlet ends of two second absorption holes (at least 2 110a’s) communicate with two ends of the second curved flow channel (412, para. [0062]), respectively; and an inlet opening (416 [first end of 414]) communicating with the vacuum absorption device (vacuum source at end of 414) is formed at a center position of the second curved flow channel (412, Fig. 4C);
(claim 12) wherein: two second curved flow channels (2 412’s) are provided and are symmetrically distributed about an axis of the support shaft (400/120); the second uniform flow channel structure (412) also includes a third curved flow channel 413 [vacuum leader channel]) extending along a circumferential direction of the support shaft (400/120, Fig. 4C, para. [0058]); and the third curved flow channel (413) communicates with the vacuum absorption device (vacuum source at end of 414) at a center position of the third curved flow channel (413, para. [0057]).
Cuvalci discloses the above limitations regarding the vacuum lines for the purpose of achieving desirable vacuum characteristics (para. [0038]).
However Cuvalci does not disclose two ends of the third curved flow channel communicate with two second curved flow channels at center positions of the two second curved flow channels, respectively.
Yet Cuvalci discloses that the vacuum lines are not limited to one arrangement and shape or symmetry (para. [0062-0065]) for the purpose of improved uniformity in vacuum formation (para. [0041]) and/or achieving desirable vacuum characteristics (para. [0038]).
It would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to incorporate the limitations above and optimization of arrangement of the vacuum channels as taught by Cuvalci with motivation to achieving desirable vacuum characteristics.
Claim(s) 18-19 is/are rejected under 35 U.S.C. 103 as being unpatentable over Koai as applied to claims 1, 3, 4, 7, 13, 15, 17 above, and further in view of US 20060207509 to Tomita.
Claim 18: The apparatus of Koai does not disclose wherein: a gas introduction cross-section of the position-limiting channel is smaller than a gas introduction cross-section of the gas blow channel; the gas introduction cross-section of the gas blow channel is smaller than the gas introduction cross-section of the first uniform flow space; and the gas introduction cross-section of the connection flow channel is greater than the gas introduction cross-section of the flow-limiting channel.
However Tomita teaches that different heights, and widths, gas providing cross-sections and reservoir portions can be incorporated to the space between the base (11a) and the ring body (20 [gas providing member], Fig. 4, 5, para. [0044]) for the purpose of reducing the turbulence of the gas flow which passes through the gas providing passage (25) to the substrate (2 [substrate], para. [0029]).
It would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to incorporate the optimization of spacing and cross-section requirements as taught by Tomita with motivation to reduce the turbulence of the gas flow which passes through the gas providing passage to the substrate.
Claim 19: The apparatus of Koai does not disclose wherein the base, the carrier element, and the position-limiting ring structure are made of aluminum nitride ceramic.
Tomita discloses wherein a base (11a [upper portion], Fig. 2), a carrier element (plate of 11d [through hole]), and a position-limiting ring structure (21 [body portion]) are made of aluminum nitride ceramic (para. [0028], [0038]), for the purpose of enhancing heating performance of the substrate mounting surface (para. [0038]) and/or providing excellent heat resistance (para. [0028]).
It would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to substitute or incorporate the material requirements for the above structures as taught by Tomita with motivation to enhance heating performance of the substrate mounting surface and/or provide excellent heat resistance.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Charlee J. C. Bennett whose telephone number is (571)270-7972. The examiner can normally be reached M-Th 10am-6pm.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Gordon Baldwin can be reached at 5712725166. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/Charlee J. C. Bennett/Primary Examiner, Art Unit 1718
Prosecution Insights